Abstract:The growth via chemical vapor deposition of decoupled graphene on crystalline Cu(111) films deposited on sapphire is introduced. The resulting graphene is lying atop a thin Cu2O layer and is charge neutral, low strained, and easy to transfer. Electrical transport measurements reveal excellent room temperature carrier mobilities, exceeding 105 cm2 V−1 s−1 upon encapsulation in hexagonal boron nitride, thus opening realistic pathways for high‐performance next‐generation applications. The growth of high‐quality graphene on flat and rigid templates, such as metal thin films on insulating wafers, is regarded as a key enabler for technologies based on 2D materials. In this work, the growth of decoupled graphene is introduced via non‐reducing low‐pressure chemical vapor deposition (LPCVD) on crystalline Cu(111) films deposited on sapphire. The resulting film is atomically flat, with no detectable cracks or ripples, and lies atop of a thin Cu2O layer, as confirmed by microscopy, diffraction, and spectroscopy analyses. Post‐growth treatment of the partially decoupled graphene enables full and uniform oxidation of the interface, greatly simplifying subsequent transfer processes, particularly dry‐pick up — a task that proves challenging when dealing with graphene directly synthesized on metallic Cu(111). Electrical transport measurements reveal high carrier mobility at room temperature, exceeding 104 cm2 V−1 s−1 on SiO2/Si and 105 cm2 V−1 s−1 upon encapsulation in hexagonal boron nitride (hBN). The demonstrated growth approach yields exceptional material quality, in line with micro‐mechanically exfoliated graphene flakes, and thus paves the way toward large‐scale production of pristine graphene suitable for high‐performance next‐generation applications.

Epitaxial growth of large-area single-layer graphene over Cu(111)/sapphire by atmospheric pressure CVD

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Modulating Growth of Graphene on Sapphire by Chemical Vapor Deposition

Crystallization of Copper Films on Sapphire Substrate for Large-Area Single-Crystal Graphene Growth

High Quality, Transferable Graphene Grown on Single Crystal Cu(111) Thin Films on Basal-Plane Sapphire

Cooling Growth of Millimeter-Size Single-Crystal Bilayer Graphene at Atmospheric Pressure

Epitaxial Growth of 6 In. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C Via Chemical Vapor Deposition

Wafer-scale single-crystal monolayer graphene grown on sapphire substrate

Epitaxial chemical vapour deposition growth of monolayer hexagonal boron nitride on a Cu(111)/sapphire substrate

Preparation and multilayer transfer of high-quality monocrystalline graphene grown on centimeter-Cu (111) substrate

Surface crystallographic structure insensitive growth of oriented graphene domains on Cu substrates

Argon Assisted Growth of Epitaxial Graphene on Cu(111)

Edge-Epitaxial Growth of Graphene on Cu with a Hydrogen-Free Approach

A Systematic Study of Atmospheric Pressure Chemical Vapor Deposition Growth of Large-Area Monolayer Graphene.

Synthesis of High-Quality Monolayer and Bilayer Graphene on Copper Using Chemical Vapor Deposition

Chemical Vapor Deposition Synthesis of Graphene over Sapphire Substrates

Decoupled High‐Mobility Graphene on Cu(111)/Sapphire via Chemical Vapor Deposition

Direct Growth of GaN on Sapphire with Non-Catalytic CVD Graphene Layers at High Temperature

Rapid and catalyst-free CVD growth of graphene on hBN

Oxide-assisted Growth of Scalable Single-Crystalline Graphene with Seamlessly Stitched Millimeter-Sized Domains on Commercial Copper Foils.