Abstract:In this paper, the modulated laser-induced excess minority carrier density wave (CDW) of bipolar semiconductor is developed. An analytical expression of CDW in frequency domain is introduced. The numerical simulations are carried out to analyze the effects of minority carrier transport parameters (minority carrier lifetime, diffusion coefficient, and two surfaces recombination velocities) on response of laser-induced photocarrier radiometry (PCR) signal to frequency for semiconductor silicon wafer. The PCR amplitude increases with increasing the minority carrier lifetime, and decreased with increasing the carrier diffusion coefficient and surface recombination velocity. In contrast, the PCR phase lag decreases with increasing the minority carrier lifetime, and increases with increasing the carrier diffusion coefficient and surface recombination velocity. The silicon (Si) wafer with an artificial defect (mechanical scratch) on the surface is experimentally investigated by PCR scanning image system. The distribution maps of the minority carrier transport parameters are obtained by best-fitting method which is based on the carrier density wave analytical expression, and the influences of the artificial defect on carrier transport parameters are discussed in detail. The experimental results indicate that the surface recombination velocity and carrier diffusivity at artificial damaged location are dramatically increased compared with those in the healthy region. The carrier bulk lifetime of whole Si wafer is obtained to be about 38.33 μs by PCR scanning image measurements. Simultaneously, quasi steady-state photoconductance (QSSPC) method is used to measure the carrier effective lifetime of Si wafer, and it is about 33.85 μs. Therefore, the carrier bulk lifetime of Si wafer by PCR scanning image measurement is in good agreement with the QSSPC measurement. However, QSSPC measurement could obtain only the carrier effective lifetime of Si wafer. Furthermore, PCR scanning image measurement can be employed to measure the carrier transport parameters with high resolution in comparison with QSSPC measurement, and to evaluate the localized imperfection.

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Photocarrier Radiometry for Noncontact Evaluation of Space Monocrystalline Silicon Solar Cell under Low-Energy Electron Irradiation

Photocarrier radiometry for predicting the degradation of electrical parameters of monocrystalline silicon (c-Si) solar cell irradiated by 100 KeV proton beams

Quantitative Analysis of the Degradation Behavior of Silicon Solar Cell Irradiated by 1 MeV Electron Beams Using Photocarrier Radiometry Combined with Lock-in Carrierography

Photocarrier Radiometry for Non-contact Evaluation of Monocrystalline Silicon Solar Cell under Low-Energy (< 200 Kev) Proton Irradiation

Evaluation of the Performance Degradation of Silicon Solar Cell Irradiated by Low-Level (<1 MeV) Energetic Particles Using Photocarrier Radiometry

Carrier Transport Parameter Imaging in a Multicrystalline Silicon Solar Cell by Laser-Induced Photocarrier Radiometry

Infrared Radiation Dynamic Response and Parametric Analysis for Silicon Solar Cell Using Photocarrier Radiometry

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Infrared Radiation Induced by Photocarrier Recombination in Solar Cells

Frequency Characteristics of Modulated Laser-Induced Infrared Photocarrier Radiometry

Experimental Study on Scan Imaging of Silicon Wafer by Laser-Induced Photocarrier Radiometry

Accurate Electronic Transport Characterization of B+ Ion-Implanted Silicon Wafers with Self-Normalized Nonlinear Photocarrier Radiometry

Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode

Application of Lock-In Photocarrier Radiometry in Solar Cells

Differential Nonlinear Photocarrier Radiometry for Characterizing Ultra-Low Energy Boron Implantation in Silicon

Surface Recombination Property of Silicon Wafers Determined Accurately by Self-Normalized Photocarrier Radiometry

Cross-sectional profile of photocarrier mobility in thin-film solar cells via multimolecular recombination and charge extraction by linearly increasing voltage (cs-p-CELIV)

Determination of Temperature‐ and Carrier‐Dependent Surface Recombination in Silicon

Numerical Simulations of IBC Solar Cells Based on Poly-Si Carrier-Selective Passivating Contacts

Cross-sectional Investigation of Radiation Damage of 2 MeV Proton-Irradiated Silicon Carbide