Abstract:Here, we demonstrate an approach that provides a precise control of the dimension of InAs from one-dimensional nanowires to wafer-scale free-standing two-dimensional nanosheets, which have a high degree of crystallinity and outstanding electrical and optical properties, using molecular-beam epitaxy by controlling catalyst alloy segregation. In our approach, two-dimensional InAs nanosheets can be obtained directly from one-dimensional InAs nanowires by silver-indium alloy segregation, which is much easier than all previously reported method, such as traditional buffering technique and select area epitaxial growth. Detailed transmission electron microscopy investigations provide a solid evidence that the catalyst alloy segregation is the origination of the InAs dimensional transformation from one-dimensional nanowires to two-dimensional nanosheets, and even to three-dimensional complex crosses. Using this method, we find that the wafer-scale free-standing InAs nanosheets can be grown on various substrates including Si, MgO, sapphire and GaAs etc. The InAs nanosheets grown at high temperature are pure phase single crystals and have a high electron mobility and a long time-resolved THz kinetics lifetime. Our work will open up a conceptually new and general technology route toward the effective controlling the dimension of the low-dimensional III-V semiconductors. It may also enable the low-cost fabrication of free-standing nanosheet-based devices on an industrial scale.

Quality Control of Gaas Nanowire Structures by Limiting As Flux in Molecular Beam Epitaxy

High-Density, Defect-Free, and Taper-Restrained Epitaxial Gaas Nanowires Induced from Annealed Au Thin Films

The effect of V/III ratio on the morphology and structure of GaAs nanowires by MOCVD

Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy

Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process

Silver-assisted growth of high-quality InAs 1- x Sb x nanowires by molecular-beam epitaxy

Defect-Free <110> Zinc-Blende Structured InAs Nanowires Catalyzed by Palladium

Onset of uncontrolled polytypism during the Au-catalyzed growth of wurtzite GaAs nanowires

Phase Selection in Self-catalyzed GaAs Nanowires

High-quality Epitaxial Wurtzite Structured InAs Nanosheets Grown in MBE.

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN

Dimension Engineering of Narrow Bandgap Semiconductor InAs Nanostructures in Wafer-Scale

Phosphorus-Controlled Nanoepitaxy in the Asymmetric Growth of GaAs-InP Core-Shell Bent Nanowires

Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy

Growth of Zinc Blende Gaas/Algaas Radial Heterostructure Nanowires by A Two-Temperature Process

Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 Nm.

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Structural Modulation of GaN Nanowires Grown in High-Density Plasma Environment

Growth of in As Nanowires with the Morphology and Crystal Structure Controlled by Carrier Gas Flow Rate

Influence of the group V element on the chemical potential and crystal structure of Au-catalyzed III-V nanowires