Abstract:For supported graphene, reliable differentiation and clear visualization of distinct graphene layers and fine features such as wrinkles are essential for revealing the structure-property relationships for graphene and graphene-based devices. Scanning electron microscopy (SEM) has been frequently used for this purpose where high-quality image contrast is critical. However, it is surprising that the effect of key imaging parameters on the image contrast has been seriously undermined by the graphene community. Here, superior image contrast of secondary electron (SE) images for few-layer graphene supported on SiC and SiO2/Si is realized through simultaneously tuning two key parametersacceleration voltage (V-acc) and working distance (WD). The overlooked role of WD in characterizing graphene is highlighted and clearly demonstrated. A unified model of V-acc and WD dependence of three types of SE collected by the standard side-attached Everhart-Thornley (E-T) SE detector is conceptually developed for mechanistically understanding the improved mass thickness contrast for supported few-layer graphene. The findings reported here will have important implications for effective characterizations of atomically thick 2D materials and devices.

Quantitative Secondary Electron Imaging for Work Function Extraction at Atomic Level and Layer Identification of Graphene

Quantum Time-Dependent Monte Carlo Simulation of Electron Devices with 2D Linear-Band Materials: a Genuine TeraHertz Signature for Graphene

Application of High Spatial Resolution Scanning Work Function Spectroscopy to Semiconductor Surfaces and Interfaces

Direct Observation of the Work Function Evolution of Graphene-Two-Dimensional Metal Contacts

Time-dependent Quantum Monte Carlo Simulation of Electron Devices with Two-Dimensional Dirac Materials: A Genuine Terahertz Signature for Graphene

Mapping Conductance and Switching Behavior of Graphene Devices In Situ

High contrast imaging and thickness determination of graphene with in-column secondary electron microscopy

Work Function Mapping of Single-Crystal Graphene

Large-Area High-Throughput Identification and Quality Control of Graphene and Few-Layer Graphene: Prospects of Industry-Scale Applications

Direct Imaging of Electron Orbitals with a Scanning Transmission Electron Microscope

Theoretical Perspective of Atomic Resolution Secondary Electron Imaging

Energy-Dispersive X-Ray Spectroscopy of Atomically Thin Semiconductors and Heterostructures

Fermi Level-Tuned Optics of Graphene for Attocoulomb-Scale Quantification of Electron Transfer at Single Gold Nanoparticles

High-Contrast Sem Imaging Of Supported Few-Layer Graphene For Differentiating Distinct Layers And Resolving Fine Features: There Is Plenty Of Room At The Bottom

Direct imaging of electron density with a scanning transmission electron microscope

Determination of the Number of Graphene Layers: Discrete Distribution of the Secondary Electron Intensity Derived from Individual Graphene Layers

Measurement of the Low-Energy Electron Inelastic Mean Free Path in Monolayer Graphene

Sensitive Characterization of the Graphene Transferred onto Varied Si Wafer Surfaces via Terahertz Emission Spectroscopy and Microscopy (TES/LTEM)

Ultralow secondary electron emission of graphene.

Quantum Electrometer for Time-Resolved Material Science at the Atomic Lattice Scale

Thickness characterization of atomically-thin WSe$_2$ on epitaxial graphene by low-energy electron reflectivity oscillations