Abstract:Recently, graphene has gained a lot of attention in the electronic industry due to its unique properties and has paved the way for realizing novel devices in the field of electronics. For the development of new device applications, it is necessary to grow large wafer-sized monolayer graphene samples. Among the methods to synthesize large graphene films, chemical vapor deposition (CVD) is one of the promising and common techniques. However, during the growth and transfer of the CVD graphene monolayer, defects such as wrinkles, cracks, and holes appear on the graphene surface. These defects can influence the electrical properties and it is of interest to know the quality of graphene samples non-destructively. Electrical impedance tomography (EIT) can be applied as an alternate method to determine conductivity distribution non-destructively. The EIT inverse problem of reconstructing conductivity is highly non-linear and is heavily dependent on measurement accuracy and modeling errors related to an accurate knowledge of electrode location, contact resistances, the exact outer boundary of the graphene wafer, etc. In practical situations, it is difficult to eliminate these modeling errors as complete knowledge of the electrode contact impedance and outer domain boundary is not fully available, and this leads to an undesirable solution. In this paper, a difference imaging approach is proposed to estimate the conductivity change of graphene with respect to the reference distribution from the data sets collected before and after the change. The estimated conductivity change can be used to locate the defects on the graphene surface caused due to the CVD transfer process or environment interaction. Numerical and experimental results with graphene sample of size 2.5 × 2.5 cm are performed to determine the change in conductivity distribution and the results show that the proposed difference imaging approach handles the modeling errors and estimates the conductivity distribution with good accuracy.

High contrast imaging and thickness determination of graphene with in-column secondary electron microscopy

Determination of the Number of Graphene Layers: Discrete Distribution of the Secondary Electron Intensity Derived from Individual Graphene Layers

Accurate thickness measurement of graphene

Spectroscopic Metrics Allow in Situ Measurement of Mean Size and Thickness of Liquid-Exfoliated Few-Layer Graphene Nanosheets

Rayleigh Imaging of Graphene and Graphene Layers

Optical image-based thickness characterization of atomically thin nanomaterials using computer vision techniques

Unveiling the Thickness-Dependent Mechanical Properties of Graphene Papers by in Situ SEM Tension.

Auger Electron Spectroscopy: a Rational Method for Determining Thickness of Graphene Films.

Thickness Estimation of Epitaxial Graphene on SiC using Attenuation of Substrate Raman Intensity

Large-Area High-Throughput Identification and Quality Control of Graphene and Few-Layer Graphene: Prospects of Industry-Scale Applications

Scanning Tunneling Microscope Studies of Ultrathin Graphitic (graphene) Films on an Insulating Substrate under Ambient Conditions

Non-destructive and Rapid Evaluation of CVD Graphene by Dark Field Optical Microscopy

High-Resolution Scanning Tunneling Microscopy Imaging of Mesoscopic Graphene Sheets on an Insulating Surface

Simple approach for high-contrast optical imaging and characterization of graphene-based sheets

Thickness identification of two-dimensional materials by optical imaging.

Imaging Conductivity Changes in Monolayer Graphene Using Electrical Impedance Tomography

Z-contrast Atom Counting Using the Few-Layer Graphene Sheets

Quantitative annular dark-field imaging of single-layer graphene—II: atomic-resolution image contrast

Optical Methods for Determining Thicknesses of Few-Layer Graphene Flakes

Centimeter-scale high-resolution metrology of entire CVD-grown graphene sheets.

Versatile technique for assessing thickness of 2D layered materials by XPS