Abstract:Different contact materials and optimization of techniques of their depositions expand the possibilities to obtain high performance room temperature CdTe-based X/γ-ray detectors. The heterostructures with ohmic (MoOx) and Schottky (MoOx, TiOx, TiN, and In) contacts, created by DC reactive magnetron sputtering and vacuum thermal evaporation, as well as In/CdTe/Au diodes with a p-n junction, formed by laser-induced doping, have been developed and investigated. Depending on the surface pre-treatment of semi-insulating p-CdTe crystals, the deposition of a MoOx film formed either ohmic or Schottky contacts. Based on the calculations and I-V characteristics of the Mo-MoOx/p-CdTe/MoOx-Mo, In/p-CdTe/MoOx-Mo, Ti-TiOx/p-CdTe/MoOx-Mo, and Ti-TiN/p-CdTe/MoOx-Mo Schottky-diode detectors, the current transport processes were described in the models of the carrier generation-recombination within the space-charge region (SCR) at low bias, and space-charge limited current incorporating the Poole-Frenkel effect at higher voltages, respectively. The energies of generation-recombination centers, density of trapping centers, and effective carrier lifetimes were determined. Nanosecond laser irradiation of the In electrode, pre-deposited on the p-CdTe crystals, resulted in extending the voltage range, corresponding to the carrier generation-recombination in the SCR in the I-V characteristics of the In/CdTe/Au diodes. Such In/CdTe/Au p-n junction diode detectors demonstrated high energy resolutions (7%@59.5 keV, 4%@122 keV, and 1.6%@662 keV).

Investigation of the Spectral Improvement of a Capacitive Frisch-grid CdZnTe Detector by Using Infrared Stimulation

Investigation of the Influence of Infrared Illumination on the Pulse Shapes of Output Signals of CdZnTe Detectors

Study on the Mechanism of Using IR Illumination to Improve the Carrier Transport Performance of CdZnTe Detector

Performance optimization of CZT thick films by CdTe buffer layers for solar-blind ultraviolet photoelectric detectors

Laser-interfered studies in HgCdTe infrared focal plane array detector by high-repetition-rate mid-infrared supercontinuum fiber laser

Infrared transmission spectra of Cd 1−x Zn x Te (x = 0.04) crystals

Improved performance of HgCdTe infrared detector focal plane arrays by modulating light field based on photonic crystal structure

Reflective Grating-Coupled Structure Improves the Detection Efficiency of THz Array Detectors

Improved Responsivity and Detectivity of LPE HgCdTe Short-Wavelength Infrared Photodetector by Tuning the Composition Gradient

Plasmonic Enhanced Performance of an Infrared Detector Based on Carbon Nanotube Films.

CdTe X/γ-ray Detectors with Different Contact Materials

Impact of selenium addition to the cadmium-zinc-telluride matrix for producing high energy resolution X-and gamma-ray detectors

Research on the Technological Progress of CZT Array Detectors

Design of Capacitive-Read Infrared FPA

High-performance near-infrared photodetector based on quasi one-dimensional layered (TaSe 4 ) 2 I

Synergistic Effects of Extrinsic Photoconduction and Photogating in a Short-Wavelength ZrS3 Infrared Photodetector.

Design and calculation of photoelectric properties of resonance enhanced InAs/GaSb type-II superlattices photodetectors with diffraction rings structure

Investigating the influence of CdZnTe and HgCdTe material quality on detector image performance

Characterization of the Uniformity of High-Flux CdZnTe Material

Nonlocal Response in Infrared Detector with Semiconducting Carbon Nanotubes and Graphdiyne.

Enhanced Performance of Wideband Room Temperature Photodetector Based on Cd3As2 Thin Film/Pentacene Heterojunction