Abstract:GeTe and Ge0.99-xIn0.01SnxTe0.94Se0.06 (x = 0, 0.01, 0.03, and 0.06) samples were prepared by vacuum synthesis combined with spark plasma sintering (SPS). The thermoelectric properties of GeTe were coordinated by multiple doping of Sn, In, and Se. In this work, a maximum zT(zT = S2σT/κ) of 0.9 and a power factor (PF = S2σ) of 3.87 μWmm-1 K-2 were obtained in a sample of Ge0.99In0.01Te0.94Se0.06 at 723K. The XRD results at room temperature show that all samples are rhombohedral phase structures. There is a peak (~27°) of the Ge element in GeTe and the sample (x = 0), but it disappears after Sn doping, indicating that Sn doping can promote the dissolution of Ge. The scattering mechanism of the doped samples was calculated by the conductivity ratio method. The results show that phonon scattering Is dominant in all samples, and alloy scattering is enhanced with the increase in the Sn doping amount. In doping can introduce resonance energy levels and increase the Seebeck coefficient, and Se doping can introduce point defects to suppress phonon transmission and reduce lattice thermal conductivity. Therefore, the thermoelectric properties of samples with x = 0 improved. Although Sn doping will promote the dissolution of Ge precipitation, the phase transition of the samples near 580 K deteriorates the thermoelectric properties. The thermoelectric properties of Sn-doped samples improved only at room temperature to ~580 K compared with pure GeTe. The synergistic effect of multi-element doping is a comprehensive reflection of the interaction between elements rather than the sum of all the effects of single-element doping.

Effects of Ca doping on the crystallization kinetics of GeTe

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Improvement of thermal stability and phase change behavior of Ge2Sb2Te5 thin films by Calcium doping

Nitrogen tuned crystal structure, optical band gap, localized states on amorphous and crystalline GeTe films

Ag掺杂对Ge2 Sb2 Te5结晶行为的影响

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Effects of Si Doping on Phase Transition of Ge2Sb2Te5 Films by in Situ Resistance Measurements

Effects of Si Doping on the Structural and Electrical Properties of Ge2Sb2Te5 Films for Phase Change Random Access Memory

Study on the Effect of Sn, In, and Se Co-Doping on the Thermoelectric Properties of GeTe

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Atomistic origin of doping-enhanced rapid crystallization in Ag-doped Ge-Sb-Te alloys: a joint experimental and theoretical study

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Effects of carbon concentration on the local atomic structure of amorphous GST

Effect of Ca doping on Li ion conductivity of Ge and Ta doped garnet LLZO

Effect of Gd-doping on Thermoelectric Properties of Ca 3 Co 4 O 9+δ Ceramics

Enhancing the Curie Temperature in Cr2Ge2Te6 via Charge Doping: A First-Principles Study

Study on the Crystallization Behavior of Ge2Sb2Te5 and Silicon Doped Ge2Sb2Te5 Films

Phase change characteristics of aluminum doped Ge(2)Sb(2)Te(5) films prepared by magnetron sputtering.

Effect of the Sn dopant on the crystallization of amorphous Ge 2 Sb 2 Te 5 films induced by an excimer laser

Effects of Thickness and Si 3 N 4 Coverage on the Phase Transition Characteristics of GeTe Thin Films