Abstract:The successful synthesis of high crystalline quality and high aspect ratio GaAs nanowires (NWs) with a uniform diameter is needed to develop advanced applications beyond the limits established by thin film and bulk material properties. Vertically aligned GaAs NWs have been extensively grown by Ga-assisted vapor-liquid-solid (VLS) mechanism on Si(111) substrates, and they have been used as building blocks in photovoltaics, optoelectronics, electronics, and so forth. However, the nucleation of parasitic species such as traces and nanocrystals on the Si substrate surface during the NW growth could affect significantly the controlled nucleation of those NWs, and therefore the resulting performance of NW-based devices. Preventing the nucleation of parasitic species on the Si substrate is a matter of interest, because they could act as traps for gaseous precursors and/or chemical elements during VLS growth, drastically reducing the maximum length of grown NWs, affecting their morphology and structure, and reducing the NW density along the Si substrate surface. This work presents a novel and easy to develop growth method (i.e., without using advanced nanolithography techniques) to prevent the nucleation of parasitic species, while preserving the quality of GaAs NWs even for long duration growths. GaAs NWs are grown by Ga-assisted chemical beam epitaxy on oxidized Si(111) substrates using triethylgallium and tertiarybutylarsine precursors by a two-step-based growth method presented here; this method includes a growth interruption for an oxidation on air between both steps of growth, reducing the nucleation of parasitic crystals on the thicker SiO x capping layer during the second and longer growth step. VLS conditions are preserved overtime, resulting in a stable NW growth rate of around 6 μm/h for growth times up to 1 h. Resulting GaAs NWs have a high aspect ratio of 85 and average radius of 35 nm. We also report on the existence of characteristic reflection high-energy electron diffraction patterns associated with the epitaxial growth of GaAs NWs on Si(111) substrates, which have been analyzed and compared to the morphological characterization of GaAs NWs grown for different times under different conditions.

Growth of Single Crystal GaAs Nanowires by a Surface Diffusion-Mediated Solid-Liquid-solid Process

Ultrafast growth of single-crystalline Si nanowires

Growth of Zinc Blende Gaas/Algaas Radial Heterostructure Nanowires by A Two-Temperature Process

Enhanced synthesis method to prepare crystalline GaAs nanowires with high growth yield

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

Growth Of Amorphous Silicon Nanowires Via A Solid-Liquid-Solid Mechanism

Facile Synthesis and Growth Mechanism of Ni-catalyzed GaAs Nanowires on Non-Crystalline Substrates

Size-Independent Growth of Pure Zinc Blende Gaas Nanowires

Size-Independent Growth of GaAs Nanowires

Growth of Silicon Nanowires by Heating Si Substrate

Ga Crystallization Dynamics During Annealing of Self-Assisted GaAs Nanowires

Taper-free and vertically oriented Ge nanowires on Ge/Si substrates grown by a two-temperature process

Controlled Growth of Amorphous Silicon Nanowires Via a Solid-Liquid-Solid (SLS) Mechanism

Silicon Nanowires Grown from Au-coated Si Substrate

High-Density, Defect-Free, and Taper-Restrained Epitaxial GaAs Nanowires Induced from Annealed Au Thin Films

Controlled Growth of Heterostructured Ga/GaAs Nanowires with Sharp Schottky Barrier

Atomistics of Vapour–liquid–solid Nanowire Growth

Monte carlo simulation of planar GaAs nanowire growth

Simple And High-Yield Method For Synthesizing Single-Crystal Gan Nanowires

Two-Step Fabrication of Self-Catalyzed Ga-Based Semiconductor Nanowires on Si by Molecular-Beam Epitaxy

A Novel Growth Method To Improve the Quality of GaAs Nanowires Grown by Ga-Assisted Chemical Beam Epitaxy