Erosion of Tungsten-Doped Amorphous Carbon Films in Oxygen Plasma

P. Wang,W. Jacob,M. Balden,T. Hoeschen,A. Manhard
DOI: https://doi.org/10.1016/j.jnucmat.2011.09.023
IF: 3.555
2011-01-01
Journal of Nuclear Materials
Abstract:Tungsten-doped amorphous carbon films with 0–9at.% W concentration were produced by magnetron sputtering and eroded in oxygen plasmas applying different bias voltages and substrate temperatures. The partial C and W erosion rates were determined from the C and W areal density changes measured by Rutherford backscattering spectrometry (RBS). The initial C removal rate increases with increasing ion energy and temperature and decreases with increasing W concentration. For W-doped films the erosion rate decreases with increasing plasma exposure duration. At low bias voltages the erosion process stops after W accumulation at the surface, which protects the carbon underneath from further erosion. RBS and X-ray photoelectron spectroscopy suggest that the W-rich layer at the surface is carbon free and consists of porous WO3. Biasing to 200V leads to removal of W by physical sputtering and, therefore, inhibits the formation of the protecting W oxide layer and the C erosion proceeds.
What problem does this paper attempt to address?