Abstract:In this work, we prepared epitaxial InN on (0001) sapphire with an AlN or GaN buffer layer by molecular beam epitaxy (MBE). A series of samples were grown with different thickness under the optimized growth conditions. Films were characterized by x-ray diffraction (XRD), reflective high-energy electron diffraction (RHEED), atomic-force microscopy (AFM), transmission electron microscopy (TEM) and Hall measurements. By extrapolating the fitted curve of sheet carrier density vs. film thickness to zero film thickness, a strong residual sheet charge was derived, which may be located at the interface between the buffer layer and the InN film, or at the near-surface. It was found that for InN film on AlN buffer, the residual sheet charge is about 4.3×1013 cm−2, while for InN films on GaN buffer, the residual sheet charge is about 2.5×1013 cm−2. At present, we tentatively believe that the residual charge is surface charge accumulation similar to what is observed at the InAs surface. InN samples with Hall mobility beyond 1300 cm2/Vs and carrier concentration below 2×1018 cm−3 were routinely achieved in this study. The first study on InN-based FET structures was performed. Amorphous AlN was used as the barrier material, which was prepared by migration enhanced epitaxy (MEE) at low growth temperature. It was found that the surface morphology is improved after an AlN barrier layer is added to InN. Hg was used as a back-to-back Schottky metallization. Very low leakage current and weak rectifying behavior were observed.

Electronic and Structural Characterization of InN Heterostructures Grown on Β-Ligao2 (001) Substrates

Structural Properties of InN on PbTiO 3 (111) Surfaces

Epitaxial growth of high quality nonpolar InN films on LiGaO 2 substrates

Epitaxial Growth of High Quality Nonpolar InN Films on LiGaO2 Substrates

InN doped with Zn: Bulk and surface investigation from first principles

Theoretical study of InN growth on Mn-stabilized zirconia (111) substrates

Study of InN/GaN interfaces using molecular dynamics

InN growth on BaTiO3 (111) substrates: A first-principles study

Investigation of Structural and Optical Anisotropy of M-Plane InN Films Grown on Γ-Lialo2(1 0 0) by Metal Organic Chemical Vapour Deposition

Study of Interface Properties of InN and InN-Based Heterostructures by Molecular Beam Epitaxy

Atomic Structure for Mg on Inn(0001) Surface

Theoretical Study of the Initial Stage of Inn Growth on Cubic Zirconia (111) Substrates

High-Precision Determination of Lattice Constants and Structural Characterization of Inn Thin Films

Theoretical Study of the Stabilization Mechanisms of the Different Stable Oxygen Incorporated (101¯) Surface of III-nitrides

Influence of GaN Buffer Layer for InN Growth

On the Crystalline Structure, Stoichiometry and Band Gap of Inn Thin Films

First-principles study of Sr adsorption on InN (0001)

Nonpolar Growth And Characterization Of Inn Overlayers On Vertically Oriented Gan Nanorods

Transmission Electron Microscopy Study of Epitaxial InN Thin Films Grown on C -Plane Sapphire

Electronic band structures and transport properties of wurtzite indium nitride grown by metalorganic vapor phase epitaxy

Characteristics of InN Epilayers Grown with H-2-assistance