LP-MOCVD Growth and Properties of Zn1－xMgxO Thin Film
刘伟,顾书林,叶建东,朱顺明,秦锋,周昕,刘松民,胡立群,张荣,施毅,郑有炓
DOI: https://doi.org/10.3321/j.issn:0253-4177.2004.07.013
2004-01-01
Abstract:Zn1-xMgxO thin films are epitaxially grown on Al2O3 (0001) substrates using metal organic chemical vapor deposition. It is found that a thin ZnO buffer layer is needed to achieve wurtzite-type Zn1-xMgxO film on sapphire. By increasing the content of Mg in the film, the c-axis constant of film decreases. Furthermore, no significant phase separation is observed by X-ray diffraction measurements, which demonstrates good quality of the film. The abnormal shift of curve in the transmission spectroscopy for Zn1-xMgxO film at room temperature (first red shift, then blue shift) is due to the property of the defects in alloy films. The study indicates that, in the growing of ZnMgO alloy by MOCVD, growth condition should be optimized in order to avoid defects.