Abstract:Abstract The microstructure of as-cast hypereutectic Al-(17 or 25) Si-xLa (x - 0, 0.4, 1, 3, 6 wt.%) alloys and the effect of La on the Si phase have been investigated. The microstructure was examined using optical and electron microscopy. The modification effects of La addition on the morphology and size of both the primary and the eutectic Si were observed. However, such effects are uneven and there seems no systematic change for the effectiveness of La modification with increasing La contents. The modification of La may be explained by the suppression of the growth of Si crystals through reduction of the eutectic reaction temperature or through enveloping of primary Si crystals, or additional twinning. Large particles of La-rich compounds are always observed associated with large primary Si crystals and unmodified eutectic Si crystals, while small La-rich particles are associated with small primary Si crystals and modified eutectic Si crystals. The overall concentration of La-rich compounds, formed in the Al–Si alloys containing more than 1 wt.% La, could be represented as a ternary AlSi2La2 phase, which actually contains the LaSi2 phase and an unknown ternary Al x Si y La phase.

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