Giant Positive Magnetoresistance in Half-Metallic Double-Perovskite Sr2CrWO6 Thin Films

Ji Zhang,Wei-Jing Ji,Jie Xu,Xiao-Yu Geng,Jian Zhou,Zheng-Bin Gu,Shu- Hua Yao,Shan-Tao Zhang

DOI: https://doi.org/10.1126/sciadv.1701473

IF: 13.6

2017-01-01

Science Advances

Abstract:Ferrimagnetic half-metallic Sr 2 CrWO 6 thin films show giant positive magnetoresistance up to 17,200%.

What problem does this paper attempt to address?

Giant linear magnetoresistance in half-metallic Sr2CrMoO6 thin films

Zhao-Cai Wang,Lei Chen,Shuang-Shuang Li,Jing-Shi Ying,F. Tang,Guan-Yin Gao,Y. Fang,Weiyao Zhao,David Cortie,Xiaolin Wang,Ren-Kui Zheng

DOI: https://doi.org/10.1038/s41535-021-00354-1

IF: 6.856

2021-05-27

npj Quantum Materials

Abstract:Abstract Linear magnetoresistance (LMR) is a special case of a magnetic-field induced resistivity response, which has been reported in highly disordered semiconductor systems and in topological materials. In this work, we observe LMR effect in half-metallic perovskite Sr 2 CrMoO 6 thin films, of which the maximum MR value exceeds +1600% at 2 K and 14 T. It is an unusual behavior in ferrimagnetic double perovskite material like Sr 2 CrMoO 6 , which are known for intrinsic tunneling-type negative magnetoresistance. In the thin films, the high carriers’ density (~10 22 cm −3 ) and ultrahigh mobility (~10 4 cm 2 V −1 s −1 ) provide a low-resistivity (~10 nΩ·cm) platform for spin-polarized current. Our DFT calculations and magnetic measurements further support the half-metal band structure. The LMR effect in Sr 2 CrMoO 6 could possibly originate from transport behavior that is governed by the guiding center motion of cyclotron orbitals, where the magnetic domain structure possibly provides disordered potential. The ultrahigh mobility and LMR in this system could broaden the applications of perovskites, and introduce more research on metallic oxide ferri-/ferro-magnetic materials.

materials science, multidisciplinary,physics, applied, condensed matter,quantum science & technology
The Structures and Positive Magnetoresistance of Metallic Sr2CrWO6 Epitaxial Thin Film

Wei-jing Ji,Jie Xu,Long Jiao,Jin-Feng Wang,Zheng-Bin Gu,Y. B. Chen,Jian Zhou,Shu-Hua Yao,Shan-Tao Zhang

DOI: https://doi.org/10.1016/j.ceramint.2013.05.045

IF: 5.532

2013-01-01

Ceramics International

Abstract:Double perovskite Sr2CrWO6 films have been prepared on SrTiO3 (111) substrates by pulsed laser deposition in high vacuum (10−5Pa). X-ray diffraction patterns indicate that the films are (111)-oriented. Both atomic force microscopy (AFM) and cross-section transmission electron microscopy (TEM) images prove that the films have very smooth surfaces. Detailed microstructures given by high resolution transmission electron microscopy (HRTEM) further confirm that the films are epitaxial with sharp and coherent substrate/film interface. Well saturated magnetization–magnetic field hysteresis loop is observed with the saturation magnetization of 1.2μB/formula unit at 10K. The films show metallic transport behavior and large positive magnetoresistance (∼180% at 10K). The structure–property relationship is discussed in detail.
Electronic Origin of Half-Metal to Semiconductor Transition and Colossal Magnetoresistance in Spinel HgCr2Se4

Aiji Liang,Zhilin Li,Shihao Zhang,Shucui Sun,Shuai Liu,Cheng Chen,Haifeng Yang,Shengtao Cui,Sung-Kwan Mo,Shuai Yang,Yongqing Li,Meixiao Wang,Lexian Yang,Jianpeng Liu,Zhongkai Liu,Yulin Chen

DOI: https://doi.org/10.1103/physrevb.107.195114

IF: 3.7

2023-01-01

Physical Review B

Abstract:Half metals are ferromagnets hosting spin-polarized conducting carriers and are crucial for spintronics applications. The chromium spinel HgCr2Se4 represents a unique type of half-metal, which features a half-metal to semiconductor transition (HMST) and exhibits colossal magnetoresistance (CMR) across the ferromagnetic -paramagnetic (FM-PM) transition. Using angle-resolved photoemission spectroscopy, we find that the Fermi surface of n-type HgCr2Se4 (n-HgCr2Se4) consists of a single electron pocket which moves above the Fermi level (EF) upon the FM-PM transition, leading to the HMST. Such a Lifshitz transition manifests a giant band splitting which originates from the exchange interaction unveiled with a specific chemical nonstoichiometry. The exchange band splitting and the chemical nonstoichiometry are two key ingredients to the HMST and CMR, consistent with our ab initio calculation. Our findings provide spectroscopic evidence of the electronic origin of the anomalous properties of HgCr2Se4, which address the unique phase transition in half-metals.
Giant Positive Magnetoresistance: Bipolar Conduction and Giant Positive Magnetoresistance in Doped Metallic Titanium Oxide Heterostructures (Adv. Mater. Interfaces 9/2021)

Ke Huang,Tao Wang,Mengjia Jin,Liang Wu,Junyao Floria Wang,Shengyao Li,Dong‐Chen Qi,Shuying Cheng,Yangyang Li,Jingsheng Chen,Xiaozhong He,Changjian Li,Stephen J. Pennycook,Xiao Renshaw Wang

DOI: https://doi.org/10.1002/admi.202170046

IF: 5.4

2021-05-01

Advanced Materials Interfaces

Abstract:In article number <a href="https://doi.org/10.1002/admi.202002147">2002147</a>, Xiao Renshaw Wang and co-workers demonstrate that the emergent high-mobility bipolar transport and giant magnetoresistance (GMR) are achieved through treating titanium film by doping with an ultra-small dopant, i.e. deuterium, and subsequently oxidizing the film. The results of this study pave the way for future electronics. 

materials science, multidisciplinary,chemistry
MAGNETIC AND TRANSPORT PROPERTIES IN THE DOUBLE PEROVSKITE Sr2CrWO6

JH Wang,H Zhu,HM Han,G Ni,W Zhong,YW Du

DOI: https://doi.org/10.7498/aps.50.540

2001-01-01

Abstract:We have carried out preliminary investigations about the magnetic and transport properties of the double perovskite Sr2CrWO6. The polycrystalline sample was fabricated using solid-state reactions in an Ar atmosphere and evacuated silica capsules. The X-ray diffraction studies show that the sample is composed of Sr2CrWO6 and a small amount of impurity SrWO4. The Curie temperature, determined by the thermal magnetization measurements, is around 480 K. The electric resistivity increases with the drop of temperature and exhibits insulator behavior. A large intergrain magnetoresistance (MR) up to 20% at a low temperature (25 K) and a field of 5 T is observed. And the MR decreases to zero with increasing temperature toward 300 K. The large coercive force (5.97×104 A/m) and the low-field deviation of MR from high-field linear behavior indicate that there probably exists a large magnetic anisotropy in the compound.
Bipolar Conduction and Giant Positive Magnetoresistance in Doped Metallic Titanium Oxide Heterostructures

Ke Huang,Tao Wang,Mengjia Jin,Liang Wu,Junyao Floria Wang,Shengyao Li,Dong‐Chen Qi,Shuying Cheng,Yangyang Li,Jingsheng Chen,Xiaozhong He,Changjian Li,Stephen J. Pennycook,Xiao Renshaw Wang

DOI: https://doi.org/10.1002/admi.202002147

IF: 5.4

2021-02-03

Advanced Materials Interfaces

Abstract:Empowering conventional materials with unexpected magnetoelectric properties is appealing to the multi‐functionalization of existing devices and the exploration of future electronics. Recently, owing to its unique effect in modulating a matter's properties, ultra‐small dopants, for example, H, D, and Li, attract enormous attention in creating emergent functionalities, such as superconductivity, and metal–insulator transition. Here, an observation of bipolar conduction accompanied by a giant positive magnetoresistance in D‐doped metallic Ti oxide (TiOxDy) films is reported. To overcome the challenges in intercalating the D into a crystalline oxide, a series of TiOxDy is formed by sequentially doping Ti with D and surface/interface oxidation. Intriguingly, while the electron mobility of the TiOxDy increases by an order of magnitude larger after doping, the emergent holes also exhibit high mobility. Moreover, the bipolar conduction induces a giant magnetoresistance up to 900% at 6 T, which is ≈6 times higher than its conventional phase. This study paves a way to empower conventional materials in existing electronics and induce novel electronic phases.

materials science, multidisciplinary,chemistry
Giant Positive Magnetoresistance in Co@CoO Nanoparticle Arrays

Hui Xing,Wenjie Kong,Chaehyun Kim,Sheng Peng,Shouheng Sun,Zhu-An Xu,Hao Zeng

DOI: https://doi.org/10.1063/1.3099594

IF: 2.877

2009-01-01

Journal of Applied Physics

Abstract:We report the magnetotransport properties of self-assembled Co@CoO nanoparticle arrays at temperatures below 100 K. Resistance shows thermally activated behavior that can be fitted by the general expression of R exp{(T/T0)^v}. Efros-Shklovskii variable range hopping (v=1/2) and simple activation (hard gap, v=1) dominate the high and low temperature region, respectively, with a strongly temperature-dependent transition regime in between. A giant positive magnetoresistance of >1,400% is observed at 10K, which decreases with increasing temperature. The positive MR and most of its features can be explained by the Zeeman splitting of the localized states that suppresses the spin dependent hopping paths in the presence of on-site Coulomb repulsion.
Transport Properties of High-Performance All-Heusler Co2CrSi/Cu2CrAl/Co2CrSi Giant Magnetoresistance Device

Z. Q. Bai,Y. H. Lu,L. Shen,V. Ko,G. C. Han,Y. P. Feng

DOI: https://doi.org/10.1063/1.4712301

IF: 2.877

2012-01-01

Journal of Applied Physics

Abstract:Transport properties of giant magnetoresistance (MR) junction consisting of trilayer Co2CrSi/Cu2CrAl/Co2CrSi Heusler alloys (L21) are studied using first-principles approach based on density functional theory and the non-equilibrium Green's function method. Highly conductive channels are found in almost the entire k-plane when the magnetizations of the electrodes are parallel, while they are completely blocked in the antiparallel configuration, which leads to a high magnetoresistance ratio (the pessimistic MR ratio is nearly 100%). Furthermore, the calculated I-V curve shows that the device behaves as a good spin valve with a considerable disparity in currents under the parallel and antiparallel magnetic configurations of the electrodes. The Co2CrSi/Cu2CrAl/Co2CrSi junction could be useful for high-performance all-metallic current-perpendicular-to-plane giant magnetoresistance reading head for the next generation high density magnetic storage.
Large Low-Field Positive Magnetoresistance in Nonmagnetic Half-Heusler ScPtBi Single Crystal

Zhipeng Hou,Yue Wang,Enke Liu,Hongwei Zhang,Wenhong Wang,Guangheng Wu

DOI: https://doi.org/10.1063/1.4936179

IF: 4

2015-01-01

Applied Physics Letters

Abstract:High-quality nonmagnetic half-Heusler ScPtBi single crystals were synthesized by a Bi self-flux method. This compound was revealed to be a hole-dominated semimetal with a large low-field magnetoresistance up to 240% at 2 K in a magnetic field of 1 T. Magneto-transport measurements demonstrated that the large low-field magnetoresistance effect resulted from the coexistence of field-induced metal-semiconductor transition and weak-antilocalization effect. Moreover, Hall measurements indicated that ScPtBi single crystal showed a high mobility over a wide temperature region even up to room temperature (4050 cm2V−1s−1 at 2 K–2016 cm2V−1s−1 at 300 K). These findings not only suggest the nonmagnetic ScPtBi semimetal a potential material candidate for applications in high-sensitivity magnetic sensors but also are of great significance to comprehensively understand the rare-earth based half-Heusler compounds.
Crossover from Negative to Positive Magnetoresistance in Sr2CrWO6/Sr2Fe10/9Mo8/9O6 Superlattices.

Ji Zhang,Wei-Jing Ji,Jie Xu,Zheng-Bin Gu,Y. B. Chen,Shan-Tao Zhang

DOI: https://doi.org/10.1088/1361-648x/ab0bf3

2019-01-01

Journal of Physics Condensed Matter

Abstract:Sr2CrWO6/Sr2Fe10/9Mo8/9O6 (SCWO/SFMO) superlattices with 4, 6, 7, 10 periods (abbreviated as S-1, S-2, S-3, and S-4) were prepared on (001) SrTiO3 (STO) substrates by pulsed laser deposition. All superlattices show macroscopic ferromagnetic behavior, and the magnetization increases with increasing period. The S-1 superlattice demonstrates semiconductor-like temperature-dependent resistivity in the whole measuring temperature range and negative magnetoresistance of -5.3% at 2K with 2 T magnetic field, while the other superlattices illustrate metallic behaviors and increasing positive magnetoresistance of 223.1%, 275.4%, and 766.1% under the same conditions. This work not only provides a feasible way to tune the MR effect in magnetic perovskite oxides, but also may stimulate further work on artificially micro-structured thin films with designable magnetic properties.
Giant Magnetoresistance in Transition-Metal-Doped Zno Films

Jing Wang,Zhengbin Gu,Minghui Lu,Di Wu,Changsheng Yuan,Shantao Zhang,Yanfeng Chen,Shining Zhu,Yongyuan Zhu

DOI: https://doi.org/10.1063/1.2210974

IF: 4

2006-01-01

Applied Physics Letters

Abstract:Magnetic and transport properties were investigated in Zn0.94Mn0.03Co0.03O thin films prepared by dual radio frequency magnetron sputtering technique. A negative magnetoresistance (MR=[ρ(H)−ρ(0)]∕ρ(0)) of −95% at 2K and a positive MR of 48% at 10K were established in the films. The anomalous magnetic and magnetic-related transport properties in transition-metal-doped ZnO films are discussed in terms of magnetic polarons.
Anomalous critical behavior and localized ferromagnetism of the half‐metallic double perovskite Sr2CrReO6

Hao Liu,Shuhao Wang,Benwei Yu,Chunlan Ma,J. L. Sánchez Llamazares,Caixia Wang,Yan Zhu,Hao Yang,Jiyu Fan

DOI: https://doi.org/10.1111/jace.19502

IF: 4.186

2023-10-20

Journal of the American Ceramic Society

Abstract:Double perovskites such as Sr2CrReO6 attract great scientific attention owing to their high Curie temperatures (TC ≥ 550 K) as well as large magnetoresistances. However, both the specific physical mechanism of high TC and magnetic ground state in Sr2CrReO6 remain ill‐defined. In order to clarify and understand these issues, we studied its critical phase transition characteristics using critical behavior analysis. We found that the obtained critical exponents (β = 1.115 and γ = 2.224) are quite different from any traditional universality class. The abnormal critical behavior implies that at the quantum critical point, Sr2CrReO6 exists a strong competition among several magnetic interactions. By analyzing their effective critical exponents, we show that the double perovskite Sr2CrReO6 is really an ordered and homogeneous ferromagnet. With the help of Takahashi's theory, the nature of ferromagnetism in Sr2CrReO6 is confirmed to be localized instead of itinerant. The results of this research will provide new insights into the origins of high TC as well as the magnetic ground state in this double perovskite.

materials science, ceramics
Triple Perovskite Sr3CrFeMoO9 Ultrathin Films with Ferromagnetism above Room Temperature

Zheng Li,Long Jiao,Wei-Jing Ji,Jie Xu,Jin-Feng Wang,Zheng-Bin Gu,Jian Zhou,Shu-Hua Yao,Y. B. Chen,Shan-Tao Zhang,Yan-Feng Chen

DOI: https://doi.org/10.1016/j.scriptamat.2013.07.004

IF: 6.302

2013-01-01

Scripta Materialia

Abstract:A novel ferromagnetic triple perovskite Sr3CrFeMoO9 was designed and ultrathin films were fabricated. The films are highly strained, with a sharp film/substrate interface. The valences of the Cr, Fe and Mo cations are +3, +3 and +6, respectively. Well-saturated ferromagnetic hysteresis loops are observed at room temperature and 10 K, and the Curie temperature should be higher than 400 K, as indicated by the temperature-magnetization curve. The films show semiconductor-like behavior with almost negligible magnetoresistance. The possible spin configuration is analyzed based on experimental results. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Spin Hall Magnetoresistance in an Antiferromagnetic Magnetoelectric Cr2o3/Heavy-Metal W Heterostructure

Y. Ji,J. Miao,K. K. Meng,Z. Y. Ren,B. W. Dong,X. G. Xu,Y. Wu,Y. Jiang

DOI: https://doi.org/10.1063/1.4989680

IF: 4

2017-01-01

Applied Physics Letters

Abstract:The spin Hall magnetoresistance (SMR) effect is studied in a magnetoelectric Cr2O3/heavy-metal W heterostructure. The Cr2O3 film is confirmed as the alpha-phase, and its Neel temperature is determined. A clear SMR behavior is observed at the interface of Cr2O3/W. A nearly 0.1% SMR ratio is achieved under a magnetic field of 9 T, which is larger than the reported value in the SrMnO3/Pt structure. A systematic study on the variations of SMR as functions of the magnetic field and its angle is performed. Our results indicate that the antiferromagnetic magnetoelectric Cr2O3/W structure has a promising prospect application in future spintronic devices. Published by AIP Publishing.
GIANT TUNNELING MAGNETORESISTANCE IN NANOSTRUCTURED Znx Fe3-x O4-α-Fe2 O3 POLYCRYSTALLINE MATERIAL

Yw Du,P Chen,Jm Zhu,Dy Xing

DOI: https://doi.org/10.1109/tmag.2002.803164

IF: 0.906

2001-01-01

Acta Physica Sinica

Abstract:Giant tunneling magnetoresistance effect (TMR) as large as 1280% at 4.2K and 158% at 300K was observed in Zn0.41Fe2.59O4-α-Fe2O3 polycrystalline sample. The Zn0.41Fe2.59O4 grains are separated by insulating α-Fe2O3 thin layer boundaries, The pattern of nanostructure has been verified by TEM and HREM and the thickness of α-Fe2O3 boundary is about 6-7nm. The huge TMR is attributed to the high spin-polarization of Zn0.41Fe2.59O4 grains and insulating antiferromagnetic α-Fe2O3 thin layer. The ZnxFe3-xO4 ferrite is a new type half-metallic material with a huge TMR at room temperature is interesting to further study in future.
Large Negative Magnetoresistance Induced by Anionic Solid Solutions in Two-Dimensional Spin-Frustrated Transition Metal Chalcogenides.

Yuqiao Guo,Jun Dai,Jiyin Zhao,Changzheng Wu,Dianqi Li,Lidong Zhang,Wei Ning,Mingliang Tian,Xiao Cheng Zeng,Yi Xie

DOI: https://doi.org/10.1103/physrevlett.113.157202

IF: 8.6

2014-01-01

Physical Review Letters

Abstract:We report an anionic solid solution process that induces frustrated magnetic structures within two-dimensional transition metal chalcogenides, which leads to huge negative magnetoresistance effects. Ultrathin nanosheets of TiTe(2-x)I(x) solid solutions, which are a new class of inorganic two-dimensional magnetic material, exhibit negative magnetoresistance with a value of up to -85%, due to the spin-dependent scattering effects of local Ti(3+) 3d(1) moments that are antiferromagnetically coupled. Moreover, TiTe(2-x)I(x) serials show unique transport behaviors with continuous evolution from metallic to semiconducting states. We anticipate that anionic doping will be a powerful tool for optimizing the intrinsic physical properties of two-dimensional transition metal chalcogenide system.
Magnetism, Charge Order and Giant Magnetoresistance in SrFeO$_{3-δ}$ Single Crystals

A. Lebon,P. Adler,C. Bernhard,A. V. Boris,A. V. Pimenov,A. Maljuk,C. T. Lin,C. Ulrich,B. Keimer

DOI: https://doi.org/10.1103/PhysRevLett.92.037202

2004-01-30

Abstract:The electronic and magnetic properties of SrFeO$_{3-\delta}$ single crystals with controlled oxygen content ($0 \leq \delta \leq 0.19$) have been studied systematically by susceptibility, transport and spectroscopic techniques. An intimate correlation between the spin-charge ordering and the electronic transport behavior is found. Giant negative as well as positive magnetoresistance are observed.

Strongly Correlated Electrons
High magnetoresistance performance of epitaxial half-metallic CrO 2 -based magnetic junctions

Zhenhua Zhang,Ming Cheng,Yong Liu,Dengjing Wang,Ke Wang,Rui Xiong,Zhihong Lu,ZhiQiang Fan

DOI: https://doi.org/10.1039/d2cp05015c

IF: 3.3

2022-12-27

Physical Chemistry Chemical Physics

Abstract:Half-metallic chromium dioxide (CrO 2 ) is an ideal spintronic material due to its near full spin polarization and ultralow Gilbert damping at room temperature. Based on theoretical calculations, we found that the tunneling magnetoresistance (TMR) ratios of CrO 2 /XO 2 /CrO 2 (X= Ti, Sn) magnetic tunnel junctions (MTJ) can reach up to the order of magnitude of 10 5 %, and the magnetoresistance (MR) ratio for CrO 2 /RuO 2 /CrO 2 magnetic junctions (MJ) can reach the order of magnitude of 10 4 %. In addition, we have succeeded to fabricate epitaxial CrO 2 -based MTJs (CrO 2 /TiO 2 /CrO 2 and CrO 2 /TiO 2 /Co 2 FeAl) with variational thickness of TiO 2 tunnel barrier. Evident TMR effects are observed for all CrO 2 -based MTJs with a highest MR ratio of 8.55 % for CrO 2 /TiO 2 /Co 2 FeAl MTJ at 10 K. The MR ratios of CrO 2 -based MTJs in our studies are low than theoretical expectations, which may be due to the possible mixture of interface atoms and Cr magnetization reversal. Moreover, the existence of oxygen vacancy in TiO 2 tunnel barrier can also significantly weaken the TMR effect due to the increased spin scattering, and the annealing treatment in oxygen atmosphere leads to an increase of MR ratio about 33 % for CrO 2 /TiO 2 / Co 2 FeAl MTJ in comparison of the unannealed one, which is consistent with theoretical calculations.

chemistry, physical,physics, atomic, molecular & chemical
Giant Tunneling Magnetoresistance in Polycrystalline Nanostructured Zn/sub X/fe/sub 3-X/o/sub 4/-Α-fe/sub 2/o/sub 3/

Du You Wei,Chen Peng,Ni Gang,Zhu Jian Min

DOI: https://doi.org/10.1109/intmag.2002.1001147

2002-01-01

Abstract:Summary form only given, as follows. Giant tunneling magnetoresistance effect (TMR) as large as 1280% at 4.2 K and 158% at 300 K was observed in Zn/sub 0.41/Fe/sub 2.59/O/sub 4/-/spl alpha/-Fe/sub 2/O/sub 3/ polycrystalline sample. The Zn/sub 0.41/Fe/sub 2.59/O/sub 4/ grains are separated by insulating /spl alpha/-Fe/sub 2/O/sub 3/ thin layer boundaries. The nanostructure pattern has been verified by TEM and HREM and the thickness of /spl alpha/-Fe/sub 2/O/sub 3/ boundary is about 6-7 nm. The huge TMR is attributed to the high spin-polarization of Zn/sub 0/./sub 41/Fe/sub 2.59/O/sub 4/ grains and the insulating antiferromagnetic /spl alpha/-Fe/sub 2/O/sub 3/ thin layer. The conductivity is found to depend exponentially on reciprocal temperature that means the electronic transfer is dominated by thermally activated tunneling from grain to grain. The Zn/sub x/Fe/sub 3-x/O/sub 4/ ferrite is a new type half-metallic material and the huge TMR at room temperature is a new breaking advance.
Room-temperature giant magnetotranstance effect in single-phase multiferroics

Yan-Fen Chang,Young Sun

DOI: https://doi.org/10.48550/arXiv.2008.13410

2020-08-31

Abstract:Single-phase multiferroic materials are usually considered useless because of the weak magnetoelectric effects, low operating temperature, and small electric polarization induced by magnetic orders. As a result, current studies on applications of the magnetoelectric effects are mainly focusing on multiferroic heterostructures and composites. Here we report a room-temperature giant effect in response to external magnetic fields in single-phase multiferroics. A low magnetic field of 1000 Oe applied on the spin-driven multiferroic hexaferrites BaSrCo2Fe11AlO22 and Ba0.9Sr1.1Co2Fe11AlO22 is able to cause a huge change in the linear magnetoelectric coefficient by several orders, leading to a giant magnetotranstance (GMT) effect at room temperature. The GMT effect is comparable to the well-known giant magnetoresistance (GMR) effect in magnetic multilayers, and thus opens up a door toward practical applications for single-phase multiferroics.

Materials Science

Giant Positive Magnetoresistance in Half-Metallic Double-Perovskite Sr2CrWO6 Thin Films

Giant linear magnetoresistance in half-metallic Sr2CrMoO6 thin films

The Structures and Positive Magnetoresistance of Metallic Sr2CrWO6 Epitaxial Thin Film

Electronic Origin of Half-Metal to Semiconductor Transition and Colossal Magnetoresistance in Spinel HgCr2Se4

Giant Positive Magnetoresistance: Bipolar Conduction and Giant Positive Magnetoresistance in Doped Metallic Titanium Oxide Heterostructures (Adv. Mater. Interfaces 9/2021)

MAGNETIC AND TRANSPORT PROPERTIES IN THE DOUBLE PEROVSKITE Sr2CrWO6

Bipolar Conduction and Giant Positive Magnetoresistance in Doped Metallic Titanium Oxide Heterostructures

Giant Positive Magnetoresistance in Co@CoO Nanoparticle Arrays

Transport Properties of High-Performance All-Heusler Co2CrSi/Cu2CrAl/Co2CrSi Giant Magnetoresistance Device

Large Low-Field Positive Magnetoresistance in Nonmagnetic Half-Heusler ScPtBi Single Crystal

Crossover from Negative to Positive Magnetoresistance in Sr2CrWO6/Sr2Fe10/9Mo8/9O6 Superlattices.

Giant Magnetoresistance in Transition-Metal-Doped Zno Films

Anomalous critical behavior and localized ferromagnetism of the half‐metallic double perovskite Sr2CrReO6

Triple Perovskite Sr3CrFeMoO9 Ultrathin Films with Ferromagnetism above Room Temperature

Spin Hall Magnetoresistance in an Antiferromagnetic Magnetoelectric Cr2o3/Heavy-Metal W Heterostructure

GIANT TUNNELING MAGNETORESISTANCE IN NANOSTRUCTURED Znx Fe3-x O4-α-Fe2 O3 POLYCRYSTALLINE MATERIAL

Large Negative Magnetoresistance Induced by Anionic Solid Solutions in Two-Dimensional Spin-Frustrated Transition Metal Chalcogenides.

Magnetism, Charge Order and Giant Magnetoresistance in SrFeO$_{3-δ}$ Single Crystals

High magnetoresistance performance of epitaxial half-metallic CrO 2 -based magnetic junctions

Giant Tunneling Magnetoresistance in Polycrystalline Nanostructured Zn/sub X/fe/sub 3-X/o/sub 4/-Α-fe/sub 2/o/sub 3/

Room-temperature giant magnetotranstance effect in single-phase multiferroics