Abstract:Highly mismatched ZnO1-xSx:N alloy films with various x were deposited on c-plane sapphire substrates by a near-equilibrium method, metal-organic chemical vapor deposition. The sulfur concentration in the films could be tuned by changing the flow rate of H2S during the growth process. The films that could maintain single phase have an upper limit for x similar to 0.15, which is smaller than the x values obtained from other non-equilibrium-grown samples (x similar to 0.23). When x > 0.15, phases other than the wurtzite ZnO (W-ZnO) one appeared. Those phases were ascribed to the sulfur-diluted W-ZnO like phase, low x W-ZnO like phase, and high x W-ZnS like phase. The S contents in different phase has been determined by using Vegard's law and the X-ray photoelectron spectroscopy. Meanwhile, the compositional dependence of the bandgap energy in the ZnO1-xSx alloyed material has been investigated and studied comparing with other reported results. The dispersed bowing parameter b and the mechanism of the phase separation in samples grown by both the near-equilibrium method and the non-equilibrium one have also been discussed based on the difference of the atomic radius and electronegativity of the oxygen and sulfur atoms. Furthermore, the Raman and photoluminescence spectra have shown that the sulfur incorporation may suppress zinc interstitials related defects, while the oxygen vacancies related defects may be easily formed at the same time. These results indicate that ZnO1-xSx films could be beneficial to the realization of p-type doping in ZnO, although no obvious p-type characteristic has been attained in the work yet. (C) 2017 Elsevier B.V. All rights reserved.

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