Abstract:One of the most attractive types of novel nonvolatile memory concepts is resistive random access memory (ReRAM) based on a reversible ("soft") dielectric breakdown effect. The interest is caused by combining simple architecture with promising performance: excellent scalability, nanosecond speed, long data retention, and low power consumption. However, the commercialization of this type of memory is retarded mainly due to serious drawbacks: high cell-to-cell variability of switching parameters and limited endurance related to the ionic origin of resistive switching effect coupled with the problem of voltage overshooting. In particular, these issues complicate the examination of test samples because during the lifespan of memory cells, and the permanent reselection of test switching parameters is required. This challenge can be overcome by developing a measurement technique that combines careful testing of every single structure and the ability to test a large number of test structures. As such a technique, we propose an automated testing algorithm that automatically avoids voltage overshooting and provides an effective way of characterization of cell-to-cell and cycle-to-cycle variability. It includes all stages of ReRAM cell operation, specifically electroforming, dc switching, and endurance testing in the pulsed mode. The developed technique allows on-the-fly restoring of the memory window in case of its degradation, making it possible to better understand the potential of the material stacks of the memory cell.

Constructing Fast and Energy Efficient 1tnr Based ReRAM Crossbar Memory

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Efficient Evaluation Model Including Interconnect Resistance Effect for Large Scale RRAM Crossbar Array Matrix Computing

4.7 A 65nm ReRAM-enabled nonvolatile processor with 6× reduction in restore time and 4× higher clock frequency using adaptive data retention and self-write-termination nonvolatile logic

Automated Testing Algorithm for the Improvement of 1T1R ReRAM Endurance

A Fully Automated Platform for Evaluating ReRAM Crossbars

AERIS: Area/Energy-Efficient lT2R ReRAM Based Processing-in-Memory Neural Network System-on-a-Chip

Memristor Crossbars with 4.5 Terabits-per-Inch-Square Density and Two Nanometer Dimension

Cross-layer Designs against Non-ideal Effects in ReRAM-based Processing-in-Memory System

Optimal Design of FPGA Switch Matrix with Ion Mobility Based Nonvolatile ReRAM

A Non-volatile Computing-in-Memory ReRAM Macro using Two-bit Current-Mode Sensing Amplifier

Comparison of 1T1R and 1C1R ReRAM Arrays

A Novel Page-Forming Scheme with Ultra-Low Bit-Error-Rate and High Reliability on a 1mb RRAM Chip