Abstract:The electronic states in quaternary GaInAsSb/AlGaAsSb strained quantum well (QW) structures grown by molecular beam epitaxy have been investigated both theoretically and experimentally. For strained multiple quantum wells (MQWs), strong luminescence, and well-resolved excitonic absorption peaks are observed even at room temperature, which is indicative of the good quality of our quaternary sample. By fitting the experimental results to the theoretical calculations, we find that the light holes are in well regions (type I MQWs) and the conduction band offset ratio . The critical temperature for the excitonic-polariton - mechanical-exciton transition in this quaternary MQW structure was found to be . The measured intersubband absorption of about is in good agreement with the theoretical calculation. The transition from type I MQWs to type II MQWs for light holes is also predicted theoretically. In the photoluminescence spectra the sharp exciton resonances have been attributed to localized excitons for temperature and to free excitons at higher temperatures up to room temperature. We conclude that the dominant luminescence quenching mechanism in this quaternary system is mainly that of the trapped excitons thermalizing from the localized regions below 100 K, and the thermal carrier activation from the first electron and heavy-hole subbands to the second electron and heavy-hole subbands at higher temperatures. The strength of the exciton - phonon coupling is determined from the linewidth analysis. The inhomogeneous linewidth and homogeneous broadening in both MQW and single-quantum-well (SQW) structures have been discussed. We conclude that the experimental result of stronger exciton - phonon coupling in the quaternary SQW structure will lead to partial ionization of excitons at higher temperatures (above 125 K), in good agreement with the line-shape analysis of the luminescence spectra which clearly shows the presence of band-to-band recombination.

Optical Properties of Excitons in Semiconductor Quantum Wells

Oscillator Strength and Optical Selection Rule of Excitons in Quantum Wells

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Revealing Exciton Dephasing and Transport Dynamics in Semiconductor Quantum Well - Quantum Dot Systems Using Optical 2d Fourier Transform Spectroscopy

Exciton-Exciton and Exciton-Phonon Interactions in an Interfacial Gaas Quantum Dot Ensemble

Optical Properties of Quaternary GaInAsSb/AlGaAsSb Strained Quantum Wells

Optical properties and dynamics of direct and spatially and momentum indirect excitons in AlGaAs/AlAs quantum wells

Separating Homogeneous and Inhomogeneous Line Widths of Heavy- and Light-Hole Excitons in Weakly Disordered Semiconductor Quantum Wells.

Exciton Relaxation and Coupling Dynamics in a GaAs/AlxGa1−xAs Quantum Well and Quantum Dot Ensemble

Exciton-phonon interactions in quantum wells and superlattices

Coherent Linewidths of Interfacial GaAs Quantum Dot Excitons and Incoherent Coupling from Quantum Well Excitons

Room-Temperature Excitons in Strained Ingaas/Gaas Quantum-Wells

Excitons in the wurtzite AlGaN/GaN quantum-well heterostructures

Spectral Broadening and Population Relaxation in A Gaas Interfacial Quantum Dot Ensemble and Quantum Well Nanostructure

Optical 2-D Fourier Transform Spectroscopy of Excitons in Semiconductor Nanostructures

Effects of Confined Longitudinal and Interface Optical Phonons on Excitons in an Asymmetric Quantum Well

Study of Exciton–longitudinal Optical Phonon Coupling in Quantum Wells for Optoelectronic Applications

Exciton States in Wurtzite InGaN/GaN Quantum Wells: Strong Built-in Electric Field and Interface Optical-Phonon Effects

Coherent Optical Processes Of Semiconductors Studied Via Two-Dimensional Fourier Transform Spectroscopy

Temperature Dependence of Optical Transitions of One Dimensional InGaAs/GaAs Quantum Structures

Theoretical Study of Density-Dependent Intraexcitonic Transitions in Optically Excited Quantum Wells