Abstract:We present the electronic and structural properties of monolayer WSe$_{2}$ grown by pulsed-laser deposition on monolayer graphene (MLG) on SiC. The spin splitting in the WSe$_{2}$ valence band at $\overline{\mathrm{K}}$ was $\Delta_\mathrm{SO}=0.469\pm0.008$ eV by angle-resolved photoemission spectroscopy (ARPES). Synchrotron-based grazing-incidence in-plane X-ray diffraction (XRD) revealed the in-plane lattice constant of monolayer WSe$_{2}$ to be $a_\mathrm{WSe_2}=3.2757\pm0.0008 \mathrm{Å}$. This indicates a lattice compression of -0.19 % from bulk WSe$_{2}$. By using experimentally determined graphene lattice constant ($a_\mathrm{MLG}=2.4575\pm0.0007 \mathrm{Å}$), we found that a 3$\times$3 unit cell of the slightly compressed WSe$_{2}$ is perfectly commensurate with a 4$\times$4 graphene lattice with a mismatch below 0.03 %, which could explain why the monolayer WSe$_{2}$ is compressed on MLG. From XRD and first-principles calculations, however, we conclude that the observed size of strain is negligibly small to account for a discrepancy in $\Delta_\mathrm{SO}$ found between exfoliated and epitaxial monolayers in earlier ARPES. In addition, angle-resolved, ultraviolet and X-ray photoelectron spectroscopy shed light on the band alignment between WSe$_{2}$ and MLG/SiC and indicate electron transfer from graphene to the WSe$_{2}$ monolayer. As further revealed by atomic force microscopy, the WSe$_{2}$ island size depends on the number of carbon layers on top of the SiC substrate. This suggests that the epitaxy of WSe$_{2}$ favors the weak van der Waals interactions with graphene while it is perturbed by the influence of the SiC substrate and its carbon buffer layer.

Thickness characterization of atomically-thin WSe$_2$ on epitaxial graphene by low-energy electron reflectivity oscillations

Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe2 Thin Films

Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(000-1)

Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures.

Electronic Structure of Exfoliated Millimeter-Sized Monolayer WSe2 on Silicon Wafer

Termination-dependent Edge States of MBE-grown WSe2

Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2

Molecular-beam Epitaxy of Monolayer and Bilayer WSe 2 : a Scanning Tunneling Microscopy/spectroscopy Study and Deduction of Exciton Binding Energy

Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

Excitons in epitaxially grown WS2 on Graphene: a nanometer-resolved EELS and DFT study

One Dimensional Metallic Edges in Atomically Thin WSe 2 Induced by Air Exposure

Excitonic resonances in thin films of WSe2: From monolayer to bulk material

Anomalous Raman Spectra and Thickness Dependent Electronic properties of WSe2

WSe2 Homojunctions and Quantum Dots Created by Patterned Hydrogenation of Epitaxial Graphene Substrates

Acquisition and Analysis of Scanning Tunneling Spectroscopy Data $-$ WSe$_2$ Monolayer

Optical Signature of Symmetry Variations and Spin-Valley Coupling in Atomically Thin Tungsten Dichalcogenides

Probing Interlayer Interactions in WSe2-graphene Heterostructures by Ultralow-Frequency Raman Spectroscopy

Quantum-Confined Electronic States Arising from the Moiré Pattern of MoS2-WSe2 Heterobilayers.

Spin splitting and strain in epitaxial monolayer WSe$_2$ on graphene

Direct and Diffuse Reflection of Electron Waves at Armchair Edges of Epitaxial Graphene

Optical Band Engineering of Monolayer WSe2 in a Scanning Tunneling Microscope