Abstract:Organic electronics is the technology enabling truly flexible electronic devices. However, despite continuous improvements in the charge-carrier mobility, devices used for digital circuits based on organic field-effect transistors (OFETs) have still not achieved a commercial breakthrough. A substantial hurdle to the realization of effective digital circuitry is the proper control of the threshold voltage Vth. Previous approaches include doping or self-assembled monolayers to provide the threshold voltage control. However, while self-assembled monolayers-modified OFETs often do not show the level of reproducibility which is required in digital circuit engineering, direct doping of the channel material results in a poor on/off ratio leading to unfavorable power dissipation. Furthermore, direct doping of the channel material in organic semiconductors could cause the formation of trap states impeding the charge-carrier transport. Employing the concept of modulation-doped field-effect transistors (MODFETs), which is well established in inorganic electronics, the semiconductor-dopant interaction is significantly reduced, thereby solving the above-described problems. Here, we present the concept of an organic semiconductor MODFET which is composed of an organic-organic heterostructure between a highly doped wide-energy-gap material and an undoped narrow-energy-gap material. The effectiveness of charge transfer across the interface is controlled by the doping concentration and thickness of an undoped buffer layer. A complete picture of the energy landscape of this heterostructure is drawn using impedance spectroscopy and ultraviolet photoelectron spectroscopy. Furthermore, we analyze the effect of the dopant density on the charge-carrier transport properties. The incorporation of these heterostructures into OFETs enables a precise adjustment of the threshold voltage by using the modulation doping concept.

Electrical Instability Induced by Electron Trapping in Low-Bandgap Donor-Acceptor Polymer Field-Effect Transistors.

Improving Electrical Stability and Ideality in Organic Field‐Effect Transistors by the Addition of Fullerenes: Understanding the Working Mechanism

Air- and Active Hydrogen-Induced Electron Trapping and Operational Instability in n-Type Polymer Field-Effect Transistors

Influence of Trapping States at the Dielectric–dielectric Interface on the Stability of Organic Field-Effect Transistors with Bilayer Gate Dielectric

Electrical Double‐Slope Nonideality in Organic Field‐Effect Transistors

Intrinsic Charge Carrier Mobility in Single-Crystal OFET by “fast Trapping Vs. Slow Detrapping” Model

Charge-Trapping-Induced Non-Ideal Behaviors in Organic Field-Effect Transistors.

Study on the Instability of Organic Field-Effect Transistors Based on Fluorinated Copper Phthalocyanine

Crucial role of interfacial thermal dissipation in the operational stability of organic field-effect transistors

Ambient Instability of Organic Field-Effect Transistors and Their Improvement Strategies

Gate Bias Stress in Pentacene Field-Effect-Transistors: Charge Trapping in the Dielectric or Semiconductor

High-Performance n-type Polymer Field-effect Transistors with Exceptional Stability

Stability Bottleneck of Organic Field-Effect Transistors: from Mechanism to Solution.

Observation of Large Threshold Voltage Shift Induced by Pre-applied Voltage to SiO2 Gate Dielectric in Organic Field-Effect Transistors

Impact of electrode recrystallization on the stability of organic transistors

Polymer Electret Improves the Performance of the Oxygen-Doped Organic Field-Effect Transistors

Enhancing The Thermal Stability Of Organic Field-Effect Transistors By Electrostatically Interlocked 2d Molecular Packing

Modulation Doping for Threshold Voltage Control in Organic Field-Effect Transistors

Low Temperature, Solution-Processed Ambipolar Field-Effect Transistors Based on Polymer/self-Assembled Monolayer Modified InOx Hybrid Structures for Balanced Hole and Electron Mobilities Exceeding 1 Cm2 V−1 S−1

Study on System Stability of C15H32/TritonX-100/water Emulsions with Ultrasonic Attenuation Measurements and Atomic Force Microscopy

Dopant/Semiconductor/Electret Trilayer Architecture for High‐Performance Organic Field‐Effect Transistors