Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Design and fabrication of 3μm silicon-on-insulator waveguide integrated Ge electro-absorption modulator

30GHz Ge electro-absorption modulator integrated with 3 μm silicon-on-insulator waveguide

High-Performance Electro-Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

High speed GeSi electro-absorption modulator at 1550 nm wavelength on SOI waveguide

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

An 80Gb/s Ge Waveguide Electro-Absorption Modulator

The Optical Waveguide Design Of Quantum Well Electroabsorption Optical Modulator

Thermally Tunable GeSi Electro-Absorption Modulator with a Wide Effective Operating Wavelength Range

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

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Design and Optimization of High-Speed Silicon-Based Electro-Optical Modulator in Mid-Infrared Band(invited)

Asymmetric Ge/SiGe coupled quantum well modulators

Silicon-On-Insulator Optical Intensity Modulator Based on Waveguide-Vanishing Effect

Design of Mid-Infrared Nonlinear Silicon–germanium Waveguides for Broadband/discrete-Band Wavelength Conversion

An Electro-Optic Modulator Based on Geo2-Doped Silica Ridge Waveguides with Thermal Poling

Design and Electro-Optical Co-Optimization of High-Speed Travelling Wave Silicon-Organic Hybrid Modulators

High-speed (>40 GHz) Integrated Electroabsorption Modulator Based on Identical Epitaxial Layer Approach

Monolayer WS2 based electro-absorption modulator

Design and Optimization of a Graphene-On-Silicon Nitride Integrated Waveguide Dual-Mode Electro-Absorption Modulator

Design of Mid-Infrared Electro-Optic Modulators Based on Aluminum Nitride Waveguides

Enhanced Performance of ITO-Assisted Electro-Absorption Optical Modulator Using Sidewall Angled Silicon Waveguide