Abstract:The Al-(ZnCdNiTiO2)-pSi diodes with a ratio of 4;2;2;2 were fabricated and their charge transport mechanisms (CTMs) were investigated between 80-380K and ±4.5 V using current-voltage (IV) measurements. The saturation-current (Is), quality-factor (n), and barrier - height (BH)/(Φbo) values of the diode were calculated from the forward bias ln(IF)-VF curve as function of temperature. While the value of BH is increased, n value is decreased with increasing temperature. Non-linear behavior was observed in the Arrhenius or Richardson plot (RP) (ln(Io/T2) vs q/kT) at low temperatures (LTs). Also, the Richardson - constant (A*) calculated from the linear part of this plot is quite lesser than its theoretical - value (=32 A.(cm.K)-2) for p-Si), and high values of n at LTs show an evident deviated from thermionic - emission (TE) theory. To explain this case; both the nkT/q vs kT/q, Φbo and n vs q/2kT curves were plotted to determine the other possible-CTMs and they show that both the tunneling and Double Gaussian - distribution (DGD) are more effective than TE. The obtained A* value from the modified RP by using the standard deviation from Φbo-q/2kT plot is closer to its theoretical value. The energy dependent curve of interface states or traps (Nss) was calculated from the IF - VF characteristics by considering the voltage dependence of the BH and n for the studied temperature range and they generally decline with increase in temperature due to rearrangement and structure of electrons at traps under the influence of temperature. All these results show that the fabricated Al-(ZnCdNiTiO2)-pSi diode can be used as a temperature - sensor in low and high temperature applications.

Vertical GaN-Based Temperature Sensor by Using TiN Anode Schottky Barrier Diode

Effect of Anode Material on the Sensitivity of GaN Schottky Barrier Diode Temperature Sensor

Recessed Anode AlGaN/GaN Schottky Barrier Diode for Temperature Sensor Application

Quasi-vertical diamond temperature sensor by using Schottky–pn junction structure diode

On-Chip Integrated High-Sensitivity Temperature Sensor Based on p-GaN/AlGaN/GaN Heterostructure

A 1-V Diode-Based Temperature Sensor with a Resolution FoM of 3.1pj•k2 in 55nm CMOS

An Energy-Efficient Capacitively Biased Diode-Based Temperature Sensor in 55-nm CMOS

A High-Sensitivity Vacuum Diode Temperature Sensor Based on Barrier-Lowering Effect

Forward Current Transport Mechanisms of Ni/Au—InAlN/AlN/GaN Schottky Diodes

Design of High-Performance Temperature Sensor Based on Planar 4H-SiC Junction Barrier Schottky Diode

Frequency and temperature-dependent electrical characteristics of Ni/n-GaP/Al Schottky barrier diodes

Temperature Dependence on Current-Voltage Characteristics of Ni∕Au–Al0.45Ga0.55N Schottky Photodiode

Temperature rise detection in GaN high-electron-mobility transistors via gate-drain Schottky junction forward-conduction voltages

Quaternary functional semiconductor device-based temperature sensors for low and high temperatures (LTs, HTs)

A Method for Fabricating Au/n-Al_(0.3)Ga_(0.7)N Lateral Schottky Diodes

Vertical GaN Schottky Barrier Diode with Hybrid PNiO Junction Termination Extension

Thermal Analysis of THz Schottky Diode Chips with Single and Double-Row Anode Arrangement

The Leakage Current Mechanisms in the Schottky Diode with A Thin Al Layer Insertion Between Al0.245ga0.755n/Gan Heterostructure and Ni/Au Schottky Contact

Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer

Determination of the Leakage Current Transport Mechanisms in Quasi-Vertical GaN–on–Si Schottky Barrier Diodes (sbds) at Low and High Reverse Biases and Varied Temperatures

Temperature Dependence of the Resistance of Algan/Gan Heterostructures and Their Applications As Temperature Sensors