P‐88: All‐Inorganic Quantum‐Dot Light‐Emitting Devices Prepared by Solution‐Process Route

zhi li,khan qasim,jing chen,wei lei,jiangyong pan,qing li,jun xia,yan tu
DOI: https://doi.org/10.1002/j.2168-0159.2014.tb00345.x
2014-01-01
SID Symposium Digest of Technical Papers
Abstract:We have fabricated all‐inorganic quantum‐dot light‐emitting devices(QDLED) with NiO as a hole transporting layer and TiO 2 as a inorganic electron transporting layer. P‐type NiO and n‐type TiO 2 charge‐transport layers were synthesized by sol‐gel method using spin‐coating technique. The thickness of TiO2 layer was optimized with different spin‐coating speed, and studied the luminescence characteristics of devices. Results indicated devices with 4000 rpm TiO 2 layer has lower turn voltage 4.2V and higher EL intensity.
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