Abstract:Core-shell structured SiC/SiO2 nanowires (SiC/SiO2 NWs) were synthesized by a simple thermal evaporation method without a catalyst. The influence of the growth temperature and holding time on the microstructure and composition of the nanowires were investigated. The results indicate that within the temperature range of 1150 to 1550 degrees C, the color of SiC/SiO2 nanowires gradually transitions from pure white to off-white with increasing temperature. During this process, the average diameter of SiC/SiO2 increases from 74 nm to 291 nm, while the surface SiO2 layer thickness decreases from 17 nm to 5 nm, with nanowires can reach lengths of hundreds of micrometres. Variations in supersaturation of SiO and CO at different temperatures lead to discrepancies in nanowire diameter and SiO2 shell thickness. At 1350 degrees C, prolonged holding time enhances silicon powder reaction, resulting in increased structural disorder of the obtained SiC/SiO2 nanowires. The nanowire growth follows a vapor-solid (V-S) mechanism. Additionally, the study demonstrates that the photoluminescence (PL) characteristics of the nanowires exhibit a blue shift attributable to their nanoscale dimensions, while variations in emission spectra correlate with stacking faults, SiC diameter, and SiO2 thickness. This work may be provide a theoretical basis for preparing SiC/SiO2 nanowires with different diameters and SiO2 shell thicknesses, which is crucial for advancing the development and application of SiC/SiO2 nanoceramics.

Low-temperature Synthesis of SiC Nanowires with Ni Catalyst

Ultrafast growth of single-crystalline Si nanowires

Catalytic Synthesis of Crystalline SiC Nanowires from a Ni/a-C/Si Sandwich Configuration

Silicon nano-wires grown at low temperature

Synthesis of SiC/SiO2 core–shell nanowires with good optical properties on Ni/SiO2/Si substrate via ferrocene pyrolysis at low temperature

Synthesis of Sic Nanowires by Thermal Evaporation Method Without Catalyst Assistant

Synthesis of SiO2 covered SiC nanowires with milled Si,C nanopowders

A growth mechanism of Si nanowires synthesized by gas condensation of SiO without any catalyst

Gas Pressure Atmosphere Annealing: A Novel Method for the Preparation of SiC Nanowires

High Purity and High Yield Sic Nanowires Synthesis Without Catalyst by Graphite Sheet Layer Assembly and Thermal Evaporation

Growth of SiC Nanowires from NiSi Solution

Synthesis of Si 3 N 4 Nanowires by Catalyst‐free Nitridation of (si + SiO 2 ) Mixture

Phase-controlled Synthesis of Nickel Silicide Nanostructures

Theoretical and experimental study of the mechanism for preparation of SiC nanowires by carbothermal reduction

In-situ Synthesis of SiC/SiO2 Nanowires by Catalyst-Free Thermal Evaporation of Silicon Powder and Their Photoluminescence Properties

Synthesis and Characterization of SiC Nanowires Using Silicon Evaporation

Adjusting the Morphology and Properties of SiC Nanowires by Catalyst Control

High-yield synthesis of single-crystalline 3C–SiC nanowires by a facile autoclave route

Preparation and growth mechanism of β-SiC nanowires by using a simplified thermal evaporation method

Synthesis of Silicon Carbide Nanowires in a Catalyst-Assisted Process

Growth of SiO2 Nanowires Co-Catalyzed by Carbon and Nickel Particles