Transport and Mechanical Properties of High- ZT Mg 2.08 Si 0.4− x Sn 0.6 Sb x Thermoelectric Materials

Peng Gao,Isil Berkun,Robert D. Schmidt,Matthew F. Luzenski,Xu Lu,Patricia Bordon Sarac,Eldon D. Case,Timothy P. Hogan
DOI: https://doi.org/10.1007/s11664-013-2865-8
IF: 2.1
2013-01-01
Journal of Electronic Materials
Abstract:Mg 2 (Si,Sn) compounds are promising candidate low-cost, lightweight, nontoxic thermoelectric materials made from abundant elements and are suited for power generation applications in the intermediate temperature range of 600 K to 800 K. Knowledge on the transport and mechanical properties of Mg 2 (Si,Sn) compounds is essential to the design of Mg 2 (Si,Sn)-based thermoelectric devices. In this work, such materials were synthesized using the molten-salt sealing method and were powder processed, followed by pulsed electric sintering densification. A set of Mg 2.08 Si 0.4− x Sn 0.6 Sb x (0 ≤ x ≤ 0.072) compounds were investigated, and a peak ZT of 1.50 was obtained at 716 K in Mg 2.08 Si 0.364 Sn 0.6 Sb 0.036 . The high ZT is attributed to a high electrical conductivity in these samples, possibly caused by a magnesium deficiency in the final product. The mechanical response of the material to stresses is a function of the elastic moduli. The temperature-dependent Young’s modulus, shear modulus, bulk modulus, Poisson’s ratio, acoustic wave speeds, and acoustic Debye temperature of the undoped Mg 2 (Si,Sn) compounds were measured using resonant ultrasound spectroscopy from 295 K to 603 K. In addition, the hardness and fracture toughness were measured at room temperature.
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