Abstract:The microbolometer is the cornerstone device for imaging in the long-wavelength infrared range (LWIR) at room temperature. The state-of-the-art commercial microbolometers usually have a large thermal time constant (TTC) of over 10 ms, limited by their substantial device heat capacity. Moreover, the minimal pixel size of state-of-the-art bolometer is around 10 μm by 10 μm to ensure sufficient power absorption per pixel. Here, we demonstrate an ultrafast silicon nanomembrane microbolometer with a small heat capacity of around 1.9 × 10–11J/K, which allows for its operation at a speed of over 10 kHz, corresponding to a TTC of less than 16 μs. Moreover, a compact diabolo antenna is leveraged for efficient LWIR light absorption, enabling the downscaling of the active area size to 6.2 μm by 6.2 μm. Because of the complementary metal oxide semiconductor (CMOS)-compatible fabrication processes, our demonstration here may lead to a future high-resolution and high-speed LWIR imaging solution.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.nanolett.1c02972.Methods including simulation, fabrication, and measurement details; figures showing the fabrication flowchart, power and polarization dependence of the photoresponse, and supplementary optical and thermal simulation results of the microbolometer device; notes showing the details of the thermal speed calculation (PDF)This article has not yet been cited by other publications.

A Low-Cost Infrared Absorbing Structure for an Uncooled Infrared Detector in A Standard Cmos Process

A Low-Cost Uncooled Infrared Microbolometer by CMOS Process

A Double-Sacrificial-Layer Uncooled Infrared Microbolometer in A Standard Cmos Process

A Low-Cost Uncooled Infrared Aluminum Microbolometer in A Standard Cmos Technology

An Uncooled Infrared Microbolometer Array for Low-Cost Applications

Low-Cost Microbolometer Type Infrared Detectors

A double-layer uncooled thermistor infrared detector based on standard CMOS technology

Study on new structure uncooled a-Si microbolometer for infrared detection

A High Linearity Readout Integrated Circuit for Uncooled IR Detector

The Design and Fabrication of a Tungsten Microbolometer Array Integrated Chip in a Standard CMOS Process

Ultrafast Silicon Nanomembrane Microbolometer for Long-Wavelength Infrared Light Detection

An Ultra Low Noise Readout Integrated Circuit for Uncooled Microbolometers

An Infrared Readout Circuit with On-chip Compensation

Uncooled Infrared Detection Using CMOS Thermomechanical Capacitive Sensors

Microbolometer with a Salicided Polysilicon Thermistor in CMOS Technology.

Novel low area CMOS readout circuit for uncooled microbolometers with low noise

Fabrication and Performance of a Novel CMOS Infrared Emitter

Advanced design of microbolometers for uncooled infrared detectors

A Novel Opto-Mechanical Uncooled Infrared Detector

A Uncooled A-Si Infrared Detector with Novel Thermal Isolation Method.

An Uncooled Infrared Readout Circuit with Substrate Temperature Compensation