Design of Mid-Infrared Electro-Optic Modulators Based on Aluminum Nitride Waveguides

Liu Shuai,Xu Ke,Song Qinghai,Cheng Zhenzhou,Tsang Hon Ki
DOI: https://doi.org/10.1109/JLT.2016.2587319
IF: 4.7
2016-01-01
Journal of Lightwave Technology
Abstract:We propose and theoretically evaluate the performance of aluminum nitride (AlN) waveguides as mid-infrared (mid-IR) electrooptic (EO) modulators. The device configurations considered include a strip waveguide modulator and a horizontal slot waveguide modulator. The device dimensions were optimized by finite element analysis of the mode field and electric fields in order to calculate the modulation efficiency and the loss. By applying 15 V on the modulator, a maximum effective waveguide index change of over 2 _ 10-5is obtained using the slot waveguide structure. The modulator has a reasonable loss of _2 dB/cm at 2.5 μm wavelength with oxide cladding absorption taken into account. The modulation efficiency of the slot waveguide is found to be twice of the normal strip waveguide. The results also indicate that EO effect in AlN works well over a wide range of wavelengths in mid-IR. © 1983-2012 IEEE.
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