Abstract:In this paper, the characteristics of oxygen vacancies (VO) and gallium vacancies (VGa) in β-Ga2O3 are studied using density functional theory. The performed relaxation analysis indicates that the relaxation of VGaII increases its octahedral volume. Compared with the tetrahedron, the Ga atom of the octahedron surrounding VO is more stable. The formation energy results suggest also that VGa 0 is expected to be most favorable in p-type β-Ga2O3, while VGa -3 is preferred in the n-type. The −3 charge state acts as a compensating acceptor, which reduces electron conductivity. VO+2, which acts as the compensation donor center, can easily form in p-type β-Ga2O3, while the VO0 forms readily in n-type β-Ga2O3. VGa at high density can exist in β-Ga2O3 in an oxygen-rich environment, while VO can exist under oxygen-poor conditions. The defect charge-state transition level reveals that VGa is a deep acceptor and VO is a deep donor. For VGa, the transition levels ε (0/-1), ε (-2/-1), and ε (-3/-2) can appear in the thermodynamic equilibrium system. However, for VOI and VOIII, which are used as negative-U centers, only the transition level ε (2+/0) can appear in thermodynamic equilibrium. Furthermore, the calculated bandgap properties indicate that VGa is capable of introducing ferromagnetism in β-Ga2O3, while VO cannot. VGa introduces both acceptor levels and donor levels within the bandgap, which compensate each other, and they, thus, determine the acceptor characteristics of the system. The appearance of VO-introduced donor levels into the bandgap increases the overall electron concentration of the system. A Bader charge analysis shows that the vacancy defect can have a strong effect on the charge distribution of the crystal and alter the electronic characteristics of the crystal. The research results in this paper show that the electronic and magnetic properties of β-Ga2O3 can be changed significantly by introducing different types of vacancy defects with different charge states during the preparation process of the device. This can be done to meet specific performance requirements of a commercial electronic component.

Defects at Ge:Geo2 and Ge:Meox Interfaces

Impact of Oxide Defects on Band Offset at Geo2/Ge Interface

Atomic Bonding and Disorder at Ge:GeO2 Interfaces

Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.

First principle thermodynamic study of oxygen vacancy at metal/oxide interface

First principles study of band line up at defective metal-oxide interface: oxygen point defects at Al/SiO_2 interface

Oxygen Vacancy Migration in Ca 2 Ga 2+ x Ge 1– x O 7–0.5 x Melilite

The structure and electronic properties of Ge/SrZrO3

Oxygen Vacancy Migration in Ca2Ga2+xGe1–xO7–0.5x Melilite

Stability of Ge-related point defects and complexes in Ge-doped SiO_2

Density-functional theory molecular dynamics simulations of a-HfO2/Ge(100)(2 × 1) and a-ZrO2/Ge(100)(2 × 1) interface passivation

Ge-substitutional defects and the r3xr3 <--> 3x3 transition in alpha--SnGe(111)

Abnormal behavior of preferred formation of the cationic vacancies from the interior in a γ-GeSe monolayer with the stereo-chemical antibonding lone-pair state

A Unified Mid-Gap Defect Model for Amorphous GeTe Phase Change Material

The effect of vacancy defects on the electronic properties of β-Ga2O3

First-principles electronic-structure calculation of dangling bonds at Si/SiO$_2$ and Ge/GeO$_2$ interfaces

Abnormal behavior of preferred formation of cationic vacancy from the interior in γ-GeSe monolayer with the stereo-chemical antibonding lone-pair state

Band Alignment Between Gete and Sio2/Metals for Characterization of Junctions in Nonvolatile Resistance Change Elements

Interface Properties of Ge3n4/Ge(111): Ab Initio and X-Ray Photoemission Spectroscopy Study

Atomic-scale measurement of localized dislocation phonons at Si/Ge interface

Vacancies and oxidation of 2D group-IV monochalcogenides