Effect of Annealing Atmosphere on the Structural and Optical Properties of ZnO Thin Films on Si (100) Substrates Grown by Atomic Layer Deposition

Ji-Li Tian,Gui-Gen Wang,Hua-Yu Zhang
DOI: https://doi.org/10.4028/www.scientific.net/jnanor.37.92
2015-01-01
Journal of Nano Research
Abstract:ZnO thin films were deposited on Si (100) substrates by atomic layer deposition. Annealing treatments for the as-deposited films were performed in nitrogen, oxygen, argon and air at 800 °C, respectively. The influence of annealing atmosphere on the structural and optical properties of the ALD-ZnO thin films was investigated by XRD, SEM, and PL. Results reveals that the films annealed in oxygen atmosphere exhibited excellent crystallinity (polycrystalline hexagonal wurtzite structure with a strong (002) preferred crystallographic planes), relatively smooth surface and better luminescence performance, which means that O2 is the most suitable annealing atmosphere for obtaining high quality ALD-ZnO thin films.
What problem does this paper attempt to address?