Abstract:Introduction It has been increasingly difficult to further improve the performance of Si MOSFETs by conventional device scaling down . Therefore, the employment of high mobility channel materials has been considered as one of the most promising solutions to enhance the CMOS devices performance . Ge has been attracting a lot of interest as the channel material for MOSFETs, due to its much higher mobility for both hole and electron compared with those in Si . Although high mobility Ge MOSFETs has been realized by using the thick GeO2/Ge gate stacks , EOT scaling using high-k dielectrics is mandatory to realize high performance Ge MOSFETs. However, it has been found that the mobility is severely decreased in thin EOT high-k/Ge MOSFETs, attributable to the degradation of Ge MOS interface qualities. Thus, the formation of advanced Ge gate stacks with both ultrathin EOT and good interface qualities (low Dit) is the critical issue to obtain superior Ge MOSFETs. In this research, we demonstrate a plasma post oxidation (PPO) technique to oxidize the Ge surface by using oxygen plasma exposure to ALD high-k/Ge structures. Here the high-k layer serves as the oxygen barrier to prevent the growth of unnecessarily thick GeOx interfacial layer (IL), as well as the protection layer to eliminate any damage to the ultrathin GeOx/Ge interface after its formation. As a result, the high-k/GeOx/Ge gate stacks have been formed with sub-nm EOT and low Dit simultaneously. The high mobility Ge MOSFETs have also been realized by using these gate stack structures.

Investigation on the Dominant Key to Achieve Superior Ge Surface Passivation by GeOx Based on the Ozone Oxidation

Impact of GeOx Interfacial Layer Thickness on Al2O3/Ge MOS Interface Properties

Atomic Layer-By-Layer Oxidation Of Ge (100) And (111) Surfaces By Plasma Post Oxidation Of Al2o3/Ge Structures

Aggressive EOT Scaling of Ge Pmosfets with HfO 2 /alo X /geo X Gate-Stacks Fabricated by Ozone Postoxidation

Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties

Evidence of Layer-by-Layer Oxidation of Ge Surfaces by Plasma Oxidation Through Al2O3

Reliability Improvement of Ge Pmosfets with Al2O3 Dielectric by Ozone Post Annealing

Impact of plasma post oxidation temperature on interface trap density and roughness at GeOx/Ge interfaces

High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation

Ge Surface Passivation by GeO 2 Fabricated by N 2 O Plasma Oxidation

Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.

Effective Interface Passivation of A Ge/Hfo2 Gate Stack Using Ozone Pre-Gate Treatment and Ozone Ambient Annealing

Al2o3/Geox/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Postoxidation

1-Nm-thick EOT High Mobility Ge N- and P-Mosfets with Ultrathin GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Suppression of Ald-Induced Degradation of Ge Mos Interface Properties by Low Power Plasma Nitridation of Geo2

Impact of Channel Orientation on Electrical Properties of Ge P- and N-Mosfets with 1-Nm Eot Al2o3/Geox/Ge Gate-Stacks Fabricated by Plasma Postoxidation

Investigation of Different Interface Passivation on Germanium: RTO-GeO2 and Nitrogen-Plasma-passivation

Impact of Back Interface Passivation on Electrical Properties of Ultrathin-Body Germanium-On-Insulator (geoi) Mosfets

Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces