Photoelectrical properties of nitrogen doped TiO 2 nanotubes by anodic oxidation of N + implanted Ti foils

xinggang hou,feng liu,kun yao,huiyan ma,jianhua deng,dejun li,bin liao
DOI: https://doi.org/10.1016/j.matlet.2014.03.050
IF: 3
2014-01-01
Materials Letters
Abstract:Ti foils were implanted by N+ with accelerating voltage of 60kV. The dose of implantation was chosen as 1×1016, 1×1017 and 5×1017ions/cm2 respectively. N-doped TiO2 nanotubes (TNTs) were produced by anodic oxidation method. Scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) were used to study the structural and chemical properties of TNTs. The photocurrent of TNTs under both UV and visible light irradiation was measured and recorded in situ using an electrochemical station. The results showed that N-doped TNTs displayed strong absorption remarkably in both UV and visible range. Not only the separation efficiency of photo-generated electron–hole pairs of N-doped TNTs was improved, but the absorption edge of the samples was shifted to longer wavelength for the implantation. The best implanted dose with premier photocurrent was 1×1017ions/cm2 under both UV and visible light irradiation.
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