Abstract:Electrostatically defined nanoscale devices within 2D semiconductor heterostructures, especially van der Waals heterostructures, offer advantages such as uniformity and flexibility. Investigating MoS2/WSe2 heterostructures under split gate and middle gate control unveils unique electronic behavior, highlighting quantum confinement and precise electrostatic control, and advancing the understanding of 2D materials for future electronic devices. The exponential development in quantum phenomena is directly correlated with the decreasing size of nano‐semiconductor transistors. Consequently, the use of a quantum structure that deviates from traditional transistor types becomes imperative. Electrostatically defined nanoscale devices within 2D semiconductor heterostructures serve as foundational elements for diverse quantum electrical circuits. Van der Waals heterostructures, distinguished by atomically flat interfaces and inherent 2D characteristics, offer advantages such as large‐scale uniformity, flexibility, and portability over conventional bulk semiconductor heterostructures. Herein, the intricate electronic behavior of a MoS2/WSe2 encapsulated heterostructure governed by split‐gate and middle‐gate configurations is investigated, revealing a distinctive step‐like current profile at a low temperature of 77 K. The observed four regimes in the current highlight the impact of quantum confinement induced by reduced lateral dimensions, coupled with precise electrostatic confinement controlled by gate voltages. The temperature dependence of the phenomena emphasizes the role of thermal effects on carrier scattering mechanisms. In addition, the pinch‐off characteristics with different temperatures, middle‐gate voltages, and drain biases are explored. This study contributes to a deeper understanding of electrostatic effects in 2D transition metal dichalcogenide heterostructures and holds promise for the development of advanced electronic devices with tailored confinement for enhanced functionalities.

Mapping 1D Confined Electromagnetic Edge States in 2D Monolayer Semiconducting MoS 2 Using 4D-STEM

In-situ Fabrication of Mo 6 S 6 -Nanowire-terminated Edges in Monolayer Molybdenum Disulfide

Imaging the electron charge density in monolayer MoS 2 at the Ångstrom scale

Imaging the electron charge density in monolayer MoS2 at the Ångstrom scale

Edge Reconstruction-Dependent Growth Kinetics of MoS2

Uncovering Edge States and Electrical Inhomogeneity in MoS2 Field-Effect Transistors

Momentum resolved ground/excited states and the ultra-fast excited state dynamics of monolayer MoS2

Conductivity Modulation of a Slit Channel in a Monolayer MoS2 Homostructure

Time-resolved ARPES Determination of a Quasi-Particle Band Gap and Hot Electron Dynamics in Monolayer MoS 2

Edge Nonlinear Optics on A Mos2 Atomic Monolayer

Two-dimensional electronic transport and surface electron accumulation in MoS2

Probing the edge-related properties of atomically thin MoS2 at nanoscale

Anisotropic Etching of Monolayer MoS2 Flakes for Zigzag Edges in Chemical Vapor Deposition.

Atomic scale imaging of the negative charge induced by a single vanadium dopant atom in monolayer WSe$_2$ using 4D-STEM

A field-effect approach to directly profiling the localized states in monolayer MoS 2 .

Dynamic Structural Response and Deformations of Monolayer $MoS_{2}$ Visualized by Femtosecond Electron Diffraction

Exploring Electrostatic Confinement Transport in MoS2/WSe2 Heterostructure via Triple‐Gated Point Contact Device

Mapping domain junctions using 4D-STEM: toward controlled properties of epitaxially grown transition metal dichalcogenide monolayers

Sub-Ångstrom electric field measurements on a universal detector in a scanning transmission electron microscope

TUNING STRUCTURAL AND ELECTRONIC PROPERTIES OF MoS2 NANOTUBES BY TRANSVERSE ELECTRIC FIELD

Imaging Negative Charge around Single Vanadium Dopant Atoms in Monolayer Tungsten Diselenide Using 4D Scanning Transmission Electron Microscopy