Thickness characterization of atomically-thin WSe$_2$ on epitaxial graphene by low-energy electron reflectivity oscillations

Sergio C. de la Barrera,Yu-Chuan Lin,Sarah M. Eichfeld,Joshua A. Robinson,Qin Gao,Michael Widom,Randall M. Feenstra

DOI: https://doi.org/10.1116/1.4954642

2016-06-14

Abstract:In this work, low-energy electron microscopy is employed to probe structural as well as electronic information in few-layer WSe$_2$ on epitaxial graphene on SiC. The emergence of unoccupied states in the WSe$_2$--graphene heterostructures are studied using spectroscopic low-energy electron reflectivity. Reflectivity minima corresponding to specific WSe$_2$ states that are localized between the monolayers of each vertical heterostructure are shown to reveal the number of layers for each point on the surface. A theory for the origin of these states is developed and utilized to explain the experimentally observed featured in the WSe$_2$ electron reflectivity.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to develop a method to accurately characterize the thickness of atomically thin WSe2 (tungsten diselenide) on epitaxial graphene by using low - energy electron reflectivity oscillations. Specifically, the research aims to reveal the relationship between the number of WSe2 layers and their electron reflection characteristics through low - energy electron microscopy (LEEM) and low - energy electron diffraction (LEED) techniques combined with theoretical calculations, so as to achieve an unambiguous count of the number of WSe2 layers.

### Specific description of the problem

1. **Accurately characterize the number of WSe2 layers**:
- Researchers hope to distinguish single - layer, double - layer or multi - layer WSe2 through low - energy electron reflection characteristics in order to achieve accurate measurement of the thickness of WSe2.

2. **Understand the relationship between electron reflection characteristics and the number of layers**:
- Through experimental measurements and theoretical calculations, study the characteristics of WSe2 with different numbers of layers in the low - energy electron reflection spectrum, especially how the position and shape of the reflectivity minimum change with the number of layers.

3. **Verify the theoretical model**:
- Develop and verify a theoretical model to explain the origin of specific electron states in WSe2 and their relationship with low - energy electron reflection characteristics, ensuring that experimental results can be theoretically explained and supported.

### Methods and techniques

- **Experimental methods**:
- Use low - energy electron microscopy (LEEM) and low - energy electron diffraction (LEED) techniques to study the structure and electronic characteristics of WSe2 on epitaxial graphene.
- By changing the sample voltage, record the change in the intensity of reflected electrons and generate a low - energy electron reflection spectrum (LEER).

- **Theoretical calculations**:
- Use the Vienna Ab - Initio Simulation Package (VASP) to perform first - principles calculations to simulate the electronic structure and reflection characteristics of multi - layer WSe2.
- Introduce an imaginary - part potential \( V_i=0.4 \text{eV}+0.03E \) to consider inelastic scattering effects and optimize the agreement between the theoretical model and experimental results.

### Results and conclusions

- **Experimental results**:
- Experimental results show that WSe2 with different numbers of layers exhibits different characteristics in the low - energy electron reflection spectrum. In particular, the position and shape of the reflectivity minimum can be used to distinguish single - layer, double - layer or multi - layer WSe2.

- **Theoretical explanation**:
- Theoretical calculations indicate that specific electron states in WSe2 (such as inter - band states) will lead to the reflectivity minimum in the low - energy electron reflection spectrum, and the position and shape of these minima change with the number of layers, which supports the experimental observations.

- **Application prospects**:
- This method is not only applicable to WSe2, but can also be extended to other two - dimensional transition - metal dichalcogenide materials, providing a new and effective means for thickness characterization of two - dimensional materials.

Through these studies, the paper has successfully solved the problem of how to accurately characterize the number of WSe2 layers by using low - energy electron reflection characteristics, and has provided theoretical and technical support for future research.