MRAMsim: A Simulator for Magnetoresistive RAM

Xin Shi,Fei Wu,Changsheng Xie,Haitao Huang,Ming Zhu
DOI: https://doi.org/10.1109/icdcsw.2016.12
2016-01-01
Abstract:Compute requirements are increasing rapidly in systems ranging from desktops to servers. The conventional memory system greatly impacts the system efficiency and can't be improved anymore because of the fabrication process. Magnetoresistive Random Access Memory (MRAM) provides many benefits, such as non-volatility, low leakage, high-speed operation and unlimited endurance. Because of these attractive features, MRAM is regarded as one of the most promising technologies to incorporate into the memory hierarchy. Since the manufacturing cost of real MRAM device is high, the simulation tool is rather important. In this paper, We design and evaluate a trace-driven simulator for MRAM, called MRAMsim. We have proposed various Address Mapping Schemes to improve the efficiency of MRAM memory system. We show that MRAM is a promising candidate for main memory system. The experimental results reveal that MRAM-based main memory system is able to achieve fast response time and high bandwidth.
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