Effect of ZrO 2 Doping on the Microwave Dielectric Properties of Ba(Mg 1/3 Nb 2/3 )O 3 Ceramics

Sen Peng,Gaofeng Luo,Mengqiang Wu,Shengquan Yu,Jianming Xu,Tongcheng Huang,Jianhua Zhou

DOI: https://doi.org/10.1007/s11664-016-5153-6

IF: 2.1

2017-01-01

Journal of Electronic Materials

Abstract:The microwave dielectric properties of Ba(Mg1/3Nb2/3)O3 ceramics with x (x = 0–10) wt.% ZrO2 (BMZN) were investigated by the solid-state reaction technique. X-ray diffraction (XRD) analysis suggested that there were two phases: the main crystalline phase Ba(Mg1/3Nb2/3)O3(BMN) and a secondary phase Ba5Nb4O15. Meanwhile, the Zr ions entered the B site of BMN and disturbed the 1:2 ordering. Scanning electron microscopy (SEM) analysis demonstrated that Zr4+ could promote the grain growth obviously. The addition of Zr4+ had a huge and positive influence on the Q × f value, for example, the sample with x = 8 had the highest Q × f value of 106,410 GHz. The BMZN ceramics with x = 8 sintered at 1400°C for 5 h had excellent microwave dielectric properties: ε r  = 32.9, Q × f = 106,410 GHz (f = 8 GHz) and τf = +0.7 ppm/°C.