Abstract:Bias non-conservation characteristics of radio-frequency noise mechanism of 40-nm n-MOSFET are observed by modeling and measuring its drain current noise. A compact model for the drain current noise of 40-nm MOSFET is proposed through the noise analysis. This model fully describes three kinds of main physical sources that determine the noise mechanism of 40-nm MOSFET, i.e., intrinsic drain current noise, thermal noise induced by the gate parasitic resistance, and coupling thermal noise induced by substrate parasitic effect. The accuracy of the proposed model is verified by noise measurements, and the intrinsic drain current noise is proved to be the suppressed shot noise, and with the decrease of the gate voltage, the suppressed degree gradually decreases until it vanishes. The most important findings of the bias non-conservative nature of noise mechanism of 40-nm n-MOSFET are as follows. (i) In the strong inversion region, the suppressed shot noise is weakly affected by the thermal noise of gate parasitic resistance. Therefore, one can empirically model the channel excess noise as being like the suppressed shot noise. (ii) In the middle inversion region, it is almost full of shot noise. (iii) In the weak inversion region, the thermal noise is strongly frequency-dependent, which is almost controlled by the capacitive coupling of substrate parasitic resistance. Measurement results over a wide temperature range demonstrate that the thermal noise of 40-nm n-MOSFET exists in a region from the weak to strong inversion, contrary to the predictions of suppressed shot noise model only suitable for the strong inversion and middle inversion region. These new findings of the noise mechanism of 40-nm n-MOSFET are very beneficial for its applications in ultra low-voltage and low-power RF, such as novel device electronic structure optimization, integrated circuit design and process technology evaluation.

A Modified 1/F Noise Model for Mosfets with Ultra-Thin Gate Oxide

Numerical Investigation of Low Frequency Noise in MOSFETs with High-k Gate Stacks

Observation of Nonconservation Characteristics of Radio Frequency Noise Mechanism of 40-Nm N-Mosfet

A closed-form thermal noise model of SOI MOSFETs for low noise application

Direct Tunneling Current Model for MOS Devices with Ultra-Thin Gate Oxide Including Quantization Effect and Polysilicon Depletion Effect

Modeling On Direct Tunneling Current In Ultra-Thin Oxide Nmosfet Considering Quantum Mechanics

A rigorous analytical model for short-channel junctionless double-gate MOSFETs

Thickness Dependence of Low-Frequency Noise in MoS 2 Field-Effect Transistors with Enhanced Back-Gate Control

Low-Frequency Noise Modeling of Amorphous Indium–Zinc-Oxide Thin-Film Transistors

Modeling of non-intrinsic noise in nanometer metal oxide semiconductor field effect transistors

Two-dimensional analytical model for a non-lightly doped drain SOI MOSFET

A Quantum-Confinement Model for Surrounding-Gate MOSFETS from Subthreshold to Strong-Inversion Regions

A Physical Threshold Voltage Model of Nanoscale Ultra-thin Body Ultra-thin Box SOI MOSFETs with a Gaussian Doping Profile

Time-Domain Modeling of Low-Frequency Noise in Deep-Submicrometer MOSFET

A Two-Dimensional Analytical Model for Short Channel Junctionless Double-Gate MOSFETs

An Analytical Subthreshold Swing Model for Fully-Depleted MOSFETs with Vertical Gaussian Profile Fabricated on Modified Silicon-on-insulator Wafers

A More Accurate Potential-Based Drain Current Model for Bulk-Mosfets

Improved Compact RF-Noise Modelling for Deep SubMicron MOSFETs

Two-Dimensional Analytic Model for Fully Depleted Surrounding Gate Metal-Oxide-Semiconductor Field-Effect Transistor

Physics-based bias-dependent compact modeling of 1/f noise in single- to few- layer 2D-FETs

Modeling and characterization of the low frequency noise behavior for amorphous InGaZnO thin film transistors in the subthreshold region