The Nano Tungsten Thin Film and its Contacting Property with Aluminium Electrodes

Wei Liang,Yu Feng Jin,Jin Wen Zhang
DOI: https://doi.org/10.4028/www.scientific.net/amr.1082.455
2014-01-01
Advanced Materials Research
Abstract:In this paper we report nanothickness tungsten (W) thin films with nanoscale thickness prepared by DC magnetron sputtering. Three kinds of samples were realized using micromachining technology, including two-wire and four-wire terminal configurations and only Al electrodes. Using four-wire terminal method, we studied on the electrical property of W film and the contacting resistance between W film and Al electrode. The results show that our as-deposited W film is β-W crystal structure and exhibits good resistive property. Al formed a good ohmic contact with W films. Both the resistivity of W film and the contacting resistance declined nearly linearly with the thickness increasing.
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