Abstract:Semiconductor manufacturing depends on the development of new processes, advanced patterning, and novel materials to create smaller and higher performing devices to follow the industry roadmaps for applications for computing and systems (such as smartphones and servers). For dynamic random access memory (DRAM) applications, the biggest efforts are engaged in scaling and shrinking of the nodes, and these then affect the area density, performance, and cost of the DRAM cells. However, while we are reaching a slowdown in dimension-scaling, more innovation is needed to sustain the high aspect ratios required in the capacitor’s architecture—whether it is moving toward 3D architectures or developing new materials to sustain the challenge of scaling. To accelerate the learning, it is essential to screen novel hard mask (HM) materials in a rapid fashion to speed their development. While EUV (extreme ultraviolet—a wavelength of 13.5 nm) lithography requires 300 mm wafers, electron beam lithography (EBL) generates nanoscale patterns in a maskless manner on smaller substrates (from 300 mm wafers to 10 mm2 coupons) mimicking sub-50 nm EUV features. The primary goal of this work is to create a path for rapid screening of HM materials that are still under early phase development and which are prepared in small chamber tools (coupon chambers) and, therefore, not ready for 300 mm process integration. While the features investigated of 44 nm half pitch seem extremely reasonable for e-beam, the requirements and the approaches used to address the needed patterned area, resolution, speed, and uniformity exceed the standard conditions previously reported in the literature. Each aspect will be evaluated in the context of a “dots on the fly,” or DOTF, patterning technique.

Patterning of Nanodot-Arrays Using EUV Achromatic Talbot Lithography at the Swiss Light Source and Shanghai Synchrotron Radiation Facility

Improving the Resolution and Throughput of Achromatic Talbot Lithography

Multiple-Patterning Nanosphere Lithography for Fabricating Periodic Three-Dimensional Hierarchical Nanostructures.

Resistless EUV lithography: photon-induced oxide patterning on silicon

Fluorescent Labeling to Investigate Nanopatterning Processes in Extreme Ultraviolet Lithography.

Colloidal pattern replication through contact photolithography operated in a "Talbot-Fabry-Perot" regime

Resist Materials for Extreme Ultraviolet Lithography: Toward Low‐Cost Single‐Digit‐Nanometer Patterning

Colloidal Quantum Dot Nanolithography: Direct Patterning via Electron Beam Lithography

Development of 90 NM & 5 NM High Resolution Advanced Lithographic Patterning Materials

Unconventional Lithography for Patterned Nanomaterials

Nanoscale molecular patterns fabricated by using scanning near-field optical lithography.

Rapid prototyping of etch test structures for hard mask development using electron beam lithography

Extreme ultraviolet lithography reaches 5 nm resolution

Grayscale Electron Beam Lithography Direct Patterned Antimony Sulfide

High-NA EUV lithography: current status and outlook for the future

Rigorous Simulations of 3D Patterns on Extreme Ultraviolet Lithography Masks

Nanometer resolution mask lithography with matter waves: Near-field binary holography

Sub-50 nm feature sizes using positive tone molecular glass resists for EUV lithography

Mask innovations on the eve of High NA EUV lithography

Combining thermal scanning probe lithography and dry etching for grayscale nanopattern amplification

Sub-wavelength patterned pulse laser lithography for efficient fabrication of large-area metasurfaces