Abstract:P-type doping of ultrawide-bandgap semiconductors, which are the key materials for fabrication of next-generation high-performance optoelectronic and electronic devices, is extremely difficult to achieve. The lack of p-type Ga2O3 has become a great obstacle to fabricate a full Ga2O3-based p-n homojunction for high-performance device applications. We demonstrate that N-doped beta-Ga2O3 achieved by a phase transition from GaN to beta-Ga2O3 possesses low formation energy and transition level epsilon(0/-), thereby with good N dopant solubility and low activation energy of N acceptors (0.355 eV). The delocalization effect, enhancement of valence band dispersion, and thus the decrease of the hole effective mass are predicted for N-doped beta-Ga2O3 due to the hybridization of O 2p with N 2p and Ga 4s orbitals. Activated hole concentrations of 6.1 x 10(15) and 2.1 x 10(16) cm(-3) at a valence band maximum are predicted for beta-Ga2O3:N-O(III) obtained by the nonspin and spin-polarized calculations, respectively. The hole mobility is 1.3 cm(2) V-1 s(-1) for undoped beta-Ga2O3 and remarkably increases to 8.8 and 5.5 cm(2) V-1 s(-1) for beta-Ga2O3:N-O(III) obtained by the non-spin and spin-polarized calculations, respectively. The origins for the unusual increase of hole mobility are attributed to the decrease of the hole effective mass, and reduction in acoustic deformation potential scattering and optical phonon scattering due to the weakening of electron-phonon coupling by N-induced phonon stiffening for beta-Ga2O3:N-O(III). The p-type conductivity of N-doped beta-Ga2O3 is demonstrated theoretically and also experimentally with a Hall hole concentration of 3.19 x 10(15) cm(-3) and a Hall hole mobility of 23.1 cm(2) V-1 s(-1) for N-doped beta-Ga2O3 films, and the p-type conductivity mechanisms are clarified. These studies will open a new horizon for other p-type wide bandgap oxide semiconductors.

Ultrahigh-Density Beta-Ga2o3/N-Doped Beta-Ga2o3 Schottky and P-N Nanowire Junctions: Synthesis and Electrical Transport Properties

Current-voltage Characteristics and Parameter Retrieval of Semiconducting Nanowires

Conversion between hexagonal GaN and beta-Ga(2)O(3) nanowires and their electrical transport properties

Theoretical analysis of electrical properties of gaassubstrate-nanowire P-N junction

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

Controllable P-N Switching Behaviors of Gaas Nanowires Via an Interface Effect

Analysis of Nanowire pn-Junction with Combined Current–Voltage, Electron-Beam-Induced Current, Cathodoluminescence, and Electron Holography Characterization

Catalytic Growth and Characterization of Single Crystalline Zn Doped P-Type Β-Ga2o3 Nanowires

Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped -Ga<sub>2</sub>O<sub>3</sub> with high hole mobility

Preparation and Electrical Properties of Ultrafine Ga<sub>2</sub>O<sub>3</sub>Nanowires

Controlled Growth of Heterostructured Ga/GaAs Nanowires with Sharp Schottky Barrier

Tuning The Electrical Transport Properties Of N-Type Cds Nanowires Via Ga Doping And Their Nano-Optoelectronic Applications

Demonstration of Schottky Barrier NMOS Transistors with Erbium Silicided Source/Drain and Silicon Nanowire Channel

Selected-Area Fabrication of a Single-Walled Carbon Nanotube Schottky Junction with Tunable Gate Rectification

Charge Transport in InAs Nanowire Josephson Junctions

Monolithic lateral p-n junction GaAs nanowire diodes via selective lateral epitaxy

Nanostructured p-p(v) junctions obtained by G-doping

Improved Vertical beta-Ga2O3 Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension

Improved Vertical Β-Ga2o3 Schottky Barrier Diodes with Conductivity-Modulated P-Nio Junction Termination Extension

Modulation of Luminescence Emission Spectra of N-doped SS-Ga2o3 Nanowires by Thermal Evaporation

N-doped Β-Ga2o3/si-doped Β-Ga2o3 Linearly-Graded P-N Junction by a One-Step Integrated Approach