Abstract:Dielectric thin film capacitors are expected to be a promising candidate for high-performance energy storage devices due to their high power density, fast charge/discharge speed, and excellent stability. Nevertheless, it remains a challenging endeavor to develop dielectrics with excellent energy storage density comparable to that of commercial batteries. In this work, lead-free 0.8SrTiO3-0.2BiFeO3 (0.8STO-0.2BFO) thin films with coexisting amorphous and nanocrystalline structure were prepared by a sol-gel method. The heat-treatment temperature was adjusted to form polar-nano regions, thereby modulate the breakdown strength and dielectric polarization, and increase the energy storage density. The electric potential, electric field, and current density of the films with different amorphous/crystalline volume fractions were evaluated by the finite element simulation to further verify that the proper crystallization can result in the improved polarization performance and increased breakdown strength of the films, which are beneficial to the enhancement of energy storage performance. Through structural tailoring, the 0.8STO-0.2BFO film annealed at 550 °C demonstrates the optimal energy storage properties with a giant discharge energy storage density of 65 J/cm3 and high efficiency of 75% at room temperature. Simultaneously, a broad temperature stability (20–160 °C), superb operating frequency stability (20 Hz-2 kHz), and excellent fatigue endurance (6.3 ×105) are observed without appreciable degradation of the energy storage performance. The excellent energy storage performance indicates a widespread potential of 0.8STO-0.2BFO films in pulse power applications, such as consumer electronics, microelectronics, and medical devices.

Achieving Ultrahigh Breakdown Strength and Energy Storage Performance Through Periodic Interface Modification in SrTiO3 Thin Film

Substantially improved energy density of SrTiO3 thin film by cyclic cooling–heating and the interfacial blocking effect

Enhancement of Energy Storage Density Achieved in Bi-modified SrTiO3 Thin Films by Introducing a TiO2 Layer

Enhancing Electron Mobility at the LaAlO3/SrTiO3 Interface by Surface Control

Enhancing electron mobility at the LaAlO₃ /SrTiO₃ interface by surface control.

Enhancing the heterointerface stability of Al2O3/Ba0.5Sr0.5TiO3/Al2O3 composite thin films by adaptive anodizing method under high electric field

Newly Generated Thick Amorphous Oxide Layer at Electrode/Sol-Gel Film Interface under Strong External Electric Field

Chemistry and structure of homoepitaxial SrTiO$_3$ films and their influence on oxide-heterostructure interfaces

Enhanced Superconductivity in SrTiO$_3$-based Interfaces via Amorphous Al2O3 Capping

Electrical Characteristics of SrTiO3/Al2O3 Laminated Film Capacitors

Two-Dimensional Electron Gases at LaAlO3/SrTiO3 Nanostructured Heterointerfaces with a Buffering Layer for Oxide-Based Electronics

Dielectric Breakdown Characteristics of Sol–gel Derived SrTiO3 Films

A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

Excellent energy storage performance of Mn-doped SrTiO3-BiFeO3 thin films by microstructure modulation

Misfit Dislocation Core Structures At Ba0.5 Sr0.5TiO3 /LaAlO3 Interfaces

Improving Energy Density of Crystalline–amorphous Multilayer Films Deposited on Ti Foils by Structural Modulation

High energy storage density of Bi3.25La0.75Ti3O12/SrTiO3 multilayer thin films by structural design

Evolution of the SrTiO$_3$ surface electronic state as a function of LaAlO$_3$ overlayer thickness

Significant Enhancement in Breakdown Strength and Energy Density of the BaTiO3/BaTiO3@SiO2 Layered Ceramics with Strong Interface Blocking Effect

Tuning the Carrier Density of LaAlO3/SrTiO3 Interfaces by Capping La1−xSrxMnO3

Locally enhanced conductivity due to the tetragonal domain structure in LaAlO$_{3}$/SrTiO$_{3}$ heterointerfaces