ChemInform Abstract: Enhanced Thermoelectric Performance of N‐Type Bi2Se3 Doped with Cu.

Guolong Sun,Xiaoying Qin,Di Li,Jian Zhang,Baojin Ren,Tianhua Zou,Hongxing Xin,Silke Buehler Paschen,Xinlin Yan

DOI: https://doi.org/10.1002/chin.201529011

2015-01-01

ChemInform

Abstract:AbstractSingle phase samples of CuxBi2Se3 (x = 0‐0.020) are prepared by melting and vacuum hot pressing stoichiometric amounts of the elements (563 K, 300 MPa, 60 min).

What problem does this paper attempt to address?

Enhanced thermoelectric performance of n-type Bi 2 Se 3 doped with Cu

guolong sun,xiaoying qin,di li,jian zhang,baojin ren,tianhua zou,hongxing xin,s paschen,xinlin yan

DOI: https://doi.org/10.1016/j.jallcom.2015.03.124

IF: 6.2

2015-01-01

Journal of Alloys and Compounds

Abstract:•The electrical resistivity is decreased obviously through Cu-doping.•Cu-doping leads to a reduction by 30–50% in lattice thermal conductivity.•ZT=0.54 is obtained at 590K which is the largest value for Bi2Se3 reported so far.
ChemInform Abstract: Enhanced Thermoelectric Properties of Pb‐Doped BiCuSeO Ceramics.

Jin‐Le Lan,Yao‐Chun Liu,Bin Zhan,Yuan‐Hua Lin,Boping Zhang,Xun Yuan,Wenqing Zhang,Wei Xu,C.‐W. Nan

DOI: https://doi.org/10.1002/chin.201351007

2013-01-01

ChemInform

Abstract:AbstractBi1‐xPbxCuSeO (x = 0—0.08) samples are prepared by solid state reaction of Bi2O3, PbO, Cu, Bi, and Se (573 K for 6 h and 973 K for 10 h).
Thermoelectric Property Studies on Cu‐Doped N‐type CuxBi2Te2.7Se0.3 Nanocomposites

Wei-Shu Liu,Qinyong Zhang,Yucheng Lan,Shuo Chen,Xiao Yan,Qian Zhang,Hui Wang,Dezhi Wang,Gang Chen,Zhifeng Ren

DOI: https://doi.org/10.1002/aenm.201100149

IF: 27.8

2011-01-01

Advanced Energy Materials

Abstract:Combining high energy ball‐milling and hot‐pressing, significant enhancements of the thermoelectric figure‐of‐merit (ZT) have been reported for p‐type Bi0.4Sb1.6Te3 nanocomposites. However, applying the same technique to n‐type Bi2Te2.7Se0.3 showed no improvement on ZT values, due to the anisotropic nature of the thermoelectric properties of n‐type Bi2Te2.7Se0.3. Even though texturing was effective in improving peak ZT of Bi2Te2.7Se0.3 from 0.85 to 1.04, reproducibility from batch to batch remains unsatisfactory. Here, we show that good reproducibility can be achieved by introducing an optimal concentration of 0.01 copper (Cu) per Bi2Te2.7Se0.3 to make Cu0.01Bi2Te2.7Se0.3 samples. A peak ZT value of 0.99 was achieved in Cu0.01Bi2Te2.7Se0.3 samples without texturing. With texturing by re‐pressing, the peak ZT was increased to 1.06. Aging in air for over 5 months did not deteriorate but further improved the peak ZT to 1.10. The mechanism by which copper improves the reproducibility, enhances the carrier mobility, and reduces the lattice thermal conductivity is also discussed.
Structural features and thermoelectric performance of Sb- and Bi-doped Cu2SnSe3 compounds

Shu-Ping Deng,Xian-Yan Jiang,Li-Li Chen,Zi-Ye Zhang,Ning Qi,Yi-Chu Wu,Xin-Feng Tang,Zhi-Quan Chen

DOI: https://doi.org/10.1007/s12598-021-01724-1

IF: 6.318

2021-04-17

Rare Metals

Abstract:In this paper, a series of Sb-doped and Bi-doped Cu2Sn1-xMxSe3 samples (M = Sb, Bi) are prepared by vacuum melting combined with the spark plasma sintering process. The effects of different atomic doping amounts on their properties are discussed. Structural studies indicate that all obtained samples comprise a single Cu2SnSe3 phase. Sb and Bi atoms are experimentally demonstrated to be efficient cation dopants for increasing the transport performance. Compared with that doping on the cation site, Bi doping is much more efficient in increasing the electron concentration of the Cu2SnSe3 system. Ultimately, a high figure of merit of 0.36 is achieved in the Cu2Sn0.94Sb0.06Se3 sample at 773 K due to the enhanced power factor and lowered lattice thermal conductivity, which are 1.73 times higher than those of the pure sample. Our results provide an efficient approach to enhance thermoelectric performance via other doping atoms, which could also be applied to copper-based chalcogenide materials.

materials science, multidisciplinary,metallurgy & metallurgical engineering
Thermoelectric Properties of (Ag2se)1-X(bi2se3)x

Liu Hong-Xia,Li Wen,Zhang Xin-Yue,Li Juan,Pei Yan-Zhong

DOI: https://doi.org/10.15541/jim20180249

IF: 1.292

2019-01-01

Journal of Inorganic Materials

Abstract:Ternary chalcogenides I-V-VI2 compounds attract extensive attentions for thermoelectric applications due to their intrinsically low lattice thermal conductivity. AgBiSe2, as one of a few n-type semiconductors among these compounds, shows the potential to be a promising thermoelectric material. Therefore, this work focuses on its thermoelectric properties. According to the phase diagram of Ag2Se-Bi2Se3 system, the single phase region of (Ag2Se)(1-x)(Bi2Se3)(x) allows x to be varied in the range of 0.4 similar to 0.62. This large variation of x suggests a tunability of carrier concentration for this material. A broad carrier concentration of 1.0x10(19)similar to 5.7x10(19) cm(-3) for single phased (Ag2Se)(1-x)(Bi2Se3)(x) is obtained through a composition manipulation, which enables a comprehensive assessment on electronic transport properties based on a single parabolic band model with acoustic scattering. The highest carrier concentration obtained in this work, approaching to the theoretical optimal one, leads to a peak ZT of 0.5 at 700 K. This work offers a well understanding of its transport properties and underlying physical parameters determining the thermoelectric performance.
Enhanced Thermoelectric Properties and Electronic Structures of P-Type BiCu1−xAgxSeO Ceramics

Yazhou Sun,Cencen Zhang,Chengming Cao,Jianxin Fu,Liangming Peng

DOI: https://doi.org/10.1016/j.ceramint.2017.02.005

IF: 5.532

2017-01-01

Ceramics International

Abstract:The thermoelectric properties and electronic structures were investigated on p-type BiCu1-xAgxSeO (x=0, 0.02, 0.05, 0.08) ceramics prepared using a two-step solid state reaction followed by inductively hot pressing. All the samples consist of single BiCuSeO phase with lamella structure and no preferential orientation exists in the crystallites. Upon replacing Cu+ by Ag+, maximum values of electrical conductivity of 36.6Scm−1 and Seebeck coefficient of 350μVK−1 are obtained in BiCu0.98Ag0.02SeO and BiCu0.92Ag0.08SeO, respectively. Nevertheless, a maximum power factor of 3.67μWcm−1K−2 is achieved for BiCu0.95Ag0.05SeO at 750K owing to the moderate electrical conductivity and Seebeck coefficient. Simultaneously, this oxyselenide exhibits a thermal conductivity as low as 0.38 Wm−1K−1 and a high ZT value of 0.72 at 750K, which is nearly 1.85 times as large as that of the pristine BiCuSeO. The enhancement of thermoelectric performance is mainly attributed to the increased density of states near the Fermi level as indicated by the calculated results.
Isotropic Thermoelectric Performance of Layer-Structured n-Type Bi2Te2.7Se0.3 by Cu Doping

Xinyu Chen,Juan Li,Qing Shi,Yiyuan Chen,Houjun Gong,Yanping Huang,Liwei Lin,Ding Ren,Bo Liu,Ran Ang

DOI: https://doi.org/10.1021/acsami.1c19668

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:The lamellar structure of (Bi,Sb)(2)(Te,Se)(3) alloys makes it difficult to achieve isotropic thermoelectric properties in the directions along and perpendicular to the c-axis, especially for n-type samples. In this work, by introducing Cu in polycrystalline n-type CuxBi2Te2.7Se0.3 and applying the traditional synthesis process of high-energy ball milling and hot pressing, substantial enhancement of the thermoelectric figure of merit zT is obtained in both in-plane and out-of-plane directions. The intercalated Cu not only provides electron transport media for mobility improvement but also reduces the lattice thermal conductivity owing to the strain fluctuation. Typically, the van der Waals gap in the out-of-plane direction leads to relatively slower mobility and lower lattice thermal conductivity. Taking into account the same average density-of-state effective mass (m(avg)* similar to 1.5m(e)) predicted based on a single parabolic model, the obtained quality factor beta is comparable in both directions. As a result, a peak zT similar to 1.05 at 420 K and the average zT approaching to 1.0 in the temperature range 300-500 K are obtained in both directions for the Cu0.02Bi2Te2.7Se0.3 sample. The simple synthesis process and isotropic thermoelectric properties in this work make n-type Bi2Te3 more convenient for potential production and application.
Enhanced Thermoelectric Performance of Bi–Se Co-Doped Cu 1.8 S via Carrier Concentration Regulation and Multiscale Phonon Scattering

Ying-Hao Zhao,Zhi-Hang Shan,Wei Zhou,Rui Zhang,Jun Pei,He-Zhang Li,Jing-Feng Li,Zhen-Hua Ge,Yuan-Bing Wang,Bo-Ping Zhang

DOI: https://doi.org/10.1021/acsaem.2c00414

IF: 6.4

2022-04-01

ACS Applied Energy Materials

Abstract:Copper sulfides (Cu2–xS) have become potential thermoelectric (TE) materials because of their high element abundance, low toxicity, and high performance. A series of Cu1.8–2xBi2xS1–3xSe3x (0 ≤ x ≤ 0.03) bulks were fabricated using mechanical alloying and spark plasma sintering. The main Cu1.8S phase was obtained in all compositions of 0 ≤ x ≤ 0.03, and marginal Cu1.96S and Cu2S phases were detected at 0.02 ≤ x ≤ 0.03, which is attributed to the volatilization of sulfur and selenium. Benefiting from the introduced extra electronics by Bi3+ doping, the carrier concentration was optimized in 2.31×1021 cm–3. Multiscale defects introduced by Bi–Se co-doping, including secondary phases, micropores, and point defects (BiCu••, SeS×, and VS••), strongly scattered the phonons, leading to a drastically decreased thermal conductivity from 2.71 W m–1 K–1 for Cu1.8S at 773 K to 0.80 Wm–1 K–1 for Cu1.74Bi0.06S0.91Se0.09. A maximum ZT of 0.78 was achieved for Cu1.74Bi0.06S0.91Se0.09 at 773 K, which is 144% higher than that of Cu1.8S (0.32). The current stress test confirms that Bi doping could improve the stability of Cu1.8S by suppressing the Cu ion migration. Our work demonstrates that Bi–Se co-doping is an effective way to enhance the TE properties for Cu1.8S.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaem.2c00414.SPB model calculation of our work; method for the current stress test; calculation formulas for ZTeng and ηmax; temperature dependence of thermal properties of the Cu1.8–2xBi2xS1–3xSe3x (x = 0, 0.01, 0.02, 0.25, 0.03) samples; and repeatability test of electrical properties for the Cu1.74Bi0.06S0.91Se0.09 sample (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Enhanced Thermoelectric Performance of Bi–Se Co-Doped Cu1.8S Via Carrier Concentration Regulation and Multiscale Phonon Scattering

Ying-Hao Zhao,Zhi-Hang Shan,Wei Zhou,Rui Zhang,Jun Pei,He-Zhang Li,Jing-Feng Li,Zhen-Hua Ge,Yuan-Bing Wang,Bo-Ping Zhang

DOI: https://doi.org/10.1021/acsaem.2c00414

IF: 6.4

2022-01-01

ACS Applied Energy Materials

Abstract:Copper sulfides (Cu2-xS) have become potential thermoelectric (TE) materials because of their high element abundance, low toxicity, and high performance. A series of Cu1.8-2xBi2xS1-3xSe3x (0 <= x <= 0.03) bulks were fabricated using mechanical alloying and spark plasma sintering. The main Cu1.8S phase was obtained in all compositions of 0 <= x <= 0.03, and marginal Cu1.96S and Cu2S phases were detected at 0.02 <= x <= 0.03, which is attributed to the volatilization of sulfur and selenium. Benefiting from the introduced extra electronics by Bi3+ doping, the carrier concentration was optimized in 2.31x10(21) cm(-3). Multiscale defects introduced by Bi-Se co-doping, including secondary phases, micropores, and point defects (Bi-Cu(center dot center dot), Se-S(x), and V-S(center dot center dot)), strongly scattered the phonons, leading to a drastically decreased thermal conductivity from 2.71 W m(-1) K-1 for Cu1.8S at 773 K to 0.80 Wm(-1) K-1 for Cu1.74Bi0.06S0.91Se0.09. A maximum ZT of 0.78 was achieved for Cu1.74Bi0.06S0.91Se0.09 at 773 K, which is 144% higher than that of Cu1.8S (0.32). The current stress test confirms that Bi doping could improve the stability of Cu1.8S by suppressing the Cu ion migration. Our work demonstrates that Bi-Se co-doping is an effective way to enhance the TE properties for Cu1.8S.
Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds by Isovalent Bismuth Doping

Lijun Zhao,Mingyuan Wang,Jian Yang,Jiabin Hu,Yuan Zhu,Guiwu Liu,Shahid Hussain,Haicheng Shao,Shuangying Lei,Neng Wan,Zhongqi Shi,Guanjun Qiao

DOI: https://doi.org/10.1007/s10854-021-06403-6

2021-06-24

Abstract:Cu3SbSe4, featuring its earth-abundant, cheap, nontoxic and environmentally friendly constituent elements, can be considered as a promising intermediate temperature thermoelectric (TE) material. Herein, a series of p-type Bi-doped Cu3Sb1−xBixSe4 (x = 0–0.04) samples were fabricated through melting and hot pressing process, and the effects of isovalent Bi-doping on their TE properties were comparatively investigated by experimental and computational methods. TEM analysis indicates that Bi-doped samples consist of Cu3SbSe4 and Cu2−xSe impurity phases, which is in good agreement with the results of XRD, SEM and XPS. For Bi-doped samples, the reduced electrical resistivity (ρ) caused by the optimized carrier concentrations and enhanced Seebeck coefficient derived from the densities of states near the Fermi level give rise to a high power factor of ~ 1000 µWm−1 K−2 at 673 K for the Cu3Sb0.985Bi0.015Se4 sample. Additionally, the multiscale defects of Cu3SbSe4-based materials involving point defects, nanoprecipitates, amorphous phases and grain boundaries can strongly scatter phonons to depress lattice thermal conductivity (κlat), resulting in a low κlat of ~ 0.53 Wm−1 K−1 and thermal conductivity (κtot) of ~ 0.62 Wm−1 K−1 at 673 K for the Cu3Sb0.98Bi0.02Se4 sample. As a consequence, a maximum ZT value ~ 0.95 at 673 K is obtained for the Cu3Sb0.985Bi0.015Se4 sample, which is ~ 1.9 times higher than that of pristine Cu3SbSe4. This work shows that isovalent heavy element doping is an effective strategy to optimize thermoelectric properties of copper-based chalcogenides.
High Thermoelectric Performance in Cu-Doped Bi 2 Te 2.7 Se 0.33 Due to Cl Doping and Multiscale AgBiSe 2

Abubakar Yakubu Haruna,Yubo Luo,Zheng Ma,Wang Li,Haiqiang Liu,Xin Li,Qinghui Jiang,Junyou Yang

DOI: https://doi.org/10.1021/acsami.3c11449

IF: 9.5

2023-10-14

ACS Applied Materials & Interfaces

Abstract:The thermoelectric performance of n-type Bi(2)Te(3) needs further enhancement to match that of its p-type Bi(2)Te(3) counterpart and should be considered for competitive applications. Combining Cu/Cl and multiscale additives (AgBiSe(2)) presents a suitable route for such enhancement. This is evidence of the enhanced thermoelectric performance of Bi(1.995)Cu(0.005)Te(2.69)Se(0.33)Cl(0.03). Moreover, by incorporating 0.65 wt % AgBiSe(2) (ABS) into Bi(1.995)Cu(0.005)Te(2.69)Se(0.33)Cl(0.03), we...

materials science, multidisciplinary,nanoscience & nanotechnology
Optimizing thermoelectric properties of BiSe through Cu additive enhanced effective mass and phonon scattering

Xing-Chen Shen,Xiao Zhang,Bin Zhang,Guo-Yu Wang,Jian He,Xiao-Yuan Zhou

DOI: https://doi.org/10.1007/s12598-020-01491-5

IF: 6.318

2020-07-17

Rare Metals

Abstract:Known as a weak topological insulator (TI), BiSe structurally exhibits alternating stacks of quantum spin Hall bilayer ("Bi2") and three-dimensional TI layer ("Bi2Se3"). The low lattice thermal conductivity of BiSe due to the presence of Bi2 bilayers promises potentially good thermoelectric performance. Herein, the thermoelectric properties of nominal Bi1−xCuxSe samples were studied as the functions of the content of Cu additive and temperature. It is found that Cu additives in BiSe (1) profoundly affect the texture of densified polycrystalline samples by inclining the crystallographic c-axis parallel toward the pressure direction in the densification process, (2) increase considerably the effective mass and thus the Seebeck coefficient, and (3) yield point defects and Cu–Se secondary phases that effectively scatter heat-carrying phonons. As a result, the optimized electrical and thermal properties yield a thermoelectric figure of merit of zT ~ 0.29 in Bi1−xCuxSe (x = 0.03) sample at 467 K in parallel to the pressure direction and a zT ~ 0.20 at 468 K in the perpendicular direction.<h3 class="a-plus-plus">Graphic abstract</h3>

materials science, multidisciplinary,metallurgy & metallurgical engineering
Enhanced Thermoelectric Performance of N-Type Bi2Te2.7Se0.3 by Pyrite CoSe2 Addition

Anqi Zhao,Hui Liu,Tao Sun,Yudong Lang,Changchun Chen,Lin Pan,Yifeng Wang

DOI: https://doi.org/10.1016/j.jallcom.2024.173806

IF: 6.2

2024-01-01

Journal of Alloys and Compounds

Abstract:In this work, the thermoelectric (TE) performances of n-type Bi2Te2.7Se0.3 with the addition of pyrite CoSe2 were studied. The findings reveal an in-situ reaction between Bi2Te2.7Se0.3 and CoSe2 during the SPS process, resulting in the formation of a secondary phase, CoTe2, which refined the microstructure of Bi2Te2.7Se0.3. Consequently, the electrical conductivity and Seebeck coefficient of Bi2Te2.7Se0.3 were simultaneously optimized, attaining a higher power factor of 30.2 mu W cm- 1 K-2 at room temperature. Additionally, due to the reduced average sound velocity and phonon mean free path, the lattice thermal conductivity of Bi2Te2.7Se0.3 was suppressed by the incorporation of CoSe2. Furthermore, the bipolar thermal conductivity also experienced slight suppression at elevated temperatures. Ultimately, a substantial figure of merit of 0.85 was achieved at 423 K for n-type Bi2Te2.7Se0.3 with the addition of 3 mol% CoSe2.
Isotropic Thermoelectric Performance of Layer-Structured n-Type Bi 2 Te 2.7 Se 0.3 by Cu Doping

Xinyu Chen,Juan Li,Qing Shi,Yiyuan Chen,Houjun Gong,Yanping Huang,Liwei Lin,Ding Ren,Bo Liu,Ran Ang

DOI: https://doi.org/10.1021/acsami.1c19668

2021-11-30

Abstract:The lamellar structure of (Bi,Sb)2(Te,Se)3 alloys makes it difficult to achieve isotropic thermoelectric properties in the directions along and perpendicular to the c-axis, especially for n-type samples. In this work, by introducing Cu in polycrystalline n-type CuxBi2Te2.7Se0.3 and applying the traditional synthesis process of high-energy ball milling and hot pressing, substantial enhancement of the thermoelectric figure of merit zT is obtained in both in-plane and out-of-plane directions. The intercalated Cu not only provides electron transport media for mobility improvement but also reduces the lattice thermal conductivity owing to the strain fluctuation. Typically, the van der Waals gap in the out-of-plane direction leads to relatively slower mobility and lower lattice thermal conductivity. Taking into account the same average density-of-state effective mass (mavg* ∼ 1.5me) predicted based on a single parabolic model, the obtained quality factor β is comparable in both directions. As a result, a peak zT ∼ 1.05 at 420 K and the average zT approaching to 1.0 in the temperature range 300-500 K are obtained in both directions for the Cu0. 02Bi2Te2.7Se0.3 sample. The simple synthesis process and isotropic thermoelectric properties in this work make n-type Bi2Te3 more convenient for potential production and application.

materials science, multidisciplinary,nanoscience & nanotechnology
Thermoelectric properties of Mn doped BiCuSeO

Sayan Das,Suneesh Meledath Valiyaveettil,Kuei-Hsien Chen,Satyam Suwas,Ramesh Chandra Mallik

DOI: https://doi.org/10.1088/2053-1591/aaf710

IF: 2.025

2019-05-08

Materials Research Express

Abstract:BiCuSeO is a promising thermoelectric material having earth-abundant non-toxic constituents and favourable thermoelectric properties like ultra-low thermal conductivity. In this study, Mn+2 has been introduced at the Bi+3 site to increase hole concentration as well as Seebeck coefficient, through aliovalent doping and magnetic impurity incorporation respectively. Samples were prepared through two-step solid state synthesis with the composition Bi1-xMnxCuSeO (x = 0.0, 0.04, 0.06, 0.08, 0.10 and 0.12). X-ray diffraction patterns confirmed the tetragonal (space group: P4/nmm) crystal structure of BiCuSeO as well as phase purity of the samples. The Seebeck coefficient and electrical resistivity had a decreasing trend with increasing doping fraction owing to the generation of charge carriers. The samples with x = 0.04 and 0.06 showed temperature independent Seebeck coefficient above 523 K, which is a signature of small polaron hopping. While the Seebeck coefficient of the samples with x = 0.08, 0.10 and 0.12 increased above 523 K due to the combination of localized and extended states. The thermal conductivity was dominated by the lattice part of the thermal conductivity. As a result of moderate Seebeck coefficient and low electrical resistivity, the highest power factor of 0.284 mW m−1-K2 was obtained for the Bi0.92Mn0.08CuSeO at 773 K, leading to a maximum zT of 0.4 at 773.

materials science, multidisciplinary
Enhanced Thermoelectric Properties in Bicuseo Oxyselenides Via Zn and S Dual-Site Substitution

Yazhou Sun,Cencen Zhang,Chengming Cao,Jianxin Fu,Liangming Peng

DOI: https://doi.org/10.1007/s11664-017-5579-5

IF: 2.1

2017-01-01

Journal of Electronic Materials

Abstract:We report on the effect of Zn and S dual-site substitution on the thermoelectric properties of Bi1−x Zn x CuSeO1−x S x (x = 0, 0.025, 0.05, 0.075) oxyselenides prepared by conventional two-step solid-state reaction followed by inductive hot-pressing sintering. BiCuSeO phase with lath-like microstructures was observed for all samples. Upon Zn and S dual-site substitution, the electrical conductivity at 750 K was improved from 28.9 S cm−1 for pure BiCuSeO to 43.3 S cm−1 for Bi0.975Zn0.025CuSeO0.975S0.025 with highest Seebeck coefficient of 360 μV K−1 for Bi0.95Zn0.05CuSeO0.95S0.05. A maximum power factor of 4.6 μW cm−1 K−2 was achieved for Bi0.95Zn0.05CuSeO0.95S0.05 at 750 K due to its moderate electrical conductivity and high Seebeck coefficient. As the enhanced power factor compensates for the slight increase in the total thermal conductivity, the dimensionless figure of merit ZT reached a maximum value of 0.68 for Bi0.95Zn0.05CuSeO0.95S0.05 at 750 K, approximately 1.7 times larger than that of pristine BiCuSeO.
Fast synthesis and thermoelectric properties of BixCu2−3xSe0.95Te0.05 (x = 0, 0.001, 0.002, 0.003, 0.004)

Xue Lisha,Wang Yuan,Zhu Shuangmei,Mao Qianhui,Jia Xiaopeng,Zhang Yuewen

DOI: https://doi.org/10.1007/s10854-022-09762-w

2023-01-01

Abstract:We have synthesized the quaternary copper selenide BixCu2−3xSe0.95Te0.05 compounds by high-pressure followed with ball milling method and investigated their thermoelectric properties. The crystal structure and element doping are characterized and verified by the X-ray diffraction, high-resolution transmission electron microscope and X-ray photoelectron spectroscopy. Compared with other samples, the samples with x = 0.001 and 0.002 have larger layered grain size and smaller grain boundary. This may lead to the reduction of resistivity in a wide temperature range, thus realizing the optimization of electronic characteristics. The dislocation-induced lattice strain fluctuations may cause the abrupt thermal conductivity, which is contrary to the previous results. Eventually, a peak value of zT = 1.03 at 873 K is obtained for Bi0.001Cu1.997Se0.95Te0.05 and Bi0.002Cu1.994Se0.95Te0.05.
Enhanced Thermoelectric Performance of BiCuSeO Via Dual-Doping in Both Bi and Cu Sites

Qiang Wen,Huichen Zhang,Feng Xu,Lizhe Liu,Zhihe Wang,Guodong Tang

DOI: https://doi.org/10.1016/j.jallcom.2017.04.031

IF: 6.2

2017-01-01

Journal of Alloys and Compounds

Abstract:We investigated the effects of dual-doping in both Bi and Cu sites on the thermoelectric performance of BiCuSeO. The electrical conductivity of Ba and Co dual-doped samples was largely enhanced compared to pristine BiCuSeO due to enhanced carrier concentration. Interestingly, Ba and Co dual-doped samples keep high Seebeck coefficient values as compared to Ba single doped sample, resulting in high power factor. While their thermal conductivities were significantly depressed by enhanced point defect scattering. These favorable factors lead to enhanced ZT of Ba and Co dual-doped samples as compared with Ba single doped sample, Co single doped sample and pristine BiCuSeO. ZT value of 0.082 at 350 K for Ba0.125Bi0.85Cu0.85Co0.15SeO was determined by nearly 32 times higher than that of pristine BiCuSeO. Moreover, this value is about five times higher than that of promising Ba0.125Bi0.875CuSeO. It reveals that dual-doping into both Cu and Bi sites is an effective way for optimizing thermoelectric properties of BiCuSeO. This study opens a new pathway for broadening and designing prospective thermoelectric materials. (C) 2017 Elsevier B.V. All rights reserved.
High Thermoelectric Performance of Bi 1− X K X CuSeO Prepared by Combustion Synthesis

Jin-Le Lan,Wenqiang Ma,Chengjie Deng,Guang-Kun Ren,Yuan-Hua Lin,Xiaoping Yang

DOI: https://doi.org/10.1007/s10853-017-1323-z

IF: 4.5

2017-01-01

Journal of Materials Science

Abstract:A series of K-doped Bi1−x K x CuSeO (0 ≤ x ≤ 0.10) compounds were prepared by combustion synthesis combined with spark plasma sintering method. Phase composition and microstructure analysis indicate almost single BiCuSeO phase in low doping level, while phase separation appears in heavy doping level. The thermoelectric properties of the Bi1−x K x CuSeO compounds have been measured in the temperature range of 323–823 K. The electrical conductivity is greatly enhanced by almost three times from 8.70 to 26.2 S/cm at 323 K by the substitution of Bi with K due to the large decrease of the activation energy. The overall thermal conductivity decreases significantly due to the strong point defect scattering by K doping and possibly enhanced interface scattering on the secondary phase. The maximum ZT reaches 0.6 at 823 K for the sample of x = 0.02, which is about 50% higher than that of the pristine sample. Our work offers a fast and more efficient approach for the fabrication of BiCuSeO-based materials.
Enhanced Thermoelectric Performance of Cu2Se/Bi0.4Sb1.6Te3 Nanocomposites at Elevated Temperatures

Y. Y. Li,X. Y. Qin,D. Li,J. Zhang,C. Li,Y. F. Liu,C. J. Song,H. X. Xin,H. F. Guo

DOI: https://doi.org/10.1063/1.4941757

IF: 4

2016-01-01

Applied Physics Letters

Abstract:Bi2Te3-based thermoelectric materials with large thermoelectric figure of merit, ZT, at elevated temperatures are advantageous in power generation by using the low-grade waste heat. Here, we show that incorporation of small proportion (0.3 vol. %) of nanophase Cu2Se into BiSbTe matrix causes an enhanced high-temperature thermopower due to elevated energy filtering of carriers and inhibition of minority transport besides enhanced phonon blocking from scattering at interfaces, which concurrently result in an ∼20% increase in the power factor and an ∼60% reduction in the lattice thermal conductivity at 488 K. As a result, ZT = 1.6 is achieved at 488 K in the composite system with 0.3 vol. % of Cu2Se. Significantly, its ZT is larger than unit in broad high-temperature range (e.g., ZT = 1.3 at 400 K and ZT = 1.6 at 488 K), which makes this material to be attractive for applications in energy harvesting from the low-grade waste heat.

ChemInform Abstract: Enhanced Thermoelectric Performance of N‐Type Bi2Se3 Doped with Cu.

Enhanced thermoelectric performance of n-type Bi 2 Se 3 doped with Cu

ChemInform Abstract: Enhanced Thermoelectric Properties of Pb‐Doped BiCuSeO Ceramics.

Thermoelectric Property Studies on Cu‐Doped N‐type CuxBi2Te2.7Se0.3 Nanocomposites

Structural features and thermoelectric performance of Sb- and Bi-doped Cu2SnSe3 compounds

Thermoelectric Properties of (Ag2se)1-X(bi2se3)x

Enhanced Thermoelectric Properties and Electronic Structures of P-Type BiCu1−xAgxSeO Ceramics

Isotropic Thermoelectric Performance of Layer-Structured n-Type Bi2Te2.7Se0.3 by Cu Doping

Enhanced Thermoelectric Performance of Bi–Se Co-Doped Cu 1.8 S via Carrier Concentration Regulation and Multiscale Phonon Scattering

Enhanced Thermoelectric Performance of Bi–Se Co-Doped Cu1.8S Via Carrier Concentration Regulation and Multiscale Phonon Scattering

Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds by Isovalent Bismuth Doping

High Thermoelectric Performance in Cu-Doped Bi 2 Te 2.7 Se 0.33 Due to Cl Doping and Multiscale AgBiSe 2

Optimizing thermoelectric properties of BiSe through Cu additive enhanced effective mass and phonon scattering

Enhanced Thermoelectric Performance of N-Type Bi2Te2.7Se0.3 by Pyrite CoSe2 Addition

Isotropic Thermoelectric Performance of Layer-Structured n-Type Bi 2 Te 2.7 Se 0.3 by Cu Doping

Thermoelectric properties of Mn doped BiCuSeO

Enhanced Thermoelectric Properties in Bicuseo Oxyselenides Via Zn and S Dual-Site Substitution

Fast synthesis and thermoelectric properties of BixCu2−3xSe0.95Te0.05 (x = 0, 0.001, 0.002, 0.003, 0.004)

Enhanced Thermoelectric Performance of BiCuSeO Via Dual-Doping in Both Bi and Cu Sites

High Thermoelectric Performance of Bi 1− X K X CuSeO Prepared by Combustion Synthesis

Enhanced Thermoelectric Performance of Cu2Se/Bi0.4Sb1.6Te3 Nanocomposites at Elevated Temperatures