Fabrication and Evaluation of SrTa2O6 Thin Films Using Chemical Solution Deposition Method
Li Lu,Masahiro Echizen,Takashi Nishida,Kiyoshi Uchiyama,Yukiharu Uraoka
2010-01-01
Abstract:SrTa2O6 (STA) thin films were fabricated using two Chemical Solution Deposition methods, the Metal-Organic Decomposition (MOD) method and the Sol-Gel method. Electrical properties of STA thin films were investigated with a metal-insulator-metal structure. Both of the STA thin films deposited by the two methods were crystallized at 800 C. The dielectric constants (ε) of crystalline thin films were much higher than those of amorphous thin films. The ε of about 150 for crystalline STA thin films fabricated by the Sol-Gel method is lower than that by the MOD method, but its leakage current density was improved markedly from 10 to 10 A/cm at 250 kV/cm. The larger leakage current is regarded as the reason of higher ε. Introduction Along with the miniaturization of electronic devices high-k materials are needed to replace conventional SiO2 in a broad range of application areas, such as information storage capacitors for future dynamic random access memories (DRAMs), embedded capacitors, tunable devices and gate oxides for field effect transistors [1, 2]. The research and application of some high-k materials including Al2O3, HfO2, ZrO2 and Ta2O5 have already performed [2-7]. Recently, SrTa2O6 (STA) has attracted much attention because of its high dielectric constant and low leakage current density [2, 8-13]. Several deposition methods have been used to investigate its fundamental electrical properties with a metal-insulator-metal (MIM) structure, such as Metal Organic Chemical Vapor Deposition (MOCVD) [2], Plasma-Enhanced Atomic Layer Deposition [9] and Sputtering [8]. However, reports on using the Chemical Solution Deposition (CSD) method are rare in the literature. The CSD method possesses many advantages in preparing oxide thin films, such as good homogeneity, lower processing temperature, precise control of composition, simplicity and lower equipment cost [14]. However, the fabrication conditions of the CSD method greatly affect the micro-structures [15] and the electrical properties. Therefore, in this study, we investigated the capacitance vs. frequency and leakage current properties of STA thin films by two CSD methods, the Metal-Organic Decomposition (MOD) method and the Sol-Gel method, under various fabrication conditions. Proceedings of 6th Thin Film Materials & Devices Meeting November 2-3, 2009, Kyoto, Japan http://www.tfmd.jp/