Abstract:The growth via chemical vapor deposition of decoupled graphene on crystalline Cu(111) films deposited on sapphire is introduced. The resulting graphene is lying atop a thin Cu2O layer and is charge neutral, low strained, and easy to transfer. Electrical transport measurements reveal excellent room temperature carrier mobilities, exceeding 105 cm2 V−1 s−1 upon encapsulation in hexagonal boron nitride, thus opening realistic pathways for high‐performance next‐generation applications. The growth of high‐quality graphene on flat and rigid templates, such as metal thin films on insulating wafers, is regarded as a key enabler for technologies based on 2D materials. In this work, the growth of decoupled graphene is introduced via non‐reducing low‐pressure chemical vapor deposition (LPCVD) on crystalline Cu(111) films deposited on sapphire. The resulting film is atomically flat, with no detectable cracks or ripples, and lies atop of a thin Cu2O layer, as confirmed by microscopy, diffraction, and spectroscopy analyses. Post‐growth treatment of the partially decoupled graphene enables full and uniform oxidation of the interface, greatly simplifying subsequent transfer processes, particularly dry‐pick up — a task that proves challenging when dealing with graphene directly synthesized on metallic Cu(111). Electrical transport measurements reveal high carrier mobility at room temperature, exceeding 104 cm2 V−1 s−1 on SiO2/Si and 105 cm2 V−1 s−1 upon encapsulation in hexagonal boron nitride (hBN). The demonstrated growth approach yields exceptional material quality, in line with micro‐mechanically exfoliated graphene flakes, and thus paves the way toward large‐scale production of pristine graphene suitable for high‐performance next‐generation applications.

Uniform Wafer-Scale Chemical Vapor Deposition of Graphene on Evaporated Cu (111) Film with Quality Comparable to Exfoliated Monolayer

Uniform wafer-scale synthesis of graphene on evaporated Cu (111) film with quality comparable to exfoliated monolayer

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Ultrafast Transition of Nonuniform Graphene to High-Quality Uniform Monolayer Films on Liquid Cu

Wafer-scale single-crystal monolayer graphene grown on sapphire substrate

Wafer-scale synthesis and transfer of monolayer graphene

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

A Novel Preparation Method for Uniform Large-Area Graphene Films on Ni@Cu Substrate

Decoupled High‐Mobility Graphene on Cu(111)/Sapphire via Chemical Vapor Deposition

Synthesis of High Quality Monolayer Graphene at Reduced Temperature on Hydrogen-Enriched Evaporated Copper (111) Films.

Low-Temperature Chemical Vapor Deposition Growth Of Graphene From Toluene On Electropolished Copper Foils

Growth Kinetics and Defects of CVD Graphene on Cu

Growth and carrier transport performance of single-crystalline monolayer graphene over electrodeposited copper film on quartz glass

Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/Siox by Chemical Vapor Deposition

Transfer-Free Quasi-Suspended Graphene Grown on a Si Wafer.

Synthesis of High-Quality Monolayer and Bilayer Graphene on Copper Using Chemical Vapor Deposition

Towards Wafer-Size Strictly Monolayer Graphene on Copper Via Cyclic Atmospheric Chemical Vapor Deposition

Adlayer‐Free Large‐Area Single Crystal Graphene Grown on a Cu(111) Foil

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Synthesis of Homogenous Bilayer Graphene on Industrial Cu Foil