Abstract:The unique properties of graphene offer immense opportunities for applications to many scientific fields, as well as societal needs, beyond our present imagination. One of the important features of graphene is the relatively simple tunability of its electronic structure, an asset which extends the usability of graphene even further beyond present experience. A direct injection of charge carriers into the conduction or valence bands, i.e., doping, represents a viable way of shifting the Fermi level. In particular, the electrochemical doping should be the method of choice, when higher doping levels are desired and when a firm control of experimental conditions is needed. In this Account, we focus on the electrochemistry of graphene in combination with in-situ Raman spectroscopy, i.e., the in-situ Raman spectroelectrochemistry. Such a combination of methods is indeed very powerful, since Raman spectroscopy can readily monitor not only the changes in the doping level, but it can give information also on eventual stress or disorder in the material. However, when employing Raman spectroscopy, one of its main strengths lies in the utilization of isotope engineering during the chemical vapor deposition (CVD) growth of the graphene samples. The in-situ Raman spectroelectrochemical study of multi-layered systems with smartly designed isotope compositions in individual layers can provide a plethora of knowledge about the mutual interactions: (i) between the graphene layers themselves, (ii) between graphene layers and their directly adjacent environment (e.g., substrate or electrolyte), and (iii) between graphene layers and their extended environment, which is separated from the layer by a certain number of additional graphene layers.

Charge distribution in turbostratic few-layer graphene studied by carbon isotope labeling

Understanding asymmetric transfer characteristics and hysteresis behaviors in graphene devices under different chemical atmospheres

Linear Tuning of Charge Carriers in Graphene by Organic Molecules and Charge-Transfer Complexes

Localized state and charge transfer in nitrogen-doped graphene

Stacking-Dependent Spatial Charge Separation in Graphitic Carbonic Nitride layers

On the Electrostatics of Bernal-Stacked Few-Layer Graphene on Surface-Passivated Semiconductors

Possible charge ordering and anomalous transport in graphene/graphene quantum dot heterostructure

Simultaneous Measurement of In-Plane and Interfacial Thermal Conductivity of Isotopically Labeled Bilayer Graphene

Possible charge ordering and anomalous transport in graphene/graphene quantum dotheterostructure

Efficient Charge Transfer in Graphene/CrOCl Heterostructures by van der Waals Interfacial Coupling

Probing Layer Number and Stacking Order of Few-Layer Graphene by Raman Spectroscopy.

Electron-Hole Symmetry Breaking in Charge Transport in Nitrogen-Doped Graphene

Gate-Tunable Resonance State and Screening Effects for Proton-Like Atomic Charge in Graphene.

Electronic Cooling Via Interlayer Coulomb Coupling in Multilayer Epitaxial Graphene

Origin of Spatial Charge Inhomogeneity in Graphene

Band structure engineering of epitaxial graphene on SiC by molecular doping

Charge confinement and Klein tunneling from doping graphene

Raman spectroscopy and In-situ Raman spectroelectrochemistry of isotopically engineered graphene systems

Probing the Anisotropic Fermi Surface in Tetralayer Graphene via Transverse Magnetic Focusing

Charge transfer at carbon nanotube-graphene van der Waals heterojunctions.

Towards Optimized Charge Transport in Multilayer Reduced Graphene Oxides