Abstract:GaN-based wide bandgap semiconductors have become one of the most extensively studied materials and rapid progress has been demonstrated in both optical and electronic devices. Due to their wide bandgap, good thermal and chemical stability, GaN-based semiconductor materials are also very promising for high temperature pH sensor devices. The purpose of this project is to fabricate GaN based pH sensor and characterize the sensing characteristics with different pH values. This project is mainly concerned on fabricating the pH sensor using n- AlGaN/GaN HEMT with gateless FET structure. The sensor must have high performance for Intelligent Quantum (IQ) chip application in order to follow the circulation of epoch. IQ chip is required to develop a new device for Ubiquitous Network Society (UNS). It is a smart chip with nanometer scale quantum processors and memories are integrated on chip with capabilities of wireless communication, wireless power supply and various sensing functions. The discussion in this project report focuses on the device and material structure of fabricated sensor, the fabrication process, the measurement setup and the results of device characterization and measurement. Based on results obtained, the FET behavior was observed from the IDS vs. VDS of device fabricated. The potential of the AlGaN surface at the sensing area can be effectively controlled by the solution. Thus, good gate controllability was observed. Moreover, it was observed in that current collapse normally in AlGaN based FET device. From the experiment, the drain-source current decreases with the pH level as expected. Therefore, it can be concluded that the gateless AlGaN/GaN HEMTs shows significant change in current as exposure to different pH solutions.

Temperature dependence of sensing characteristics of a pH sensor fabricated on AlGaN/GaN heterostructure

A pH sensor using Gallium Nitide based semiconductor with gateless field effect transistor type structure

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor.

High Sensitive pH Sensor Based on AlInN/GaN Heterostructure Transistor

Characteristics of AlGaN/GaN High Electron Mobility Transistor Temperature Sensor

Investigation of High-Sensitivity Ph Sensor Based on Au-Gated AlGaN/GaN Heterostructure

AlGaN/GaN Heterostructure Ph Sensor with Multi-Sensing Segments

Temperature Dependence of the Resistance of Algan/Gan Heterostructures and Their Applications As Temperature Sensors

Optimization of Gate Geometry Towards High-Sensitivity AlGaN/GaN Ph Sensor

Molecular gated-AlGaN/GaN high electron mobility transistor for pH detection.

Surface sensibility and stability of AlGaN/GaN ion-sensitive field-effect transistors with high Al-content AlGaN barrier layer

Ph Sensor Based on an AlGaN/GaN HEMT Structure

On-Chip Integrated High-Sensitivity Temperature Sensor Based on p-GaN/AlGaN/GaN Heterostructure

Enhanced pH Sensitivity of AlGaN/GaN Ion-Sensitive Field-Effect Transistor by Recess Process and Ammonium Hydroxide Treatment

Planar Dual Gate GaN HEMT Cascode Amplifier As a Voltage Readout Ph Sensor with High and Tunable Sensitivities

Advanced Potentiometric Configuration to Enhance Stability and Reliability of AlGaN/GaN HEMT-Based Water-Gated pH Sensor

Enhancing the Sensitivity of GaN High Electron-Mobility Transistors-Based Ph Sensor by Dual Function of Monolithic Integrated Planar Multi-Channel and Ultraviolet Light

Influence of an Integrated Quasi-Reference Electrode on the Stability of All -Solid-state AlGaN/GaN Based Ph Sensors

High Temperature Hall Effect Sensors Based On Algan/Gan Heterojunctions

Enhanced Stability and Sensitivity of AlGaN/GaN-HEMTs Ph Sensor by Reference Device

Enhancing the Sensitivity of the Reference Electrode Free AlGaN/GaN HEMT Based Ph Sensors by Controlling the Threshold Voltage