Effect of hydrogen on the growth of MoS2 thin layers by thermal decomposition method

Fei Qi,Pingjian Li,Yuanfu Chen,Binjie Zheng,Xingzhao Liu,Feifei Lan,Zhanping Lai,Yongkuan Xu,Jingbo Liu,Jinhao Zhou,Jiarui He,Wanli Zhang
DOI: https://doi.org/10.1016/j.vacuum.2015.05.023
IF: 4
2015-01-01
Vacuum
Abstract:Large-area MoS2 thin layers have been synthesized onto the SiO2/Si substrate by the thermolysis of (NH4)2MoS4 film. The structure and growth mechanism of MoS2 thin layers have been investigated. The results reveal that MoO3 can be easily formed during the growth process of MoS2 film, which will dramatically degrade the quality of MoS2 film. Further studies show that with increasing hydrogen fluxes, the content of MoO3 will decrease, and when the hydrogen flux reaches 100 sccm, pure MoS2 film can be obtained. It means that hydrogen plays a critical factor for synthesis of high-quality MoS2 thin layers without unexpected Mo oxidation. This work is beneficial for not only the fundamental understanding of growth mechanism, but also the potential applications of MoS2 film in electronics.
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