Large Low-Field Positive Magnetoresistance in Nonmagnetic Half-Heusler ScPtBi Single Crystal

Zhipeng Hou,Yue Wang,Enke Liu,Hongwei Zhang,Wenhong Wang,Guangheng Wu

DOI: https://doi.org/10.1063/1.4936179

IF: 4

2015-01-01

Applied Physics Letters

Abstract:High-quality nonmagnetic half-Heusler ScPtBi single crystals were synthesized by a Bi self-flux method. This compound was revealed to be a hole-dominated semimetal with a large low-field magnetoresistance up to 240% at 2 K in a magnetic field of 1 T. Magneto-transport measurements demonstrated that the large low-field magnetoresistance effect resulted from the coexistence of field-induced metal-semiconductor transition and weak-antilocalization effect. Moreover, Hall measurements indicated that ScPtBi single crystal showed a high mobility over a wide temperature region even up to room temperature (4050 cm2V−1s−1 at 2 K–2016 cm2V−1s−1 at 300 K). These findings not only suggest the nonmagnetic ScPtBi semimetal a potential material candidate for applications in high-sensitivity magnetic sensors but also are of great significance to comprehensively understand the rare-earth based half-Heusler compounds.