Abstract:This study of highly accelerated lifetime tests of SrTiO$_3$, a model semiconducting oxide, is motivated by the interest in reliable multilayer ceramic capacitors and resistance-switching thin-film devices. Our analytical solution to oxygen-vacancy migration under a DC voltage -- the cause of resistance degradation in SrTiO$_3$ -- agrees with previous numerical solutions. However, all solutions fail to explain why degradation kinetics feature a very strong voltage dependence, which we attribute to the nucleation and growth of cathode-initiated fast-conducting needles. While they have no color contrast in SrTiO$_3$ single crystals and are nominally invisible, needles presence in DC-degraded samples -- in silicone oil and in air -- was unambiguously revealed by in-situ hot-stage photography. Observations in silicone oil and thermodynamic considerations of voltage boundary conditions further revealed a cooccurrence of copious oxygen bubbling and the onset of final accelerating degradation, suggesting sudden oxygen loss is a precursor of final failure. Remarkably, both undoped and Fe-doped SrTiO$_3$ can emit electroluminescence at higher current densities, thus providing a vivid indicator of resistance degradation and a metal-to-insulator resistance transition during cooling. The implications of these findings to thin ceramic and thin film SrTiO$_3$ devices are discussed, along with connections to similar findings in likewise degraded fast-ion yttria-stabilized zirconia.

Dielectric Breakdown Characteristics of Sol–gel Derived SrTiO3 Films

Electrical Characteristics of SrTiO3/Al2O3 Laminated Film Capacitors

Newly Generated Thick Amorphous Oxide Layer at Electrode/Sol-Gel Film Interface under Strong External Electric Field

Achieving Ultrahigh Breakdown Strength and Energy Storage Performance Through Periodic Interface Modification in SrTiO3 Thin Film

Leakage Current and Dielectric Breakdown in Lanthanum Doped Amorphous Aluminum Oxide Films Prepared by Sol–gel

The Influence of Electrode Contact on the Anodization of Pt/sol–gel Derived SrTiO3 Thin Film/al Capacitor

Dielectric Properties under High Electric Field for Silicon Doped Alumina Thin Film with Glass-Like Structure Derived from Sol-Gel Process

Dielectric property and self-repairing capability of silicon and titanium co-doped amorphous alumina thin films prepared by sol–gel technology

Insights into the breakdown mechanism of anodic oxide film

STUDY OF THE ELECTRICAL PROPERTIES OF SOL-GEL-DERIVED TITANIUM-VANADIUM OXIDE FILMS

Self-Repairing Characteristics in the Solid-State Al2o3 Film Capacitors

Enhancement of Energy Storage Density Achieved in Bi-modified SrTiO3 Thin Films by Introducing a TiO2 Layer

Microstructure And Electrical Properties Of (Ba,Sr)Tio3 Thin Films Prepared By A Sol-Gel Method

Anodic Oxidation in Aluminum Electrode by Using Hydrated Amorphous Aluminum Oxide Film As Solid Electrolyte under High Electric Field

Dielectric and Electrical Properties of La(x)Sr(1-3x/2)Cu(3)Ti(4)o(12) Ceramics

Thickness Dependence of Electrical Properties for High-k SrTa2O6 Thin Films Fabricated by Sol–Gel Method

The effect of annealing temperature on the structure and dielectric properties of (Ba/sub 0.6/Sr/sub 0.4/)TiO/sub 3/ thin films

Characteristics of silicon-based BaxSr1-xTiO3 thin films prepared by a sol-gel method

DC Resistance Degradation of SrTiO$_3$: The Role of Virtual-Cathode Needles and Oxygen Bubbles

Structural and electrical properties of SrFe x Ti 1−x O 3 ( x =0.001, 0.005 and 0.01) thin films prepared by pulsed laser depositions

High Breakdown Field CaCu3Ti4O12 Ceramics: Roles of the Secondary Phase and of Sr Doping