Abstract:Graphene, the atomic thin carbon film with honeycomb lattice, holds great promise in a wide range of applications, due to its unique band structure and excellent electronic, optical, mechanical, and thermal properties. Scientists are researching this star material because of the development of various emerging preparation techniques, among which chemical vapor deposition (CVD) has received the fastest advances in the past few years. For the CVD growth of graphene, the ultimate goal is to achieve the highest quality in the largest scale and lowest cost with a precise control of layer thickness, stacking order, and crystallinity. To meet this goal, researchers need a comprehensive understanding and effective controlling of the growth process, especially to its elementary steps. In this Account, we focus on our recent progresses toward the controlled surface growth of graphene and its two-dimensional (2D) hybrids via rational designs of CVD elementary processes, namely, process engineering. A typical CVD process consists of four main elementary steps: (A) adsorption and catalytic decomposition of precursor gas, (B) diffusion and dissolution of decomposed carbon species into bulk metal, (C) segregation of dissolved carbon atoms onto the metal surface, and finally, (D) surface nucleation and growth of graphene. Absence or enhancement of each elementary step would lead to significant changes in the whole growth process. Metals with certain carbon solubility, such as nickel and cobalt, involve all four elementary steps in a typical CVD process, thus providing us an ideal system for process engineering. The elementary segregation process can be completely blocked if molybdenum is introduced into the system as an alloy catalyst, yielding perfect monolayer graphene almost independent of growth parameters. On the other hand, the segregation-only process of predissolved solid carbons is also capable of high-quality graphene growth. By using a synergetic Cu-Ni alloy, we are able to further enhance the control to such a segregation technique, especially for the thickness of graphene. By designing a cosegregation process of carbon atoms with other elements, such as nitrogen, doped graphene could be synthesized directly with a tunable doping profile. Copper with negligible carbon solubility provides another platform for process engineering, where both carbon dissolution and segregation steps are negligible in the CVD process. Carbon atoms decomposed from precursors diffuse on the surface and build up the thermodynamically stable honeycomb lattice. As a result, graphene growth on copper is self-limited, and formation of multilayer graphene is generally prohibited. Being able to control this process better, as well as the high quality produced, makes copper-based growth the dominating synthesis procedure in the graphene community. We designed a two-temperature zone system to spatially separate the catalytic decomposition step of carbon precursors and the surface graphitization step for breaking this self-limited growth feature, giving high-quality Bernal stacked bilayer graphene via van der Waals epitaxy. We performed the so-called wrinkle engineering by growing graphene on nanostructured copper foil together with a structure-preserved surface transfer. In such a way, we controlled the wrinkling or folding on graphene and further fabricated graphene nanoribbon arrays by self-masked plasma etching. Moreover, by designing a two-step patching growth process on copper, we succeeded in synthesizing the mosaic graphene, a patchwork of intrinsic and nitrogen-doped graphene connected by single crystalline graphene p-n junctions. By following a general concept of process engineering, our work on the designed CVD growth of graphene and its 2D hybrids provides a unique insight of this research field. It enables the precise growth control of graphene together with the in-depth understanding of CVD growth process, which would further stimulate the pace of graphene applications.

A Hybrid‐Type CVD System for Graphene Growth

Hybrid cold and hot-wall chamber for fast synthesis of uniform graphene

Superclean Growth of Graphene Using a Cold‐Wall Chemical Vapor Deposition Approach

Toward batch synthesis of high-quality graphene by cold-wall chemical vapor deposition approach

Design and Simulation of High-Temperature Micro-Hotplate for Synthesis of Graphene Using uCVD Method

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

High quality monolayer graphene synthesized by resistive heating cold wall chemical vapour deposition

Solar-thermal cold-wall chemical vapor deposition reactor design and characterization for graphene synthesis

Facile synthesis of graphene on dielectric surfaces using a two-temperature reactor CVD system.

Research on Rapid Growth of Monolayer Graphene by Vertical Cold-Wall CVD Method

A Symmetrical Bi-Electrode Electrochemical Technique for High-Efficiency Transfer of Cvd-Grown Graphene

Cold Wall CVD (CWCVD) in the Synthesis of Few Layered Graphene on Ni

Note: Continuous Synthesis of Uniform Vertical Graphene on Cylindrical Surfaces.

Toward large-scale CVD graphene growth by enhancing reaction kinetics via an efficient interdiffusion mediator and mechanism study utilizing CFD simulations

Fast Batch Production of High-Quality Graphene Films in a Sealed Thermal Molecular Movement System.

Controllable Chemical Vapor Deposition of Large Area Uniform Nanocrystalline Graphene Directly on Silicon Dioxide

Nucleation and growth of single layer graphene on electrodeposited Cu by cold wall chemical vapor deposition

Designed CVD growth of graphene via process engineering.

New Insight into the Metal-Catalyst-Free Direct Chemical Vapor Deposition Growth of Graphene on Silicon Substrates

Low-Temperature Growth of Graphene by Chemical Vapor Deposition Using Solid and Liquid Carbon Sources

Low-temperature quantum transport in CVD-grown single crystal graphene