Potential Sputtering on SiO2 and Au Induced by Highly Charged Ions Impact

Rui Cheng,Tieshan Wang,Yongtao Zhao,Yuyu Wang,Haibo Peng,Guoqing Xiao

DOI: https://doi.org/10.1088/1742-6596/488/13/132039

2014-01-01

Journal of Physics Conference Series

Abstract:Potential sputtering was studied using highly charged ions impacting on SiO2 and Au surface. A threshold effect for potential sputtering was found for gold.

What problem does this paper attempt to address?

Study of Channeling Effect by Impact of Highly Charged Ions on Crystal Surface of Si(110)

Peng Hai-Bo,Wang Tie-Shan,Han Yun-Cheng,Ding Da-Jie,Xu He,Cheng Rui,Zhao Yong-Tao,Wang Yu-Yu

DOI: https://doi.org/10.3321/j.issn:1000-3290.2008.04.027

IF: 0.906

2008-01-01

Acta Physica Sinica

Abstract:The (110) crystal surface of Si was bombarded by slow highly charged ions (Pbq+, Arq+) and the secondary particle emission was measured for different incident angles. Comparing the relationship between the sputtering yield and the incident angle, channeling effect was suggested. The channeling effect in interaction of highly charged ions with Si causes the sputtering yield to depend strongly on kinetic energy. Highly charged ions can enhance sputtering yield at smaller incident angles. At incident angles from 40 degrees to 50 degrees, the higher the potential energy of highly charged ion, the greater the sputtering yield.
Potential Sputtering by Highly Charged Ion Bombardment on Au Surface

R. Cheng,H. B. Peng,S. J. Liu,Y. C. Han,P. F. Zong,Y. T. Zhao,T. S. Wang

DOI: https://doi.org/10.1016/j.nuclphysa.2010.01.140

IF: 1.558

2010-01-01

Nuclear Physics A

Abstract:The sputtered particle yields produced by Pbq+(q=4−36) with constant kinetic energy bombardment on Au surface were measured. The sputtering could be separated to two parts: no potential sputtering is observed when q<24 (Epot=9.6keV) and the sputtering yield increases with Epot1.2 for the higher charge states of q⩾24. The potential sputtering is mainly contributed by the relaxation of electronic excitations on target surface produced by the potential energy transfer from projectile to target atoms.
Studies on Surface Damage Induced by Ion Bombardment

YG Wang,YX Kang,WJ Zhao,S Yan,PJ Zhai,XW Tang

DOI: https://doi.org/10.1063/1.366836

IF: 2.877

1998-01-01

Journal of Applied Physics

Abstract:Highly oriented pyrolitic graphite (HOPG) samples were bombarded by different kinds of ions, including H, He, B, C, and Au, at an energy range from 530 keV to 4.5 MeV. After bombardment, the sample surfaces were observed with scanning tunneling microscopy. All these experimental results show that the energetic ions could cause observable protrusionlike damage on the HOPG surfaces. The ratio of the areal density of protrusion to the ion dose increases with the nuclear energy loss and is in the range of 10−5 to 2. The possible mechanism of these phenomena is also discussed.
Role of Carrier Concentration in Swift Heavy Ion Irradiation Induced Surface Modifications

Sushant Gupta,Fouran Singh,Indra Sulania,B. Das

DOI: https://doi.org/10.1016/j.susc.2017.06.006

2016-12-13

Abstract:Highly conducting $SnO_{2}$ thin films were prepared by chemical spray pyrolysis technique. One set of as-deposited films were annealed in air for 2 h at 850$^{o}$C. These as-deposited and annealed films were irradiated using $Au^{9+}$ ions with energy of 120 MeV at different fluences ranging from $1\times10^{11}$ to $3\times10^{13}$ $ions/cm^{2}$. Electrical measurement shows that as-deposited $SnO_{2}$ films are in conducting state with n = $3.164 \times 10^{20}$ $cm^{-3}$ and annealed $SnO_{2}$ films are in insulating state. The amorphized latent tracks are created only above a certain threshold value of $S_{e}$, which directly depends on the free electron concentration (n). The electronic energy loss ($S_{e}$) of 120 MeV $Au^{9+}$ ions in $SnO_{2}$ is greater than the threshold energy loss ($S_{eth}$) required for the latent track formation in annealed $SnO_{2}$ thin film, but is less than $S_{eth}$ required for as-deposited $SnO_{2}$ film. Therefore, the latent tracks are formed in the annealed $SnO_{2}$ film and not in the as-deposited $SnO_{2}$ film. Thermal spike model is used for the calculation of threshold energy loss and radius of melted zone. The possible mechanism of the structural changes and surface microstructure evolutions is briefly discussed in the light of ion's energy relaxation processes and target's conductivity. The atomic force microscopy (AFM) study of films shows that the morphologies of irradiated films are linked with carrier concentration of target materials.

Materials Science
Charge‐State‐Enhanced Ion Sputtering of Metallic Gold Nanoislands

Gabriel L. Szabo,Benedykt R. Jany,Helmut Muckenhuber,Anna Niggas,Markus Lehner,Arkadiusz Janas,Paul S. Szabo,Ziyang Gan,Antony George,Andrey Turchanin,Franciszek Krok,Richard A. Wilhelm

DOI: https://doi.org/10.1002/smll.202207263

IF: 13.3

2023-03-24

Small

Abstract:The experimental results show charge‐state‐dependent ion erosion of metallic gold nanoislands, challenging the previous paradigm that metals in general are not susceptible to potential sputtering. Geometric energy confinement in nanometer‐sized gold islands weakly bound to a substrate, however, enables coupling of the ion‐induced electronic excitations to lattice motion and subsequent shaping of metallic quantum dots. Experimental results on the charge‐state‐dependent sputtering of metallic gold nanoislands are presented. Irradiations with slow highly charged ions of metallic targets were previously considered to show no charge state dependent effects on ion‐induced material modification, since these materials possess enough free electrons to dissipate the deposited potential energy before electron‐phonon coupling can set in. By reducing the size of the target material down to the nanometer regime and thus enabling a geometric energy confinement, a possibility is demonstrated to erode metallic surfaces by charge state related effects in contrast to regular kinetic sputtering.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Sputtering Induced by Highly Charged 208pbq+ Bombardment on Al Surface

T. S. Wang,R. Cheng,H. B. Peng,Y. C. Han,Y. Xiang,Y. T. Zhao,G. Q. Xiao

DOI: https://doi.org/10.1016/j.surfcoat.2009.02.028

IF: 4.865

2009-01-01

Surface and Coatings Technology

Abstract:Highly charged ions (HCls) carrying high Coulomb potential energy (E-p) could cause great changes in the physical and chemical properties of material surface when they bombard on the solid surface. In our work, the secondary ion yield dependence on highly charged Pbq+ (q = 4-36) bombardment on Al surface has been investigated. Aluminum films (99.99%) covered with a natural oxide film was chosen as our target and the kinetic energy (E-k) was varied between 80 keV and 400 keV. The yield with different incident angles could be described well by the equation developed by us. The equation consists of two parts due to the kinetic sputtering and potential sputtering. The physical interpretations of the coefficients in the said equation are discussed. Also the results on the kinetic sputtering produced by the nuclear energy loss on target Surface are presented. (C) 2009 Elsevier B.V. All rights reserved.
Study of ion sputtering on AlxSn100-x alloy system

Zhenxia Wang,Jiping Zhang,Jisheng Pan,Zhenlan Tao,Fuying Zhu,Huiming Zhang,Yuewu Zeng

1994-01-01

Abstract:Angular distributions and preferential sputtering for Sn and Al atoms ejected from the AlxSn100-x (x=90, 70, 50, 30, 10) alloy system bombarded perpendicularly by a 30KeV Ar+ ion beam has been studied with the collector technique and the RBS analysis. The beam current intensity was less than 14 ��A/cm2, the beam total dose 1.4��1018Ar/cm2 and the diameter of spot on the target was 3mm. The experimental results show that there are change of surface topography and local enrichment of elements on the samples after bombardment. All samples bombarded were examined carefully using a SEM/ S-570, A model considering the influence of surface topography and localized element enrichment on the atomic ejection was proposed, and the calculation results are quite satisfactory.
Threshold Kinetic Energy For Gold X-Ray Emission Induced By Highly Charged Ions

Yongtao Zhao,Guoqing Xiao,Xiang Zhang,Zhihu Yang,YanPing Zhang,Ximeng Chen,Hongqiang Zhang,Ying Cui,Jianxiong Shao,Xuhui Xu,Fuli Li

DOI: https://doi.org/10.1142/S0217979205031195

2005-01-01

International Journal of Modern Physics B

Abstract:The X-rays induced in the interaction of highly charged Argon ions with gold surface were investigated. We had altered the projectile kinetic energy from 150keV to about 400keV. The results show that, there is a threshold projectile kinetic energy for this excitation. Combining the colliding theory of classic electrodynamics with the concept of quantized orbits, we crudely give this threshold kinetic energy.
XPS Studies of Charging Effect Induced by X-ray Irradiation on Amorphous SiO2 Thin Films

Dai Peng Xing,Hui Zhong Zeng,Wen Xu Zhang,Wan Li Zhang

DOI: https://doi.org/10.1088/1757-899x/490/2/022079

2019-01-01

IOP Conference Series Materials Science and Engineering

Abstract:X-ray photoelectron spectroscopy has been used to investigate positive charge accumulation on amorphous SiO2 films induced by in situ X-ray irradiation. We found out two different kinds of samples. The charge accumulation at the surface affects the properties of films. Then, by examining the significant changes of chemical shift and FWHM value, the films show a character of saturation during the process and the results can trace to oxygen vacancies. From the results of loss measured before and after the irradiation, we can say that the performance of highly reflective coatings, especially the surface SiO2 thin films, will directly affect the gyro abilities.
Slow Highly Charged Ion O4+ Induced Electron Emission From Clean Solid Surfaces

Xu Zhong-Feng,Zhao Yng-Tao,Wang Yu-Yu,Zhao Di,Wang Jian-Guo,Li De-Hui,Qayyum Abdul,Li Fu-Li,Xiao Guo-Qing

IF: 2.944

2008-01-01

Chinese Physics C

Abstract:The. total electron emission yields following the interaction of slow highly charged ions (SHCI) O4+ with different material surfaces (W, Au, Si and SiO2) have been measured. It is found that the electron emission yield gamma increases proportionally with the projectile velocity v ranging from 5.36 x 10(5)m/s to 10.7 x 10(5)m/s. The total emission yield is dependent on the target materials, and it turns out to follow the relationship gamma(Au) > gamma(Si)> gamma(W). The result shows that the electron emission yields are mainly determined by the electron stopping power of the target when the projectile potential energy is taken as a constant, which is in good agreement with the former studies.
Electron Emission Induced by the Interaction of Highly Charged Ions 207pbq+(24≤q≤36) with Solid Surface of Si(110)

YY Wang,YT Zhao,GQ Xiao,Y Fang,XA Zhang,TS Wang,SW Wang,HB Peng

DOI: https://doi.org/10.7498/aps.55.673

IF: 0.906

2006-01-01

Acta Physica Sinica

Abstract:The electron emission induced by highly charged ions 207Pbq+(24≤q≤36) interacting with Si(110) surface is reported. The result shows that the electron emission yield Y has a strong dependence on the projectile charge state q, incidence angle ψ and impact energy E. In fitting the experimental data we found a nearly 1/tanψ dependence of Y. Theoretical analysis shows that these processes are closely related to the process of potential electron emission based on the classical over_the_barrier model.
On the deformation of spherical Au nanoparticles by slow highly charged Xe ions

Xing Wang,Yitong Liu,Zhongfeng Xu

DOI: https://doi.org/10.1016/j.radphyschem.2022.110455

IF: 2.776

2022-01-01

Radiation Physics and Chemistry

Abstract:We report a detailed study on the deformation of spherical Au nanoparticles (NPs) irradiated by slow highly charged ions (SHCIs) at fluence of 2 × 1012 ions/cm2. Highly charged Xeq+ (q = 10–16) ions are attracted and selected from Electron Cyclotron Resonance Ion Source (ECRIS) at energy 0.55 MeV, 1.10 MeV, 1.65 MeV, 2.20 MeV, 2.75 MeV, 3.30 MeV and 3.85 MeV, respectively. The anisotropic deformation of NPs is determined by Scanning electron microscopy (SEM). It demonstrates that Au NPs have expanded in transverse geometry which is perpendicular to incident direction. Negative correlation is determined experimentally between aspect ratio and electronic stopping power of the incoming ions. In addition, the charge state effect is also investigated for deformation of NPs. Particularly, it is verified that highly charged Xeq+ ions are capable of deforming Au NPs essentially even at low energy regime. Given this perspective, we provide an innovative approach that SHCIs have great potential to modulate Au NPs collectively and feasibly.
Surface Plasmon-Assisted Excitation of Atomic Visible Light Spectral Lines in the Impact of Highly Charged Ions 126xeq+ on Solid Surfaces

XA Zhang,YT Zhao,FL Li,ZH Yang,GQ Xiao,WL Zhan

DOI: https://doi.org/10.1088/0256-307x/20/8/356

2003-01-01

Chinese Physics Letters

Abstract:We measured the visible light spectral lines of sputtering atoms from solid surfaces of Al, Ti, Ni, Ta and Au which are impacted by 150keV Xe-126(q+) (6 less than or equal to q less than or equal to 30). It is found that intensities of the light spectral lines are greatly and suddenly enhanced when the charge state of the ion is raised up to a critical value. If assuming that potential energy released from the incident ion due to capturing one electron is enough to excite a surface plasmon, we can estimate the critical charge states and obtain the results very well consistent with the measurements for the above-mentioned target materials. This means that a surface plasmon induced by one electron capture can enhance the excitation of atomic visible light spectral lines in the impact of a highly charged ion on a solid surface.
Study of the interaction of highly charged ions with surfaces

杨治虎,张艳萍,杜树斌,张小安,赵永涛,苏弘

DOI: https://doi.org/10.3969/j.issn.1000-0364.2003.04.003

2003-01-01

Abstract:The interaction between highly charged ions and surface is introduced, the mechanisms for emissions of electrons and photons are reviewed. We report some results of study of interaction between highly charged ions and surface on ECR in Institute of Modern Physics, Chinese Academy of Sciences.
Highly Charged Ion Beam-Induced Size Modification of Au Nanoparticles

Xu Zhong-Feng,Liu Li-Li,Zhao Yong-Tao,Chen Liang,Zhu Jian,Wang Yu-Yu,Xiao Guo-Qing

DOI: https://doi.org/10.7498/aps.58.3833

IF: 0.906

2009-01-01

Acta Physica Sinica

Abstract:Size modification of Au nanoparticles （NPs）, deposited on the Au-thick film surface, induced by highly charged ions （HCI） 40Ar12+ with fixed low dose （4.3×1011 ions/cm2） but various energyies （ranged from 146.64keV to 290.64keV） at room temperature （293.15K）, was investigated by atomic force microscopy （AFM） and transmission electron microscopy （TEM）. The selected 40Ar12+ beams were provided by electron cyclotron resonance source （ECRIS） of the National Laboratory of the Heavy Ion Research Facility in Lanzhou （HIRFL）. The morphological changes of NPs were interpreted by collisional mixing model, Ostwald ripening （OR） model and inverse Ostwald ripening （IOR） model of spherical NPs on a substrate. Theoretical and experimental studies both prove that there exist the critical energy E*, for low ion energy （EE*）, the mean diameter R of NPs increases with the increasing energy of incident ions E, while for higher projectile energy （E>E*）, it decreases with increasing energy.
Study of low energy sputtering of Pt(111) surface by molecular dynamics simulation

Yan Chao,Haifeng Lü,Zhang Chao,Zhang Qing-Yu,C Yan,HF Lu,C Zhang,QY Zhang

DOI: https://doi.org/10.7498/aps.55.1351

IF: 0.906

2006-01-01

Acta Physica Sinica

Abstract:Low energy sputtering of Pt (111) surface by noble metal atoms with the incident energy in the range of 0.1-200 eV has been studied by molecular dynamics simulation. The atomic interaction potential with embedded atom method (EAM) was used in the simulation. It was found that the sputtering threshold energy is independent of the mass of the incident atom in the case of normal impact on the Pt (111) surface. When the incident energy is lower than the threshold energy, the behavior of incident atom can be regarded as deposition process. When the incident energy is higher than the threshold energy, however, the sputtering yield increases with the increase of the incident energy.. For the incident energy of 200 eV, the sputtering yield induced by various incident atoms approaches I or even higher. The results mean that the atom with incident energy higher than 200 eV mainly plays the role of sputtering. The probability of angular distribution of the sputtered atoms and the sputtering pattern are similar to the sputtering results with higher incident energy. We found that the sputtering yield is a function of the reduced energy of incident atom and the mass ratio of incident atom to target atom when the incident energy is higher than the threshold energy, which is different from the linear cascade theory based on the binary collision model. We suggest a new physical mechanism for low energy sputtering, where the reflection of incident atom by target atom dominates the sputtering process of surface atoms.
Size Modification of Au Nanoparticles Induced by Slow Highly Charged Ions 40arq+ Irradiation

Zhongfeng Xu,Lili Liu,Yongtao Zhao,Liang Chen,Jian Zhu,Yuyu Wang,Guoqing Mao

DOI: https://doi.org/10.1016/j.jnoncrysol.2009.05.044

IF: 4.458

2009-01-01

Journal of Non-Crystalline Solids

Abstract:Size modification of Au nanoparticles (NPs), deposited on the Au-thick film surface and irradiated by slow highly charged ions (SHCI) 40Arq+ (3⩽q⩽12) with fixed low dose of 4.3×1011 ions/cm2 and various energy ranging from 74.64 to 290.64keV at room temperature (293.15K), was investigated by atomic force microscopy (AFM) and transmission electron microscopy (TEM). The effect of projectile kinetic energy on the modified size of NPs was explored by an appropriate choice of the fixed process parameters such as ion flux, irradiation temperature, incident angle, irradiation time, etc. The morphological changes of NPs were interpreted by models involving collisional mixing, Ostwald ripening (OR) and inverse Ostwald ripening (IOR) of spherical NPs on a substrate. A critical kinetic energy as well as a critical potential energy of the projectile in the Au NPs size modification process were observed.
Slow Highly Charged Ions Induced Electron Emission from Clean Si Surfaces

Wang Jian-Guo,Xu Zhong-Feng,Zhao Yong-Tao,Wang Yu-Yu,Li De-Hui,Zhao Di,Xiao Guo-Qing

DOI: https://doi.org/10.7498/aps.59.7803

IF: 0.906

2010-01-01

Acta Physica Sinica

Abstract:The electron emission yields from the interaction of slow highly charged ions (SHCI)He2 + ,O2 + and Ne2 + with clean Si surface are measured separately.It is found that electron emission yield γ increases proportionally to projectile kinetic energy EP/MP ranging from 0.75 keV/u to 10.5 keV/u (i.e.3.8 × 105 m/s≤vP≤ 1.42 × 106 m/s),and it is higher for heavy ions (O2 + and Ne2 + ) than for light ion (He2 + ).For O2 + and Ne2 + ,γ increases with ZP decreasing in our energy range,and it shows quite different from the result for higher projectile kinetic energy.After calculating the stopping power by using TRIM 2006,it is found that the fraction of secondary electrons induced by recoil atoms increases significantly at lower projectile energy,thereby leads to the differences in γ for heavy ions O2 + and Ne2 + between lower and higher projectile kinetic energy.
Size distribution of sputtered particles from Au nanoislands due to MeV self-ion bombardment

B. Satpati,J. Ghatak,P. V. Satyam,B. N. Dev

DOI: https://doi.org/10.1063/1.2058187

2005-03-17

Abstract:Nanoisland gold films, deposited by vacuum evaporation of gold onto Si(100) substrates, were irradiated with 1.5 MeV Au$^{2+}$ ions up to a fluence of $5\times 10^{14}$ ions cm$^{-2}$ and at incidence angles up to $60^{\circ}$ with respect to the surface normal. The sputtered particles were collected on carbon coated grids (catcher grid) during ion irradiation and were analyzed with transmission electron microscopy and Rutherford backscattering spectrometry. The average sputtered particle size and the areal coverage are determined from transmission electron microscopy measurements, whereas the amount of gold on the substrate is found by Rutherford backscattering spectrometry. The size distributions of larger particles (number of atoms/particle, $n$ $\ge$ 1,000) show an inverse power-law with an exponent of $\sim$ -1 in broad agreement with a molecular dynamics simulation of ion impact on cluster targets.

Materials Science
Nanopatterning of Si(110) Surface by Ion Sputtering: an Experimental and Simulation Study

L Ling,WQ Li,LJ Qi,M Lu,X Yang,CX Gu

DOI: https://doi.org/10.1103/physrevb.71.155329

2005-01-01

Abstract:Nanopatterning of Si(110) surface by the normal incident Ar+ ion sputtering has been conducted as a function of sample temperature (room temperature-800 degrees C) and ion energy (1-5 keV) with the ion flux of 20 mu A/cm(2). The surface morphology was characterized by an atomic force microscope. For ion energy of 1.5 keV, the sputtered surface morphology changes from a dim dot/hole pattern to a distinct dot one with the increasing temperature. On the other hand, at the temperature of 800 degrees C, the nanodot shape of the dot pattern evolves from being circular -> elliptical -> circular -> elliptical with the increasing ion energy in general. A dynamic continuum model is adopted to describe the experimental results, which includes both the Bradley-Harper (BH) mechanism good for the amorphous surface under ion sputtering and the Ehrlich-Schwoebel (ES) one for the crystalline surface. By adjusting the effective surface tension following its temperature- or ion energy-dependence relationship in the BH or ES mechanism-relevant regime, the processes of surface morphology evolution have been simulated, which agrees with the experimental ones.

Potential Sputtering on SiO2 and Au Induced by Highly Charged Ions Impact

Study of Channeling Effect by Impact of Highly Charged Ions on Crystal Surface of Si(110)

Potential Sputtering by Highly Charged Ion Bombardment on Au Surface

Studies on Surface Damage Induced by Ion Bombardment

Role of Carrier Concentration in Swift Heavy Ion Irradiation Induced Surface Modifications

Charge‐State‐Enhanced Ion Sputtering of Metallic Gold Nanoislands

Sputtering Induced by Highly Charged 208pbq+ Bombardment on Al Surface

Study of ion sputtering on AlxSn100-x alloy system

Threshold Kinetic Energy For Gold X-Ray Emission Induced By Highly Charged Ions

XPS Studies of Charging Effect Induced by X-ray Irradiation on Amorphous SiO2 Thin Films

Slow Highly Charged Ion O4+ Induced Electron Emission From Clean Solid Surfaces

Electron Emission Induced by the Interaction of Highly Charged Ions 207pbq+(24≤q≤36) with Solid Surface of Si(110)

On the deformation of spherical Au nanoparticles by slow highly charged Xe ions

Surface Plasmon-Assisted Excitation of Atomic Visible Light Spectral Lines in the Impact of Highly Charged Ions 126xeq+ on Solid Surfaces

Study of the interaction of highly charged ions with surfaces

Highly Charged Ion Beam-Induced Size Modification of Au Nanoparticles

Study of low energy sputtering of Pt(111) surface by molecular dynamics simulation

Size Modification of Au Nanoparticles Induced by Slow Highly Charged Ions 40arq+ Irradiation

Slow Highly Charged Ions Induced Electron Emission from Clean Si Surfaces

Size distribution of sputtered particles from Au nanoislands due to MeV self-ion bombardment

Nanopatterning of Si(110) Surface by Ion Sputtering: an Experimental and Simulation Study