Abstract:In this paper, the electronic and optical properties of Cr-doped monolayer MoS 2 under uniaxial tensile strain are investigated by first-principle calculations. It is shown that uniaxial tensile strain can significantly change the electronic and optical properties of Cr-doped monolayer MoS 2 , and the bandgap value of the intrinsic MoS 2 system gradually decreases with the increase of tensile strain, while the bandgap value of the Cr-doped MoS 2 system is relatively stable. However, when the stretching reaches a certain degree, both the intrinsic and doped systems become metallic. From the analysis of the density of states, it is found that new electronic states and energy levels appear in the intrinsic MoS 2 system and all Cr-doped monolayer MoS 2 systems with the increase of the tensile strain, but the changes in the density of states diagrams of the Cr-doped monolayer MoS 2 system are relatively small, which is mainly attributed to the effect of the Cr-doped atoms. The analysis of optical properties displays that the stretched doped system differs from the intrinsic MoS 2 system in terms of dielectric function, absorption and reflection, energy loss function, and refractive index. Our results suggest that uniaxial tensile strain can be used as an effective means to modulate the electronic structure and optical properties of Cr-doped monolayer MoS 2 . These findings provide a theoretical basis for understanding the optoelectronic properties of MoS 2 and its doped systems as well as their applications in optoelectronic devices.

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