ChemInform Abstract: Enhanced Thermoelectric Properties of Pb‐Doped BiCuSeO Ceramics.

Jin‐Le Lan,Yao‐Chun Liu,Bin Zhan,Yuan‐Hua Lin,Boping Zhang,Xun Yuan,Wenqing Zhang,Wei Xu,C.‐W. Nan

DOI: https://doi.org/10.1002/chin.201351007

2013-01-01

ChemInform

Abstract:AbstractBi1‐xPbxCuSeO (x = 0—0.08) samples are prepared by solid state reaction of Bi2O3, PbO, Cu, Bi, and Se (573 K for 6 h and 973 K for 10 h).

What problem does this paper attempt to address?

Thermoelectric properties of Pb-doped BiCuSeO ceramics

Yaochun Liu,JinLe Lan,Bin Zhan,Junxuan Ding,Yong Liu,Yuanhua Lin,Boping Zhang,Cewen Nan

DOI: https://doi.org/10.1111/jace.12528

IF: 4.186

2013-01-01

Journal of the American Ceramic Society

Abstract:A high-performance thermoelectric BiCuSeO oxyselenides has been prepared by a simple fabrication approach. Phase composition and microstructure analysis indicate that the obtained ceramic samples are almost BiCuSeO phase with plate structure. Our results show that Pb-doped BiCuSeO bulks have good electrical conductivity, large Seebeck coefficient, and low thermal conductivity. A large power factor similar to 672/Wm/K2 at 573K can be observed in the BiCuSeO ceramic by the 10% Pb doping, and the dimensionless figure of merit (ZT) can reach 0.95 at 873K, which makes them promising candidates for thermoelectric applications.
Enhanced Thermoelectric Properties Of Pb-Doped Bicuseo Ceramics

Jin-Le Lan,Yao-Chun Liu,Bin Zhan,Yuan-Hua Lin,Boping Zhang,Xun Yuan,Wenqing Zhang,Wei Xu,C. -W. Nan

DOI: https://doi.org/10.1002/adma.201301675

IF: 29.4

2013-01-01

Advanced Materials

Abstract:A high-performance thermoelectric oxyselenide BiCuSeO ceramic with ZT > 1.1 at 823 K and higher average ZT value (ZTave ≈0.8) is obtained. The heavy doping element and nanostructures can effectively tune its electronic structure, hole concentration, and thermal conductivity, resulting in substantially enhanced mobility, power factor, and thus ZT value. This work provides a path to high-performance thermoelectric ceramics.
Effect of Ba and Pb Dual Doping on the Thermoelectric Properties of BiCuSeO Ceramics

Bo Feng,Guangqiang Li,Zhao Pan,Yanhui Hou,Chengcheng Zhang,Chengpeng Jiang,Feng Liang,Qiusheng Xiang,Yawei Li,Zhu He,Xi’an Fan

DOI: https://doi.org/10.1016/j.matlet.2018.01.074

IF: 3

2018-01-01

Materials Letters

Abstract:The layered oxyselenide BiCuSeO thermoelectric ceramics are attracting more and more attention due to intrinsically low thermal conductivity. In this work, Bi1−x−yBaxPbyCuSeO (x = y = 0, 0.01, 0.02, 0.04, 0.06, 0.08; x = 0, y = 0.08; x = 0.08, y = 0) bulks have been prepared by mechanical alloying (MA) and resistance pressing sintering (RPS) process, and the effects of Ba/Pb doping on the thermoelectric properties and Vickers hardness of p-type BiCuSeO ceramics have been investigated systematically. The results indicated that the substitution of Bi3+ by Ba2+/Pb2+ resulted in the significantly increase of electrical conductivity and power factor due to the introduction of the carriers into the conductive (Cu2Se2)2− layers as the result of the introduction of negative charge into the carrier-storaging (Bi2O2)2+ layers. Specifically, the room temperature electrical conductivity significantly increases from ∼8 Scm−1 for pristine BiCuSeO to ∼244 Scm−1 for Bi0.92Ba0.04Pb0.04CuSeO, and further up to ∼443 Scm−1 for Bi0.84Ba0.08Pb0.08CuSeO. The maximum power factor of 0.66 mWm−1K−2 and dimensionless figure of merit (ZT) value of 1.01 were obtained for the Bi0.88Ba0.06Pb0.06CuSeO at 873 K.
Enhanced Thermoelectric Performance of Zn-doped Oxyselenides: BiCu1−x Zn X SeO

G. -K. Ren,S. Butt,Y. -C. Liu,J. -L. Lan,Y. -H. Lin,C. -W. Nan,F. Fu,X. -F. Tang

DOI: https://doi.org/10.1002/pssa.201431347

2014-01-01

physica status solidi (a)

Abstract:High‐performance thermoelectric BiCuSeO ceramics have been prepared by solid state reaction combined with plasma activated sintering (PAS). Phase compositional and microstructural studies indicate composites having refined grain sizes (600–700 nm) with nanostructured ZnSe secondary phase. Our results reveal that Zn doping can lead to a large change in the carrier concentration (from 0.036 × 1020 cm−3 to 1.50 × 1020 cm−3), thus resulting in an increased electrical conductivity of three orders of magnitude at room temperature. The highest power factor of 4.21 µWcm−1K−2 at 873 K has been achieved by 10% Zn doping. On the other hand, the lattice thermal conductivity has been suppressed significantly due to refined grains, point defects and the nano‐inclusions of ZnSe phase. The dimensionless figure of merit (ZT) could reach up to 0.90 at 873 K in the BiCuSeO oxyselenides by the 10% Zn doping, which makes Zn‐doped BiCuSeO to be a promising candidate for thermoelectric applications.
Enhanced thermoelectric performance of BiCuSO by Pb doping and Se alloying

Mengxiang Yang,Manman Yang,Yiwen Zhang,Taichao Su,Hongyu Zhu

DOI: https://doi.org/10.1007/s10854-024-12985-8

2024-06-22

Journal of Materials Science Materials in Electronics

Abstract:Oxysulfides BiCuSO, with a natural superlattice structure, have extremely low thermal conductivity and high Seebeck coefficient. However, the thermoelectric performance of BiCuSO is restricted by its high electrical resistivity resulting from its low carrier concentration and Hall mobility. In this study, BiCuSO was rapidly prepared by one-step high pressure technique. The Pb doping at the Bi site of BiCuSO increases the carrier concentration and decreases the resistivity significantly, which results in an enhanced power factor of ~ 1.0 μWcm −1 K −2 at room temperature for Bi 0.97 Pb 0.03 CuSO. Meanwhile, substituting Se for S in BiCuSO not only improves the Hall mobility but also decreases the phonon thermal conductivity. Benefiting from the high power factor and low thermal conductivity induced by Pb doping and Se alloying, an enhanced ZT of ~ 0.17 at 673 K is obtained for the sample of Bi 0.97 Pb 0.03 CuS 0.55 Se 0.45 O.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Enhanced Thermoelectric Performance of La-doped BiCuSeO by Tuning Band Structure

Yaochun Liu,Jingxuan Ding,Ben Xu,Jinle Lan,Yuanhua Zheng,Bin Zhan,Boping Zhang,Yuanhua Lin,Cewen Nan

DOI: https://doi.org/10.1063/1.4922492

IF: 4

2015-01-01

Applied Physics Letters

Abstract:Bi1−xLaxCuSeO ceramic bulks have been prepared by the spark plasma sintering method. Our results indicate that La-doping can lead to an obvious change of the band structure evidenced by the absorption spectra and electric transportation behaviors (e.g., m* and Seebeck coefficient). The variation of band structure results in a great enhancement of carrier mobility caused by a decreased energy offset between the primary and secondary valence bands. A maximum ZT value of 0.74 can be obtained in 8% La-doped BiCuSeO sample at 923 K, which is 37% higher than that of the pure BiCuSeO bulk. Our results reveal that band engineering is an effective way to enhance the thermoelectric properties of BiCuSeO system.
Enhanced Thermoelectric Properties in Pb-doped BiCuSeO Oxyselenides Prepared by Ultrafast Synthesis

Guang-Kun Ren,Jin-le Lan,Sajid Butt,Kyle J. Ventura,Yuan-Hua Lin,Ce-Wen Nan

DOI: https://doi.org/10.1039/c5ra13191j

IF: 4.036

2015-01-01

RSC Advances

Abstract:SHS process reduces period from over 10 h to less than 1 min, and thermal analysis indicates the ignition temperature of BiCuSeO approaches the second lower melting point of the compound. ZT = 0.91 at 873 K for Bi0.96Pb0.04CuSeO was achieved.
Enhanced thermoelectric performance of BiCuSeO through composite structuring with Pb-and La-doped components

Xiaoqiong Zuo,Rong Zhang,Yonghong Chen,Zhibin Wang,Biyu Xu,Zhipeng Zheng,Guopeng Zhou,Yang Zhang,Kewei Wang,Sheng Yang,Yin Zhong,Yanhua Fan,Bo Feng

DOI: https://doi.org/10.1007/s10854-024-13587-0

2024-09-27

Journal of Materials Science Materials in Electronics

Abstract:BiCuSeO is the most promising mid-high temperature thermoelectric material for application. The thermoelectric properties of BiCuSeO are greatly improved by the composited structure based on Pb-doped samples with high carrier concentration and La-doped samples with high mobility. The synthesis of composited samples includes powder preparation by mechanical alloying and block forming by high-temperature spark plasma sintering. The experimental results indicate that the composited structure composed of Pb-doped high carrier sample and La-doped high- mobility sample can effectively enhance the power factor, for that reason the composited structure enables carriers to migrate through the high-mobility region, which is conducive to improving the electrical conductivity. The thermal conductivity is maintained at a low level because there exist a lot of two-phase interfaces in the modulation samples, which is conducive to the scattering of low-frequency phonons. Through the double coordination adjustment of electron and phonon, the highest ZT was increased to ~ 1.26 at 873 K.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Influence of Ag Doping on Thermoelectric Properties of BiCuSeO

Yao-chun Liu,Yuan-hua Zheng,Bin Zhan,Kai Chen,Sajid Butt,Boping Zhang,Yuan-hua Lin

DOI: https://doi.org/10.1016/j.jeurceramsoc.2014.09.015

IF: 5.7

2014-01-01

Journal of the European Ceramic Society

Abstract:The effect of Ag doping on the thermoelectric properties of p-type BiCuSeO ceramics from 300 to 873K has been investigated systematically. The electrical conductivity can be improved from 5.9 to 26.9Scm−1 at room temperature with Ag doping. The Seebeck coefficients of Bi1−xAgxCuSeO increase monotonically with temperature in all temperature range. The thermal conductivity can be suppressed significantly due to grain refinement and nanoinclusions. A maximum power factor of 320μWm−1K−2 was obtained at 873K. The combination of optimized power factor and low thermal conductivity resulted to a higher ZT value of 0.68 at 873K for Bi0.92Ag0.08CuSeO which is about 30% higher than that of the un-doped specimen.
Enhanced Thermoelectric and Mechanical Properties of BaO-Doped BiCuSeO δ Ceramics

Tian-Yu Yang,Lulu Huang,Jun Guo,Yixin Zhang,Jing Feng,Zhen-Hua Ge

DOI: https://doi.org/10.1021/acsaem.1c02720

IF: 6.4

2021-11-08

ACS Applied Energy Materials

Abstract:Layered BiCuSeOδ ceramics with earth-abundant and non-toxic elements can invariably be prospective thermoelectric (TE) materials attributed to their ultralow thermal conductivity with controllable electrical transport properties. In this study, BaO was used as the dopant of p-type to improve the TE properties of BiCuSeOδ ceramics prepared through solid-state reactions integrated with the technique of spark plasma sintering. The effects of Ba doping on the thermoelectric and mechanical properties of BiCuSeOδ ceramics were studied at great length. The result shows that the electrical conductivity was optimized to a value of 241 S cm–1 for the Bi0.825Ba0.175CuSeOδ sample due to the Ba2+-ion substitution on Bi3+ sites and the introduction of extra holes. The power factor of the Bi0.825Ba0.175CuSeOδ sample was highly enhanced to 765 μWm–1 K–2 at 323 K owing to its notably increased electrical conductivity. Simultaneously, the lattice thermal conductivity of the Bi0.825Ba0.175CuSeOδ sample decreased from 0.64 Wm–1 K–1 at 323 K to 0.41 Wm–1 K–1 at 873 K, which is ascribed to enhanced phonon scattering through the point defects and a secondary phase. Accordingly, a maximum ZT value of 0.85 was achieved for the Bi0.825Ba0.175CuSeOδ sample at 873 K, which is approximately 3 times higher than that obtained for the undoped BiCuSeOδ ceramic. The hardness of the BiCuSeOδ ceramics was measured for the first time by using the nanoindentation method.

materials science, multidisciplinary,chemistry, physical,energy & fuels
High Thermoelectric Performance of Bi 1− X K X CuSeO Prepared by Combustion Synthesis

Jin-Le Lan,Wenqiang Ma,Chengjie Deng,Guang-Kun Ren,Yuan-Hua Lin,Xiaoping Yang

DOI: https://doi.org/10.1007/s10853-017-1323-z

IF: 4.5

2017-01-01

Journal of Materials Science

Abstract:A series of K-doped Bi1−x K x CuSeO (0 ≤ x ≤ 0.10) compounds were prepared by combustion synthesis combined with spark plasma sintering method. Phase composition and microstructure analysis indicate almost single BiCuSeO phase in low doping level, while phase separation appears in heavy doping level. The thermoelectric properties of the Bi1−x K x CuSeO compounds have been measured in the temperature range of 323–823 K. The electrical conductivity is greatly enhanced by almost three times from 8.70 to 26.2 S/cm at 323 K by the substitution of Bi with K due to the large decrease of the activation energy. The overall thermal conductivity decreases significantly due to the strong point defect scattering by K doping and possibly enhanced interface scattering on the secondary phase. The maximum ZT reaches 0.6 at 823 K for the sample of x = 0.02, which is about 50% higher than that of the pristine sample. Our work offers a fast and more efficient approach for the fabrication of BiCuSeO-based materials.
Electrical and Thermal Transport Behavior in Zn-Doped BiCuSeO Oxyselenides

Guangkun Ren,Sajid Butt,Chengcheng Zeng,Yaochun Liu,Bin Zhan,Jinle Lan,Yuanhua Lin,Cewen Nan

DOI: https://doi.org/10.1007/s11664-014-3495-5

IF: 2.1

2014-01-01

Journal of Electronic Materials

Abstract:Oxide-based thermoelectric materials such as BiCuSeO have been researched for several years to optimize their thermoelectric performance. In this article, we present a series of Zn-doped BiCuSeO ceramics produced by fine processing. The results indicate that Zn doping can effectively increase the power factor through Cu vacancies along with a suppressed thermal conductivity through increased phonon scattering at ZnSe impurity phase. Consequently, a higher ZT value of 0.65 at 873 K is obtained for 10% Zn doping, being about three times larger than that of the pure sample.
Effect of NaF Doping on the Microstructure and Thermoelectric Performance of BiCuSeO Ceramics

Zhenbing Pei,Guangqi Xiang,Xin Sun,Zhuang Fu,Yanxin Qiao,Lei Wang,Songtao Dong,Jian Chen

DOI: https://doi.org/10.3390/coatings13122069

IF: 3.236

2023-12-13

Coatings

Abstract:The layered oxyselenide BiCuSeO has attracted significant attention due to its ability to demonstrate low thermal conductivity and a high Seebeck coefficient. This research project involved the synthesis of Bi1−xNaxCuSeO1−xFx (x = 0, 0.05, 0.10, 0.15, and 0.20) ceramics using high-energy ball milling and cold isostatic pressing techniques. A comprehensive investigation was conducted to examine the influence of co−doping NaF on the thermoelectric properties of BiCuSeO ceramics. The substitution of Bi3+ with Na+ introduces a substantial number of holes, resulting in a remarkable improvement in the electrical conductivity and power factor. The conductivity was significantly increased from 9.10 S cm−1 (BiCuSeO) to 94.5 S cm−1 (Bi0.85Na0.15CuSeO0.85F0.15) at 323 K. Additionally, at 823 K, the power factor of the Bi0.85Na0.15CuSeO0.85F0.15 sample reached 44.8 × 10−5 W/m K2. Furthermore, the Bi1−xNaxCuSeO1−xFx ceramics demonstrated a minimum thermal conductivity of 0.43 W m−1 K−1. Consequently, the Bi0.85Na0.15CuSeO0.85F0.15 sample achieved a maximum ZT value of 0.78, which is 7.09 times higher than that of the pure BiCuSeO sample (0.11).

materials science, multidisciplinary,physics, applied, coatings & films
Enhanced Thermoelectric Properties of Cu2−δSe Nanopowder Dispersed Bi2Ba2Co2Oy Ceramics

Ruijuan Cao,Erying Li,Qiujun Hu,Zheng Zhu,Yan Zhang,Xinjian Li,Xing Hu,Hongzhang Song

DOI: https://doi.org/10.1007/s00339-018-2095-2

2018-01-01

Applied Physics A

Abstract:The Bi2Ba2Co2Oy ceramics dispersed with x wt% Cu2−δSe (x = 0.00, 0.25, 0.50, 0.75, 1.00, 1.25 and 1.50) nanopowders were synthesized by the solid-state reaction method and the effects of Cu2−δSe dispersion on the thermoelectric properties were investigated. The thinner and better aligned lamellar structures were observed in the Cu2−δSe dispersed Bi2Ba2Co2Oy samples, which resulted in the significant reducing of thermal conductivities due to the enhanced phonon scattering by the lamellar structures. At the same time, the electrical resistivity was reduced evidently by an appropriate amount of Cu2−δSe dispersion owing to its low electrical resistivity. As a result, all the Cu2−δSe dispersed samples exhibited higher figure of merit (ZT), indicating that Cu2−δSe dispersion is an effective method to raise the thermoelectric properties of Bi2Ba2Co2Oy ceramic. The maximum ZT value 0.21 was achieved at 873 K when the Cu2−δSe amount is 0.5 wt%, which is increased about 35% compared with the undispersed sample.
Synergistically optimized electron and phonon transport of p-type BiCuSeO oxyselenides via Pb dopant and Te composite

Wenxin Tang,Wenqiang Ma,Penglu Yu,Zhifang Zhou,Jinle Lan,Yuan-Hua Lin,Xiaoping Yang

DOI: https://doi.org/10.1016/j.mtphys.2022.100898

IF: 11.021

2022-01-01

Materials Today Physics

Abstract:Layer-structured BiCuSeO oxyselenides with intrinsic low lattice thermal conductivity, non-toxicity, non-pollution and outstanding thermal stability is regarded as a promising thermoelectric material, but its application is limited by the poor electrical conductivity. In this paper, Pb-doped BiCuSeO (Bi1-xPbxCuSeO) was fabricated via a fast preparation method combined self-propagating high-temperature synthesis (SHS) with spark plasma sintering (SPS). Although Pb doping could greatly improve the electrical conductivity of BiCuSeO, the thermal conductivity increased as well, and it limits the thermoelectric performance. To further optimize the electron and phonon transport properties, Te powders and Te nanowires were introduced in Bi0middot9Pb0middot1CuSeO by ball milling, respectively. As a result, the thermal conductivity largely decreased with a maintained electrical performance. Ultimately, a maximum ZT value of 1.0 at 873 K was achieved for the 5 vol% Te nanowire + Bi0middot9Pb0middot1CuSeO sample, which is about 2.5 times as large as that for pristine BiCuSeO. Our work paves an alternative strategy for tuning the thermoelectric performance of BiCuSeO through Bi site doping combined low-dimension nanocomposites.
Study on the Targeted Improvement Mechanism of the Carrier Concentration and Mobility of BiCuSeO Ceramics

Zhibin Wang,Hong Zhao,Xinyu Luo,Wenyuan Han,Hao Wang,Linghao Meng,Xinqi She,Anlong Quan,Yixin Peng,Guoji Cai,Yi Liu,Yong Tang,Bo Feng

DOI: https://doi.org/10.3390/mi14091757

IF: 3.4

2023-09-11

Micromachines

Abstract:BiCuSeO has great application prospects in thermoelectric power generation and thermoelectric catalysis, but it is limited by its lower thermoelectric performance. Herein, BiCuSeO bulk materials were prepared using a solid-phase reaction method and a ball-milling method combined with spark plasma sintering, and then the thermoelectric properties were improved by synergistically increasing carrier concentration and mobility. Al was adopted to dope into the BiCuSeO matrix, aiming to adjust the carrier mobility through energy band adjustment. The results show that Al doping would widen the bandgap and enhance the carrier mobility of BiCuSeO. After Al doping, the thermoelectric properties of the material are improved in the middle- and high-temperature range. Based on Al doping, Pb is adopted as the doping element to dope BiCuSeO to modify the carrier concentration. The results show that Al/Pb dual doping in the BiCuSeO matrix can increase the carrier concentration under the premise of increasing carrier mobility. Therefore, the electrical conductivity of BiCuSeO can be improved while maintaining a large Seebeck coefficient. The power factor of Al/Pb doping reached ~7.67 μWcm−1K−2 at 873 K. At the same time, the thermal conductivity of all doped samples within the test temperature range maintained a low level (<1.2 Wm−1K−1). Finally, the ZT value of the Al/Pb-doped BiCuSeO reached ~1.14 at 873 K, which is ~2.72 times that of the pure phase, and the thermoelectric properties of the matrix were effectively improved.

chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied
Complex Electronic Structure and Compositing Effect in High Performance Thermoelectric BiCuSeO.

Guang-Kun Ren,Shanyu Wang,Zhifang Zhou,Xin Li,Jiong Yang,Wenqing Zhang,Yuan-Hua Lin,Jihui Yang,Ce-Wen Nan

DOI: https://doi.org/10.1038/s41467-019-10476-7

IF: 16.6

2019-01-01

Nature Communications

Abstract:BiCuSeO oxyselenides are promising thermoelectric materials, yet further thermoelectric figure of merit ZT improvement is largely limited by the inferior electrical transport properties. The established literature on these materials shows only one power factor maximum upon carrier concentration optimization, which is typical for most thermoelectric semiconductors. Surprisingly, we found three power factor maxima when doping Bi with Pb. Based on our first-principles calculations, numerical modeling, and experimental investigation, we attribute the three maxima to the Fermi energy optimization, band convergence, and compositing effect due to in situ formed PbSe precipitates. Consequently, three ZT peaks of 0.9, 1.1, and 1.3 at 873 K are achieved for 4, 10, and 14 at.% Pb-doped samples, respectively, revealing the significance of complex electronic structure and multiple roles of Pb in BiCuSeO. The results establish an accurate band structure characterization for BiCuSeO and identify the role of band convergence and nanoprecipitation as the driving mechanism for high ZT.
Enhanced Thermoelectric Performance of BiCuSeO Composites with Nanoinclusion of Copper Selenides

Yaochun Liu,Yiming Zhou,Jinle Lan,Chengcheng Zeng,Yuanhua Zheng,Bin Zhan,Boping Zhang,Yuanhua Lin,Ce-Wen Nan

DOI: https://doi.org/10.1016/j.jallcom.2015.12.087

IF: 6.2

2016-01-01

Journal of Alloys and Compounds

Abstract:BiCuSeO oxyselenide is a promising oxide-based thermoelectric material in the moderate temperature range, but the low electrical conductivity inhibits its further application in the field of thermoelectric materials. In this paper, we report on the effects that composite structures have an enhancement to the electrical conductivity of BiCuSeO. Here, a series of two-phase nanocomposites comprising of BiCuSeO and Cu2Se have been synthesized by SPS. Images obtained via electron microscope reveal that the two constituents form the unique composites while retaining their individual morphological identities. Owing to the composite structure with a highly conductive nanoscale of copper selenides and sub-micrometer scale BiCuSeO, an enhancement to the thermoelectric performance is achieved. The ZT at 823 K is increased from 0.33 for pristine BiCuSeO to 0.44 by inserting 20 vol% Cu2Se. Our results state that the composite structure is an effective method to enhance the performance of BiCuSeO. (C) 2015 Elsevier B.V. All rights reserved.
Enhancement of thermoelectric performance of Cu 1.98 Se by Pb doping

Zheng Zhu,Yuewen Zhang,Hongzhang Song,Xin-Jian Li

DOI: https://doi.org/10.1007/s00339-018-2173-5

2018-01-01

Applied Physics A

Abstract:Non-stoichiometric Cu 2− x Se is considered as a potential “phonon liquid electronic crystal” thermoelectric material. Cu 1.98 Se has higher thermal conductivity than Cu 2 Se, but the power factor of Cu 1.98 Se is about twice that of Cu 2 Se. Its thermal conductivity could be further depressed by optimizing its thermal transport performance. In this work, lead-doped Cu 1.98− x Pb x /2 Se ( x = 0–0.03) nanopowders were synthesized using a hydrothermal method, and hot-pressed into bulk pellets to assess the effects of Pb doping on the thermoelectric properties of Cu 1.98 Se. The electrical resistivity and the Seebeck coefficients were increased by Pb doping. Ionization impurity scattering, together with decrease of hole concentration, appeared to decrease the electrical transport performance. The point defects and reduced carrier concentration together result in low thermal conductivity and lead to a high dimensionless figure of merit ( ZT ) value of 1.52 at 973 K for the nominal component Cu 1.95 Pb 0.015 Se sample.
Enhancement of low-temperature thermoelectric performance via Pb doping in Cu3SbSe4

Anand Pal,K. Shyam Prasad,K. Gurukrishna,Suraj Mangavati,P. Poornesh,Ashok Rao,Yin-Chun Chung,Y.K. Kuo

DOI: https://doi.org/10.1016/j.jpcs.2022.111197

IF: 4.383

2023-04-01

Journal of Physics and Chemistry of Solids

Abstract:We investigated the synthesis protocols of the pure and Pb-doped bulk polycrystalline Cu3Sb1-x Pb x Se4 (0 ≤ x ≤ 0.04) system and studied their crystallographic and thermoelectric properties intending to reach a high figure of merit (ZT). The solid-state reaction method under a 10−5 Torr vacuum was employed to synthesize the pristine and doped samples. The Rietveld analysis of room-temperature X-ray diffraction confirmed tetragonal structure with space group I 4 ‾ 2 m for all studied compositions. The electrical resistivity [ρ(T)] demonstrated a degenerate semiconducting behavior for pure as well as doped samples. The overall ρ(T) increased with increasing Pb content. The positive values of Seebeck coefficient [S(T)] data in the investigated temperature range for all the studied compositions revealed that holes played a major role in the conduction mechanism. The S(T) values rose with increased temperature, a characteristic of degenerate semiconductors. The temperature-dependent Seebeck coefficient data analysis revealed a narrow bandgap behavior for all studied samples. The analysis suggests that the electronic thermal conductivity only contributed up to 1% to the total thermal conductivity, and the remaining 99% was contributed by lattice thermal conductivity. The estimated ZT values showed as much as 20% enhancement at 380 K for a 1% doped sample, Cu3Sb0.99Pb0.01Se4. The thermoelectric compatibility factor decreased with doping, and a maximum value (1.14 V−1) was found for the pristine sample at 250 K.

physics, condensed matter,chemistry, multidisciplinary

ChemInform Abstract: Enhanced Thermoelectric Properties of Pb‐Doped BiCuSeO Ceramics.

Thermoelectric properties of Pb-doped BiCuSeO ceramics

Enhanced Thermoelectric Properties Of Pb-Doped Bicuseo Ceramics

Effect of Ba and Pb Dual Doping on the Thermoelectric Properties of BiCuSeO Ceramics

Enhanced Thermoelectric Performance of Zn-doped Oxyselenides: BiCu1−x Zn X SeO

Enhanced thermoelectric performance of BiCuSO by Pb doping and Se alloying

Enhanced Thermoelectric Performance of La-doped BiCuSeO by Tuning Band Structure

Enhanced Thermoelectric Properties in Pb-doped BiCuSeO Oxyselenides Prepared by Ultrafast Synthesis

Enhanced thermoelectric performance of BiCuSeO through composite structuring with Pb-and La-doped components

Influence of Ag Doping on Thermoelectric Properties of BiCuSeO

Enhanced Thermoelectric and Mechanical Properties of BaO-Doped BiCuSeO δ Ceramics

High Thermoelectric Performance of Bi 1− X K X CuSeO Prepared by Combustion Synthesis

Electrical and Thermal Transport Behavior in Zn-Doped BiCuSeO Oxyselenides

Effect of NaF Doping on the Microstructure and Thermoelectric Performance of BiCuSeO Ceramics

Enhanced Thermoelectric Properties of Cu2−δSe Nanopowder Dispersed Bi2Ba2Co2Oy Ceramics

Synergistically optimized electron and phonon transport of p-type BiCuSeO oxyselenides via Pb dopant and Te composite

Study on the Targeted Improvement Mechanism of the Carrier Concentration and Mobility of BiCuSeO Ceramics

Complex Electronic Structure and Compositing Effect in High Performance Thermoelectric BiCuSeO.

Enhanced Thermoelectric Performance of BiCuSeO Composites with Nanoinclusion of Copper Selenides

Enhancement of thermoelectric performance of Cu 1.98 Se by Pb doping

Enhancement of low-temperature thermoelectric performance via Pb doping in Cu3SbSe4