Abstract:In this work, a unique approach in experiments was carried out by a pulsed DC sputtering for the 60/30-min process in one-step and multi-step (two- and four-step) deposition to obtain trends of residual stress and film properties of aluminum nitride (AlN). Film characteristics comparison between one-step and multi-step deposition was used to study the correlation among film crystallite orientation, residual stress, and film features. The thickness, microstructure, residual stress, and crystallite status of AlN films were examined by scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, and atomic force microscopy (AFM). The results show that the films have different stress characteristics in different microstructures when processed at the same amount of time in different deposition intervals. The increase in the degree of ion bombardment and induced substrate temperature raised leads to the interpretation of different microstructural changes in films. In this investigation, the film with thickness about 1300 nm for one-step deposition has a surface roughness of 2.67 nm, the grain size of 65.1 nm, and residual stress of 1575 MPa. In the four-step deposition, these values were reduced to 2.46 nm, 51.4 nm, and 841 MPa, respectively. In situ optical emission spectroscopy (OES) data were collected during plasma deposition of selected dominant wavelengths of N2 (315 and 336 nm) and Al (394 and 396 nm) for large-scale data analysis. Based on a cross-validation test executed from OES data preprocessing, the methodology with the principal component analysis (PCA) and value of microstructure characteristics (VMC) algorithm demonstrated that this unique multi-step deposition technique can provide a good stress gradient control from microstructural analysis and can effectively classify film characteristics in AlN film deposition.

Raman Spectroscopic Assessments of Structural Orientation and Residual Stress in Wurtzitic AlN Film Deposited on (001) Si

Effects of Surface/interface Stress on Phonon Properties and Thermal Conductivity in AlN/GaN/AlN Heterostructural Nanofilms

Residual Stress in AlN Films Grown on Sapphire Substrates by Molecular Beam Epitaxy

Influence of sputtering parameters on structures and residual stress of AlN films deposited by DC reactive magnetron sputtering at room temperature

Residual stress classification of pulsed DC reactive sputtered aluminum nitride film via large-scale data analysis of optical emission spectroscopy

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Beyond structural stabilization of highly-textured AlN thin film: the role of chemical effects

The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy

Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H–SiC

Effects of crystal orientation, substrate type, and substrate temperature on residual stress of AlN thin films deposited by different deposition methods

Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices

Minimizing residual stress of aluminum nitride (AlN) thin films using multi-step deposition of DC pulsed sputtering

Nanoindentation Mechanical Studies of Bulk AlN Single Crystals with Different Orientations

Optical properties and hardness of highly a-axis oriented AlN films

Strain accumulation and relaxation on crack formation in epitaxial AlN film on Si (111) substrate

Stress distribution at the AlN/SiC heterointerface probed by Raman spectroscopy

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD

A multi-step deposited AlN films in a DC pulsed sputtering and film characteristics classification with principal component analysis of OES data

High-Quality AlN Grown by a Combination of Substrate Pretreatment and Periodic Growth Mode Control

Controlled exfoliation of wafer-scale single-crystalline AlN film on MOCVD-grown layered h-BN